BCW60, BCX70
1
Jan-29-2002
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 (PNP)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BCW60A
BCW60B
BCW60C
BCW60D
BCW60FF
BCW60FN
BCX70G
BCX70H
BCX70J
BCX70K
AAs
ABs
ACs
ADs
AFs
ANs
AGs
AHs
AJs
AKs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
BCW60, BCX70
2
Jan-29-2002
Maximum Ratings
Parameter
Symbol
BCW60
BCW60FF BCX70 Unit
Collector-emitter voltage
V
CEO
32
32
45
V
Collector-base voltage
V
CBO
32
32
45
Emitter-base voltage
V
EBO
5
5
5
DC collector current
I
C
100
mA
Peak collector current
I
CM
200
Peak base current
I
BM
200
Total power dissipation
,
T
S
= 71 C
P
tot
330
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
240
K/W
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
BCW60/60FF
BCX70
V
(BR)CEO
32
45
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 A,
I
B
= 0
BCW60/60FF
BCX70
V
(BR)CBO
32
45
-
-
-
-
Emitter-base breakdown voltage
I
E
= 1 A,
I
C
= 0
V
(BR)EBO
5
-
-
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BCW60, BCX70
3
Jan-29-2002
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Collector cutoff current
V
CB
= 32 V,
I
E
= 0
V
CB
= 45 V,
I
E
= 0
BCW60 /60FF
BCX70
I
CBO
-
-
-
-
20
20
nA
Collector cutoff current
V
CB
= 32 V,
I
E
= 0 ,
T
A
= 150 C
V
CB
= 45 V,
I
E
= 0 ,
T
A
= 150 C
BCW60 / 60FF
BCX70
I
CBO
-
-
-
-
20
20
A
Emitter cutoff current
V
EB
= 4 V,
I
C
= 0
I
EBO
-
-
20
nA
DC current gain 1)
I
C
= 10 A,
V
CE
= 5 V
h
FE
-grp. A/ G
h
FE
-grp. B/ H
h
FE
-grp. C/ J/ FF
h
FE
-grp. D/ K/ FN
h
FE
20
20
40
100
140
200
300
460
-
-
-
-
-
DC current gain 1)
I
C
= 2 mA,
V
CE
= 5 V
h
FE
-grp. A/ G
h
FE
-grp. B/ H
h
FE
-grp. C/ J/ FF
h
FE
-grp. D/ K/ FN
h
FE
120
180
250
380
170
250
350
500
220
310
460
630
DC current gain 1)
I
C
= 50 mA,
V
CE
= 1 V
h
FE
-grp. A/ G
h
FE
-grp. B/ H
h
FE
-grp. C/ J/ FF
h
FE
-grp. D/ K/ FN
h
FE
50
70
90
100
-
-
-
-
-
-
-
-
1) Pulse test: t
=
300
s, D = 2%
BCW60, BCX70
4
Jan-29-2002
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
max.
typ.
min.
DC Characteristics
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
0.12
0.2
V
0.25
0.55
-
-
V
CEsat
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 0.25 mA
I
C
= 50 mA,
I
B
= 1.25 mA
V
BEsat
0.7
0.83
0.85
1.05
-
-
-
0.75
-
V
BE(ON)
-
0.55
-
0.52
0.65
0.78
Base-emitter voltage 1)
I
C
= 10 A,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 50 mA,
V
CE
= 1 V
AC Characteristics
-
250
-
f
T
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
MHz
-
3
C
cb
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
-
pF
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
-
C
eb
-
8
h
FE
-grp.
A / G
B / H
C / J / FF
D / K / FN
h
11e
Short-circuit input impedance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
-
-
-
-
2.7
3.6
4.5
7.5
-
-
-
-
k
Open-circuit reverse voltage transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
| h
FE
-grp.
A / G
B / H
C / J/FF
D / K / FN
h
12e
-
-
-
-
1.5
2
2
3
-
-
-
-
10
-4
1) Pulse test: t
=
300
s, D = 2%
BCW60, BCX70
5
Jan-29-2002
Electrical Characteristics
at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Short-circuit forward current transf.ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
| h
FE
-grp.
A / G
B / H
C / J/ FF
D / K / FN
h
21e
-
-
-
-
200
260
330
520
-
-
-
-
-
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
h
FE
-grp.
A / G
B / H
C / J / FF
D / K / FN
h
22e
-
-
-
-
18
24
30
50
-
-
-
-
S
Noise figure
I
C
= 100 A,
V
CE
= 5 V,
R
S
= 1
k
,
f
= 1 kHz,
f
= 200
Hz
h
FE
-grp.
A - K
FF - FN
F
-
-
2
1
-
2
dB
Equivalent noise voltage
I
C
= 200 A,
V
CE
= 5 V,
R
S
= 2
k
,
f
= 10 ... 50 Hz
h
FE
-grp.
FF / FN
V
n
-
-
0.135 V
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