BCW60, BCX70
1
Jan-29-2002
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 (PNP)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BCW60A
BCW60B
BCW60C
BCW60D
BCW60FF
BCW60FN
BCX70G
BCX70H
BCX70J
BCX70K
AAs
ABs
ACs
ADs
AFs
ANs
AGs
AHs
AJs
AKs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
BCW60, BCX70
2
Jan-29-2002
Maximum Ratings
Parameter
Symbol
BCW60
BCW60FF BCX70 Unit
Collector-emitter voltage
V
CEO
32
32
45
V
Collector-base voltage
V
CBO
32
32
45
Emitter-base voltage
V
EBO
5
5
5
DC collector current
I
C
100
mA
Peak collector current
I
CM
200
Peak base current
I
BM
200
Total power dissipation
,
T
S
= 71 C
P
tot
330
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
240
K/W
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
BCW60/60FF
BCX70
V
(BR)CEO
32
45
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 A,
I
B
= 0
BCW60/60FF
BCX70
V
(BR)CBO
32
45
-
-
-
-
Emitter-base breakdown voltage
I
E
= 1 A,
I
C
= 0
V
(BR)EBO
5
-
-
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCW60, BCX70
3
Jan-29-2002
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Collector cutoff current
V
CB
= 32 V,
I
E
= 0
V
CB
= 45 V,
I
E
= 0
BCW60 /60FF
BCX70
I
CBO
-
-
-
-
20
20
nA
Collector cutoff current
V
CB
= 32 V,
I
E
= 0 ,
T
A
= 150 C
V
CB
= 45 V,
I
E
= 0 ,
T
A
= 150 C
BCW60 / 60FF
BCX70
I
CBO
-
-
-
-
20
20
A
Emitter cutoff current
V
EB
= 4 V,
I
C
= 0
I
EBO
-
-
20
nA
DC current gain 1)
I
C
= 10 A,
V
CE
= 5 V
h
FE
-grp. A/ G
h
FE
-grp. B/ H
h
FE
-grp. C/ J/ FF
h
FE
-grp. D/ K/ FN
h
FE
20
20
40
100
140
200
300
460
-
-
-
-
-
DC current gain 1)
I
C
= 2 mA,
V
CE
= 5 V
h
FE
-grp. A/ G
h
FE
-grp. B/ H
h
FE
-grp. C/ J/ FF
h
FE
-grp. D/ K/ FN
h
FE
120
180
250
380
170
250
350
500
220
310
460
630
DC current gain 1)
I
C
= 50 mA,
V
CE
= 1 V
h
FE
-grp. A/ G
h
FE
-grp. B/ H
h
FE
-grp. C/ J/ FF
h
FE
-grp. D/ K/ FN
h
FE
50
70
90
100
-
-
-
-
-
-
-
-
1) Pulse test: t
=
300
s, D = 2%
BCW60, BCX70
4
Jan-29-2002
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
max.
typ.
min.
DC Characteristics
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
0.12
0.2
V
0.25
0.55
-
-
V
CEsat
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
V
BEsat
0.7
0.83
0.85
1.05
-
-
-
0.75
-
V
BE(ON)
-
0.55
-
0.52
0.65
0.78
Base-emitter voltage 1)
I
C
= 10 A,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 50 mA,
V
CE
= 1 V
AC Characteristics
-
250
-
f
T
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
MHz
-
3
C
cb
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
-
pF
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
-
C
eb
-
8
h
FE
-grp.
A / G
B / H
C / J / FF
D / K / FN
h
11e
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
-
-
-
-
2.7
3.6
4.5
7.5
-
-
-
-
k
Open-circuit reverse voltage transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
| h
FE
-grp.
A / G
B / H
C / J/FF
D / K / FN
h
12e
-
-
-
-
1.5
2
2
3
-
-
-
-
10
-4
1) Pulse test: t
=
300
s, D = 2%
BCW60, BCX70
5
Jan-29-2002
Electrical Characteristics
at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Short-circuit forward current transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
| h
FE
-grp.
A / G
B / H
C / J/ FF
D / K / FN
h
21e
-
-
-
-
200
260
330
520
-
-
-
-
-
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-grp.
A / G
B / H
C / J / FF
D / K / FN
h
22e
-
-
-
-
18
24
30
50
-
-
-
-
S
Noise figure
I
C
= 100 A,
V
CE
= 5 V,
R
S
= 1
k
,
f
= 1 kHz,
f
= 200
Hz
h
FE
-grp.
A - K
FF - FN
F
-
-
2
1
-
2
dB
Equivalent noise voltage
I
C
= 200 A,
V
CE
= 5 V,
R
S
= 2
k
,
f
= 10 ... 50 Hz
h
FE
-grp.
