BCX69
1
Jul-23-2001
PNP Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCX68 (NPN)
2
1
3
VPS05162
2
Type
Marking
Pin Configuration
Package
BCX69
BCX69-10
BCX69-16
BCX69-25
CE
CF
CG
CH
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
SOT89
SOT89
SOT89
SOT89
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
20
V
Collector-base voltage
V
CBO
25
Emitter-base voltage
V
EBO
5
DC collector current
I
C
1
A
Peak collector current
I
CM
2
Base current
I
B
100
mA
Peak base current
I
BM
200
Total power dissipation
, T
S
= 130 C
P
tot
1
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
20
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCX69
2
Jul-23-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Collector-emitter breakdown voltage
I
C
= 30 mA, I
B
= 0
V
(BR)CEO
20
-
-
V
Collector-base breakdown voltage
I
C
= 10 A, I
B
= 0
V
(BR)CBO
25
-
-
Emitter-base breakdown voltage
I
E
= 1 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector cutoff current
V
CB
= 25 V, I
E
= 0
I
CBO
-
-
100
nA
Collector cutoff current
V
CB
= 25 V, I
E
= 0 , T
A
= 150 C
I
CBO
-
-
100
A
DC current gain 1)
I
C
= 5 mA, V
CE
= 10 V
h
FE
50
-
-
-
DC current gain 1)
I
C
= 500 mA, V
CE
= 1 V
BCX69
BCX69-10
BCX69-16
BCX69-25
h
FE
85
85
100
160
-
100
160
250
375
160
250
375
DC current gain 1)
I
C
= 1 A, V
CE
= 1 V
h
FE
60
-
-
Collector-emitter saturation voltage1)
I
C
= 1 A, I
B
= 100 mA
V
CEsat
-
-
0.5
V
Base-emitter voltage 1)
I
C
= 5 mA, V
CE
= 10 V
I
C
= 1 A, V
CE
= 1 V
V
BE(ON)
-
-
0.6
-
-
1
AC Characteristics
Transition frequency
I
C
= 100 mA, V
CE
= 5 V, f = 20 MHz
f
T
-
100
-
MHz
1) Pulse test: t
=
300
s, D = 2%
BCX69
3
Jul-23-2001
Transition frequency f
T
= f (I
C
)
V
CE
= 5V
10
10
10
10
BCX 69
EHP00469
f
mA
MHz
0
1
2
3
5
T
3
10
10
2
1
10
5
5
5
C
Total power dissipation P
tot
= f(T
S
)
0
20
40
60
80
100
120 C
150
T
S
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
W
1.2
P
tot
Collector cutoff current I
CBO
= f (T
A
)
V
CB
= 25V
10
0
50
100
150
BCX 69
EHP00471
T
A
5
10
10
nA
10
CB0
5
5
5
10
10
5
4
3
2
1
0
max
typ
C
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00470
BCX 69
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
D
T
t
p
T
tot max
tot
P
DC
P
p
t
BCX69
4
Jul-23-2001
Collector-emitter saturation voltage
I
C
= f (V
CEsat
), h
FE
= 10
0
0.4
0.8
BCX 69
EHP00473
V
CE sat
V
mA
10
4
1
10
10
10
2
10
10
3
10
5
5
5
10
0
0.2
0.6
100
25
-50
C
C
C
C
Base-emitter saturation voltage
I
C
= f (V
BEsat
), h
FE
= 10
10
0
0.6
BCX 69
EHP00472
V
BE sat
10
mA
10
10
10
4
3
2
1
0
5
5
5
V
0.2
0.4
0.8
1.0
1.2
100
25
-50
C
C
C
C
Collector current I
C
= f (V
BE
)
V
CE
= 1V
10
0
0.6
BCX 69
EHP00474
V
BE
10
mA
10
10
10
4
3
2
1
0
5
5
5
V
0.2
0.4
0.8
1.0
1.2
100
25
-50
C
C
C
C
DC current gain h
FE
= f (I
C
)
V
CE
= 1V
10
10
10
10
BCX 69
EHP00475
h
mA
0
1
3
4
FE
3
10
10
2
0
10
5
5
10
1
2
10
5
100
25
-50
5
5
5
C
C
C
C
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