Jun-14-2004
1
BCR166.../SEMB13
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
= 4.7k
, R
2
= 47k
)
BCR166/F/L3
BCR166T/W
SEMB13
EHA07183
3
2
1
C
E
B
R
1
R
2
EHA07173
6
5
4
3
2
1
C1
B2
E2
C2
B1
E1
1
R
R
2
R
1
R
2
TR1
TR2
Type
Marking
Pin Configuration
Package
BCR166
BCR166F
BCR166L3
BCR166T
BCR166W
SEMB13
WTs
WTs
WT
WTs
WTs
WB
1=B
1=B
1=B
1=B
1=B
1=E1
2=E
2=E
2=E
2=E
2=E
2=B1
3=C
3=C
3=C
3=C
3=C
3=C2
-
-
-
-
-
4=E2
-
-
-
-
-
5=B2
-
-
-
-
-
6=C1
SOT23
TSFP-3
TSLP-3-4
SC75
SOT323
SOT666
Jun-14-2004
2
BCR166.../SEMB13
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
50
V
Collector-base voltage
V
CBO
50
Emitter-base voltage
V
EBO
5
Input on voltage
V
i(on)
15
Collector current
I
C
100
mA
Total power dissipation-
BCR166, T
S
102C
BCR166F, T
S
128C
BCR166L3, T
S
135C
BCR166T, T
S
109C
BCR166W, T
S
124C
SEMB13, T
S
75C
P
tot
200
250
250
250
250
250
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BCR166
BCR166F
BCR166L3
BCR166T
BCR166W
SEMB13
R
thJS
240
90
60
165
105
300
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
Jun-14-2004
3
BCR166.../SEMB13
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 100 A, I
B
= 0
V
(BR)CEO
50
-
-
V
Collector-base breakdown voltage
I
C
= 10 A, I
E
= 0
V
(BR)CBO
50
-
-
Collector-base cutoff current
V
CB
= 40 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 5 V, I
C
= 0
I
EBO
-
-
155
A
DC current gain
1)
I
C
= 5 mA, V
CE
= 5 V
h
FE
70
-
-
-
Collector-emitter saturation voltage
1)
I
C
= 10 mA, I
B
= 0.5 mA
V
CEsat
-
-
0.3
V
Input off voltage
I
C
= 100 A, V
CE
= 5 V
V
i(off)
0.4
-
0.8
Input on voltage
I
C
= 2 mA, V
CE
= 0.3 V
V
i(on)
0.5
-
1.4
Input resistor
R
1
3.2
4.7
6.2
k
Resistor ratio
R
1
/R
2
0.09
0.1
0.11
-
AC Characteristics
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 100 MHz
f
T
-
160
-
MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
3
-
pF
1Pulse test: t < 300s; D < 2%
Jun-14-2004
4
BCR166.../SEMB13
DC current gain h
FE
=
(I
C
)
V
CE
= 5 V (common emitter configuration)
10
-1
10
0
10
1
10
2
mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
Collector-emitter saturation voltage
V
CEsat
=
(I
C
), h
FE
= 20
0
0.2
0.4
0.6
V
1
V
CEsat
0
10
1
10
2
10
mA
I
C
Input on Voltage V
i
(on)
=
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
10
0
10
1
10
2
V
V
i(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage V
i(off)
=
(I
C
)
V
CE
= 5V (common emitter configuration)
0
0.2
0.4
0.6
V
1
V
i(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
Jun-14-2004
5
BCR166.../SEMB13
Total power dissipation P
tot
=
(T
S
)
BCR166
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
Total power dissipation P
tot
=
(T
S
)
BCR166F
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
Total power dissipation P
tot
=
(T
S
)
BCR166L3
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
Total power dissipation P
tot
=
(T
S
)
BCR166T
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
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