BCR169S
Dec-13-2001
1
PNP Silicon Digital Transistor Array
Switching circuit, inverter, interface circuit,
driver circuit
Two ( galvanic) internal isolated Transistors
with good matching in one package
Built in bias resistor (R
1
=4.7k
)
VPS05604
6
3
1
5
4
2
EHA07266
6
5
4
3
2
1
C1
B2
E2
C2
B1
E1
TR1
TR2
R
1
R
1
Type
Marking
Pin Configuration
Package
BCR169S
WSs
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
50
V
V
CEO
50
Collector-base voltage
V
CBO
5
V
EBO
Emitter-base voltage
Input on Voltage
V
i(on)
15
100
mA
DC collector current
I
C
mW
P
tot
250
Total power dissipation
,
T
S
= 115 C
Junction temperature
150
C
T
j
-65 ... 150
Storage temperature
T
stg
Thermal Resistance
Junction - soldering point
1)
R
thJS
140
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCR169S
Dec-13-2001
2
Electrical Characteristics
at T
A
=25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 100 A,
I
B
= 0
V
(BR)CEO
50
-
-
V
Collector-base breakdown voltage
I
C
= 10 A,
I
E
= 0
V
(BR)CBO
50
-
-
Emitter-base breakdown voltage
I
E
= 10 A,
I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
I
CBO
-
-
100
nA
DC current gain 1)
I
C
= 5 mA,
V
CE
= 5 V
h
FE
120
-
630
-
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
V
CEsat
-
-
0.3
V
Input off voltage
I
C
= 100 A,
V
CE
= 5 V
V
i(off)
0.4
-
0.8
Input on Voltage
I
C
= 2 mA,
V
CE
= 0.3 V
V
i(on)
0.5
-
1.1
Input resistor
R
1
3.2
4.7
6.2
k
AC Characteristics
-
150
-
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
f
T
MHz
-
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
3
-
pF
C
cb
1) Pulse test: t < 300
s; D < 2%
BCR169S
Dec-13-2001
3
Collector-Emitter Saturation Voltage
V
CEsat
= f (I
C
), h
FE
= 20
0.00
0.10
0.20
0.30
0.40
V
0.55
V
CEsat
-1
10
0
10
1
10
2
10
mA
I
C
DC Current Gain
h
FE
= f (I
C
)
V
CE
= 5V (common emitter configuration)
10
-1
10
0
10
1
10
2
mA
I
C
0
10
1
10
2
10
3
10
-
h
FE
Input on Voltage
V
i(on)
= f (I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
10
0
10
1
10
2
V
V
i(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage
V
i(off)
= f (I
C
)
V
CE
= 5V (common emitter configuration)
0
1
2
3
V
5
V
i(off)
-3
10
-2
10
-1
10
0
10
1
10
2
10
mA
I
C
PDF 
ZIP