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Электронный компонент: BCW61C

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BCW61, BCX71
1
Jul-10-2001
PNP Silicon AF Transistor
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW60, BCX70 (NPN)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BCW 61A
BCW 61B
BCW 61C
BCW 61D
BCW 61FF
BCW 61FN
BCX 71G
BCX 71H
BCX 71J
BCX 71K
BAs
BBs
BCs
BDs
BFs
BNs
BGs
BHs
BJs
BKs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
BCW61, BCX71
2
Jul-10-2001
Maximum Ratings
Parameter
Symbol
BCW61 BCW61FF BCX71 Unit
Collector-emitter voltage
V
CEO
32
32
45
V
Collector-base voltage
V
CBO
32
32
45
Emitter-base voltage
V
EBO
5
5
5
DC collector current
I
C
mA
100
Peak collector current
200
mA
I
CM
Peak base current
200
I
BM
Total power dissipation
, T
S
= 71 C
P
tot
mW
330
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
240
K/W
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
BCW61/61FF
BCX71
V
(BR)CEO
32
45
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 A, I
B
= 0
BCW61/61FF
BCX71
V
(BR)CBO
32
45
-
-
-
-
Emitter-base breakdown voltage
I
E
= 1 A, I
C
= 0
V
(BR)EBO
5
-
-
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
BCW61, BCX71
3
Jul-10-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Collector cutoff current
V
CB
= 32 V, I
E
= 0
V
CB
= 45 V, I
E
= 0
BCW61/61FF
BCX71
I
CBO
-
-
-
-
20
20
nA
Collector cutoff current
V
CB
= 32 V, I
E
= 0 , T
A
= 150 C
V
CB
= 45 V, I
E
= 0 , T
A
= 150 C
BCW61/61FF
BCX71
I
CBO
-
-
-
-
20
20
A
Emitter cutoff current
V
EB
= 4 V, I
C
= 0
I
EBO
-
-
20
nA
DC current gain 1)
I
C
= 10 A, V
CE
= 5 V
h
FE
-grp. A/G
h
FE
-grp. B/H
h
FE
-grp. C/J/FF
h
FE
-grp. D/K/FN
h
FE
20
30
40
100
140
200
300
460
-
-
-
-
-
DC current gain 1)
I
C
= 2 mA, V
CE
= 5 V
h
FE
-grp. A/G
h
FE
-grp. B/H
h
FE
-grp. C/J/FF
h
FE
-grp. D/K/FN
h
FE
120
180
250
380
170
250
350
500
220
310
460
630
DC current gain 1)
I
C
= 50 mA, V
CE
= 1 V
h
FE
-grp. A/G
h
FE
-grp. B/H
h
FE
-grp. C/J/FF
h
FE
-grp. D/K/FN
h
FE
60
80
100
110
-
-
-
-
-
-
-
-
1) Pulse test: t
=
300
s, D = 2%
BCW61, BCX71
4
Jul-10-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Collector-emitter saturation voltage1)
I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
V
CEsat
-
-
0.12
0.2
0.25
0.55
V
Base-emitter saturation voltage 1)
I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
V
BEsat
-
-
0.7
0.83
0.85
1.05
Base-emitter voltage 1)
I
C
= 10 A, V
CE
= 5 V
I
C
= 2 mA, V
CE
= 5 V
I
C
= 50 mA, V
CE
= 1 V
V
BE(ON)
-
0.55
-
0.52
0.65
0.78
-
0.75
-
AC Characteristics
Transition frequency
I
C
= 20 mA, V
CE
= 5 V, f = 100 MHz
f
T
-
250
-
MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
3
-
pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
8
-
Short-circuit input impedance
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
h
FE
-grp.
A/G
B/H
C/J/FF
D/K/FN
h
11e
-
-
-
-
2.7
3.6
4.5
7.5
-
-
-
-
k
Open-circuit reverse voltage transf.ratio
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
h
FE
-grp.
A/G
B/H
C/J/FF
D/K/FN
h
12e
-
-
-
-
1.5
2
2
3
-
-
-
-
10
-4
1) Pulse test: t
=
300
s, D = 2%
BCW61, BCX71
5
Jul-10-2001
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Short-circuit forward current transf.ratio
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
h
FE
-grp.
A/G
B/H
C/J/FF
D/K/FN
h
21e
-
-
-
-
200
260
330
520
-
-
-
-
-
Open-circuit output admittance
I
C
= 2 mA, V
CE
= 5 V, f = 1 kHz
h
FE
-grp.
A/G
B/H
C/J/FF
D/K/FN
h
22e
-
-
-
-
18
24
30
50
-
-
-
-
S
Noise figure
I
C
= 200 A, V
CE
= 5 V, R
S
= 1 k
,
f
= 1 kHz,
f
= 200 Hz
h
FE
-grp.
A/K
FF/FN
F

