BCW67, BCW68
1
Jul-10-2001
PNP Silicon AF Transistors
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW65, BCW66 (NPN)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BCW67A
BCW67B
BCW67C
BCW68F
BCW68G
BCW68H
DAs
DBs
DCs
DFs
DGs
DHs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Symbol
BCW67
BCW68
Unit
Collector-emitter voltage
V
CEO
32
45
V
Collector-base voltage
V
CBO
45
60
Emitter-base voltage
V
EBO
5
5
DC collector current
I
C
800
mA
Peak collector current
I
CM
1
A
Base current
mA
100
I
B
Peak base current
I
BM
200
Total power dissipation
, T
S
= 79 C
P
tot
330
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
215
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCW67, BCW68
2
Jul-10-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
BCW67
BCW68
V
(BR)CEO
32
45
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 A, I
B
= 0
BCW67
BCW68
V
(BR)CBO
45
60
-
-
-
-
Emitter-base breakdown voltage
I
E
= 10 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 32 V, I
E
= 0
V
CB
= 45 V, I
E
= 0
BCW67
BCW68
I
CBO
-
-
-
-
20
20
nA
Collector cutoff current
V
CB
= 32 V, I
E
= 0 , T
A
= 150 C
V
CB
= 45 V, I
E
= 0 , T
A
= 150 C
BCW67
BCW68
I
CBO
-
-
-
-
20
20
A
Emitter cutoff current
V
EB
= 4 V, I
C
= 0
I
EBO
-
-
20
nA
DC current gain 1)
I
C
= 100 A, V
CE
= 10 V
h
FE
-grp.A/F
h
FE
-grp.B/G
h
FE
-grp.C/H
h
FE
35
50
80
-
-
-
-
-
-
-
DC current gain 1)
I
C
= 10 mA, V
CE
= 1 V
h
FE
-grp.A/F
h
FE
-grp.B/G
h
FE
-grp.C/H
h
FE
75
120
180
-
-
-
-
-
-
DC current gain 1)
I
C
= 100 mA, V
CE
= 1 V
h
FE
-grp.A/F
h
FE
-grp.B/G
h
FE
-grp.C/H
h
FE
100
160
250
160
250
350
250
400
630
1) Pulse test: t
300
s, D = 2%
BCW67, BCW68
3
Jul-10-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
DC current gain 1)
I
C
= 500 mA, V
CE
= 2 V
h
FE
-grp.A/F
h
FE
-grp.B/G
h
FE
-grp.C/H
h
FE
35
60
100
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 100 mA, I
B
= 10 mA
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
-
-
-
-
0.3
0.7
V
Base-emitter saturation voltage 1)
I
C
= 100 mA, I
B
= 10 mA
I
C
= 500 mA, I
B
= 50 mA
V
BEsat
-
-
-
-
1.25
2
AC Characteristics
Transition frequency
I
C
= 50 mA, V
CE
= 5 V, f = 20 MHz
f
T
-
200
-
MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
6
-
pF
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
60
-
BCW67, BCW68
4
Jul-10-2001
Transition frequency f
T
= f (I
C
)
V
CE
= 5V
10
10
10
10
BCW 67/68
EHP00398
f
mA
MHz
0
1
2
3
5
T
3
10
10
2
1
10
5
5
5
C
Total power dissipation P
tot
= f(T
S
)
0
15
30
45
60
75
90 105 120
C
150
T
S
0
30
60
90
120
150
180
210
240
270
300
mW
360
P
tot
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00399
BCW 67/68
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
D
T
t
p
T
tot max
tot
P
DC
P
p
t
Collector cutoff current I
CBO
= f (T
A
)
V
CB
= V
CEmax
10
0
50
100
150
BCW 67/68
EHP00400
T
A
5
10
10
nA
10
CB0
5
5
5
10
10
5
4
3
2
1
0
max
typ
C
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