BCV61
1
Jul-10-2001
NPN Silicon Double Transistor
To be used as a current mirror
Good thermal coupling and V
BE
matching
High current gain
Low collector-emitter saturation voltage
VPS05178
2
1
3
4
EHA00012
C2 (1)
Tr.2
Tr.1
C1 (2)
E1 (3)
E2 (4)
Type
Marking
Pin Configuration
Package
BCV61A
BCV61B
BCV61C
1Js
1Ks
1Ls
1 = C2
1 = C2
1 = C2
2 = C1
2 = C1
2 = C1
3 = E1
3 = E1
3 = E1
4 = E2
4 = E2
4 = E2
SOT143
SOT143
SOT143
Maximum Ratings
Parameter
Value
Symbol
Unit
V
CEO
30
V
Collector-emitter voltage
(transistor T1)
V
CBO
30
Collector-base voltage (open emitter)
(transistor T1)
6
V
EBS
Emitter-base voltage
DC collector current
mA
100
I
C
Peak collector current
I
CM
200
Base peak current (transistor T1)
I
BM
200
Total power dissipation
, T
S
= 99 C
300
mW
P
tot
Junction temperature
C
150
T
j
-65 ... 150
T
stg
Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS
170
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCV61
2
Jul-10-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics of T1
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
V
(BR)CEO
-
30
V
-
Collector-base breakdown voltage
I
C
= 10 A, I
B
= 0
V
(BR)CBO
-
-
30
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
6
-
-
Collector cutoff current
V
CB
= 30 V, I
E
= 0
I
CBO
-
-
nA
15
Collector cutoff current
V
CB
= 30 V, I
E
= 0 , T
A
= 150 C
I
CBO
-
-
A
5
DC current gain 1)
I
C
= 0.1 mA, V
CE
= 5 V
h
FE
-
-
100
-
DC current gain 1)
I
C
= 2 mA, V
CE
= 5 V
h
FE
110
200
420
180
290
520
220
450
800
Collector-emitter saturation voltage1)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CEsat
-
-
90
200
250
600
mV
-
-
Base-emitter saturation voltage 1)
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
-
-
700
900
V
BEsat
580
-
Base-emitter voltage 1)
I
C
= 2 mA, V
CE
= 5 V
I
C
= 10 mA, V
CE
= 5 V
660
-
700
770
V
BE(ON)
BCV61A
BCV61B
BCV61C
1) Pulse test: t
300
s, D = 2%
BCV61
3
Jul-10-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
min.
typ.
Characteristics
V
BES
0.4
-
Base-emitter forward voltage
I
E
= 10 A
I
E
= 250 mA
-
1.8
-
-
V
I
C1
/ I
C2
-
0.7
0.7
-
1.3
1.3
Matching of transistor T1 and transistor T2
at I
E2
= 0.5mA and V
CE1
= 5V
T
A
= 25 C
T
A
= 150 C
-
-
-
-
I
E2
-
mA
5
Thermal coupling of transistor T1 and
transistor T2
1)
T1: V
CE
= 5V
Maximum current of thermal stability of I
C1
-
AC characteristics for transistor T1
Transition frequency
I
C
= 10 mA, V
CE
= 5 V, f = 100 MHz
f
T
-
250
-
MHz
C
cb
3
-
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
pF
-
C
eb
8
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
-
-
Noise figure
I
C
= 200 A, V
CE
= 5 V, R
S
= 2 k
,
f
= 1 kHz,
f
= 200 Hz
dB
F
-
2
-
h
11e
-
4.5
Short-circuit input impedance
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
k
-
Open-circuit reverse voltage transf.ratio
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
10
-4
h
12e
-
2
-
Short-circuit forward current transf.ratio
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
21e
100
-
900
-
Open-circuit output admittance
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
h
22e
-
30
-
S
1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm
BCV61
4
Jul-10-2001
Test circuit for current matching
EHN00001
T1
T2
...
A
2
1
4
3
V
CE1
CO
V
CO
V
C1
E2
= constant
Note: Voltage drop at contacts:
V
CO
< 2/3
V
T
= 16mV
Characteristic for determination of V
CE1
at specified R
E
range with
I
E2
as parameter under condition of I
C1
/I
E2
= 1.3
EHN00002
T1
T2
...
A
2
1
4
3
V
CE1
C1
E2
= constant
R
E
R
E
Note: BCV61 with emitter resistors
BCV61
5
Jul-10-2001
Permissible pulse load
P
totmax
/
P
totDC
=
f (t
p
)
10
EHP00942
BCV 61
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
D
T
t
p
T
tot max
tot
P
DC
P
p
t
Total power dissipation
P
tot
=
f(T
S
)
0
15
30
45
60
75
90 105 120
C
150
T
S
0
50
100
150
200
250
mW
350
P
tot
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