-
-

2
1

-
2
dB
Equivalent noise voltage
I
C
= 200 A, V
CE
= 5 V, R
S
= 2 k
,
f = 10 ... 50 Hz
h
FE
-grp.
FF/FN
V
n
-
-
0.11
V
BCW61, BCX71
6
Jul-10-2001
Collector-base capacitance
C
CB
=
f (V
CBO
)
Emitter-base capacitance
C
EB
=
f (V
EBO
)
10
EHP00344
BCW 61/BCX 71
-1
1
10
V
10
0
6
12
pF
0
2
4
8
10
CBO
V
V
EBO
EBO
C
C
CBO
EBO
C
C
CBO
)
(
)
(
Total power dissipation
P
tot
=
f(T
S
)
0
15
30
45
60
75
90 105 120
C
150
T
S
0
30
60
90
120
150
180
210
240
270
300
mW
360
P
tot
Permissible pulse load
P
totmax
/
P
totDC
=
f (t
p
)
10
EHP00345
BCW 61/BCX 71
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
D
T
t
p
T
tot max
tot
P
DC
P
p
t
Transition frequency
f
T
=
f (I
C
)
V
CE
= 5V
10
EHP00347
BCW 61/BCX 71
0
3
10
mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
f
MHz
5
5
BCW61, BCX71
7
Jul-10-2001
Collector-emitter saturation voltage
I
C
=
f (V
CEsat
),
h
FE
= 40
0
10
EHP00349
BCW 61/BCX 71
CEsat
V
V
0.5
-1
10
0
10
1
2
10
5
5
C
mA
0.1
0.2
0.3
0.4
C
100
25 C
-50 C
Base-emitter saturation voltage
I
C
=
f (V
BEsat
),
h
FE
= 40
0
10
EHP00348
BCW 61/BCX 71
BE sat
V
0.6
V
1.2
-1
10
0
10
1
2
10
5
5
C
mA
0.2
0.4
0.8
C
25
100 C
-50 C
DC current gain
h
FE
=
f (I
C
)
V
CE
= 5V
10
EHP00351
BCW 61/BCX 71
-2
2
10
mA
0
10
3
10
5
5
10
-1
10
0
10
1
C
FE
h
1
10
2
10
C
100
5
25 C
-50 C
Collector current
I
C
=
f (V
BE
)
V
CE
= 5V
0
10
EHP00350
BCW 61/BCX 71
BE
V
0.5
V
1.0
-2
10
-1
10
0
2
10
5
5
C
mA
5
1
10
C
100
25
-50
C
C
BCW61, BCX71
8
Jul-10-2001
h parameter
h
e
=
f (I
C
) normalized
V
CE
= 5V
10
EHP00353
BCW 61/BCX 71
-1
1
10
mA
-1
10
2
10
5
5
10
0
10
0
C
e
h
1
10
5
11e
h
12e
h
21e
h
22e
h
V
CE
= 5 V
Collector cutoff current
I
CBO
=
f (T
A
)
V
CB
=
V
CEmax
0
10
EHP00352
BCW 61/BCX 71
A
T
150
-1
4
10
CBO
nA
50
100
0
10
1
10
3
10
C
typ
max
10
2
Noise figure
F = f (V
CE
)
I
C
= 0.2mA,
R
S
= 2k
,
f = 1kHz
10
EHP00355
BCW 61/BCX 71
-1
2
10
V
5
10
0
10
1
F
10
15
20
dB
0
CE
V
h parameter
h
e
=
f (V
CE
) normalized
I
C
= 2mA
0
0
EHP00354
BCW 61/BCX 71
CE
V
30
10
20
0.5
1.0
1.5
2.0
h
e
V
C
= 2 mA
11
h
h
12
22
h
BCW61, BCX71
9
Jul-10-2001
Noise figure
F = f (I
C
)
V
CE
= 5V,
f = 120Hz
10
EHP00357
BCW 61/BCX 71
-3
1
10
mA
5
10
-2
10
-1
F
0
10
10
15
20
dB
0
C
S
R = 1 M
100 k
10 k
1 k
500
Noise figure
F = f (f)
I
C
= 0.2mA,
V
CE
= 5V,
R
S
= 2k
10
EHP00356
BCW 61/BCX 71
-2
2
10
kHz
5
10
-1
10
0
F
1
10
10
15
20
dB
f
0
Noise figure
F = f (I
C
)
V
CE
= 5V,
f = 1kHz
10
EHP00358
BCW 61/BCX 71
-3
1
10
mA
5
10
-2
10
-1
F
0
10
10
15
20
dB
0
C
= 1 M
S
R
100 k
10 k
1k
500
Noise figure
F = f (I
C
)
V
CE
= 5V,
f = 10kHz
10
EHP00359
BCW 61/BCX 71
-3
1
10
mA
5
10
-2
10
-1
F
0
10
10
15
20
dB
0
C
= 1 M
R
S
100 k
10 k
500
1 k