FF / FN
V
n
-
-
0.135 V
BCW60, BCX70
6
Jan-29-2002
Collector-base capacitance C
CB
= f (V
CBO
)
Emitter-base capacitance
C
EB
= f (V
EBO
)
10
EHP00327
BCW 60/BCX 70
-1
1
10
V
10
0
6
12
pF
0
2
4
8
10
CBO
V
V
EBO
EBO
C
C
CBO
EBO
C
C
CBO
)
)
(
(
Total power dissipation
P
tot
= f(T
S
)
0
15
30
45
60
75
90 105 120
C
150
T
S
0
30
60
90
120
150
180
210
240
270
300
mW
360
P
tot
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00328
BCW 60/BCX 70
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
D
T
t
p
T
tot max
tot
P
DC
P
p
t
Transition frequency
f
T
= f (I
C
)
V
CE
= 5V
10
EHP00330
BCW 60/BCX 70
-1
2
10
mA
1
10
3
10
5
10
0
10
1
10
2
C
T
f
MHz
BCW60, BCX70
7
Jan-29-2002
Base-emitter saturation voltage
I
C
= f (V
BEsat
), h
FE
= 40
0
10
EHP00331
BCW 60/BCX 70
BE sat
V
0.6
V
1.2
-1
10
0
10
1
2
10
5
5
C
mA
0.2
0.4
0.8
C
25
100 C
-50 C
Collector-emitter saturation voltage
I
C
= f (V
CEsat
), h
FE
= 40
0
10
EHP00332
BCW 60/BCX 70
CEsat
V
V
0.5
-1
10
0
10
1
2
10
5
5
C
mA
0.1
0.2
0.3
0.4
C
100
25 C
-50 C
Collector current
I
C
= f (V
BE
)
V
CE
= 5V
0
10
EHP00333
BCW 60/BCX 70
BE
V
0.5
V
1.0
-2
10
-1
10
0
2
10
5
5
C
mA
5
1
10
C
100
25
-50
C
C
DC current gain
h
FE
= f (I
C
)
V
CE
= 5V
10
EHP00334
BCW 60/BCX 70
-2
2
10
mA
0
10
3
10
5
5
10
-1
10
0
10
1
C
FE
h
1
10
2
10
C
100
5
25 C
-50 C
BCW60, BCX70
8
Jan-29-2002
Collector cutoff current
I
CBO
= f (T
A
)
V
CB
= V
CEmax
0
10
EHP00335
BCW 60/BCX 70
A
T
150
-1
4
10
CBO
nA
50
100
0
10
1
10
3
10
C
typ
max
10
2
h parameter
h
e
= f (I
C
) normalized
V
CE
= 5V
10
EHP00336
BCW 60/BCX 70
-1
1
10
mA
-1
10
2
10
5
5
10
0
10
0
C
e
h
1
10
5
CE
V
= 5 V
11e
h
h
12e
h
21e
h
22e
5
h parameter
h
e
= f (V
CE
) normalized
I
C
= 2mA
0
0
EHP00337
BCW 60/BCX 70
CE
V
30
10
20
0.5
1.0
1.5
2.0
h
e
V
C
= 2 mA
h
11e
21e
h
12e
h
22e
h
Noise figure
F = f (V
CE
)
I
C
= 0.2mA, R
S
= 2k
, f = 1kHz
10
EHP00338
BCW 60/BCX 70
-1
2
10
V
5
10
0
10
1
F
10
15
20
dB
0
CE
V
BCW60, BCX70
9
Jan-29-2002
Noise figure
F = f (I
C
)
V
CE
= 5V, f = 120Hz
10
EHP00340
BCW 60/BCX 70
-3
1
10
mA
5
10
-2
10
-1
F
0
10
10
15
20
dB
0
C
S
R = 1 M
100 k
10 k
1 k
500
Noise figure
F = f (f)
I
C
= 0.2mA, V
CE
= 5V, R
S
= 2k
10
EHP00339
BCW 60/BCX 70
-2
2
10
kHz
5
10
-1
10
0
F
1
10
10
15
20
dB
f
0
Noise figure
F = f (I
C
)
V
CE
= 5V, f = 1kHz
10
EHP00341
BCW 60/BCX 70
-3
1
10
mA
5
10
-2
10
-1
F
0
10
10
15
20
dB
0
C
= 1 M
S
R
100 k
10 k
1 k
500
Noise figure
F = f (I
C
)
V
CE
= 5V, f = 10kHz
10
EHP00342
BCW 60/BCX 70
-3
1
10
mA
5
10
-2
10
-1
F
0
10
10
15
20
dB
0
C
= 1 M
R
S
100 k
10 k
500
1 k
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