BF2030
Oct-05-2001
1
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1GHz
Operating voltage 5V
VPS05178
2
1
3
4
EHA07461
GND
G1
G2
Drain
AGC
HF
Input
HF Output
+ DC
GG
V
G1
R
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Class 2 (2000V - 4000V) pin to pin Human Body Model
Type
Marking
Pin Configuration
Package
BF2030
NEs
1 = S
2 = D
3 = G2
4 = G1
SOT143
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-source voltage
V
DS
8
V
Continuos drain current
I
D
20
mA
Gate 1/gate 2 peak source current
I
G1/2SM
10
Gate 1 (external biasing)
+V
G1SE
6
V
Total power dissipation
, T
S
= 94 C
P
tot
200
mW
Storage temperature
T
stg
-55 ... 150
C
Channel temperature
T
ch
150
Thermal Resistance
Channel - soldering point
1)
R
thchs
370
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BF2030
Oct-05-2001
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Drain-source breakdown voltage
I
D
= 20 A, V
G1S
= 0 V, V
G2S
= 0 V
V
(BR)DS
10
-
-
V
Gate 1 - source breakdown voltage
+I
G1S
= 10 mA, V
G2S
= 0 V, V
DS
= 0 V
+V
(BR)G1SS
6
-
15
Gate 2 - source breakdown voltage
+I
G2S
= 10 mA, V
G1S
= 0 V, V
DS
= 0 V
+V
(BR)G2SS
6
-
15
Gate 1 source leakage current
V
G1S
= 5 V, V
G2S
= 0 V, V
DS
= 0 V
+I
G1SS
-
-
50
nA
Gate 2 source leakage current
V
G2S
= 5 V, V
G1S
= 0 V, V
DS
= 0 V
+I
G2SS
-
-
50
nA
Drain current
V
DS
= 5 V, V
G1S
= 0 V, V
G2S
= 4 V
I
DSS
-
50
A
Drain-source current
V
DS
= 5 V, V
G2S
= 4 V, R
G1
= 100 k
I
DSX
-
12
-
mA
Gate 2-source pinch-off voltage
V
DS
= 5 V, I
D
= 20 A
V
G2S(p)
0.3
0.6
-
V
Gate 1-source pinch-off voltage
V
DS
= 5 V, V
G2S
= 4 V, I
D
= 20 A
V
G1S(p)
0.3
0.5
-
BF2030
Oct-05-2001
3
Electrical Characteristics at T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
Forward transconductance
V
DS
= 5 V, I
D
= 10 mA, V
G2S
= 4 V
g
fs
-
31
-
mS
Gate 1 input capacitance
V
DS
= 5 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 1 MHz
C
g1ss
-
2.4
-
pF
Output capacitance
V
DS
= 5 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 1 MHz
C
dss
-
1.3
-
Power gain
V
DS
= 5 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 800 MHz
G
ps
20
23
-
dB
Noise figure
V
DS
= 5 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 800 MHz
F
-
1.5
2.2
Gain control range
V
DS
= 5 V, VG2S = 4 ... 0V, f = 800 MHz
G
ps
45
50
-
BF2030
Oct-05-2001
4
Total power dissipation P
tot
= f (T
S
)
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
Drain current I
D
= f (I
G1
)
V
G2S
= 4 V
0
10
20
30
40
50
60
70
80 A
100
I
G1
0
2
4
6
8
10
12
14
16
18
20
22
24
mA
28
I
D
Output characteristics I
D
= f (V
DS
)
V
G2S
= 4 V
V
G1S
= Parameter
0
1
2
3
4
5
6
7
8
V
10
V
DS
0
2
4
6
8
10
12
14
16
mA
20
I
D
1.4V
1.3V
1.2V
1.1V
1V
0.8V
Gate 1 current I
G1
= f (V
G1S
)
V
DS
= 5 V
V
G2S
= Parameter
0
0.4
0.8
1.2
1.6
2
2.4 V
3
V
DS
0
15
30
45
60
75
90
105
120
135
150
165
180
A
210
I
G1
4V
3.5V
3V
2.5V
2V
BF2030
Oct-05-2001
5
Drain current I
D
= f (V
G1S
)
V
DS
= 5 V
V
G2S
= Parameter
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 V
2
V
G1S
0
2
4
6
8
10
12
14
16
18
20
22
24
mA
30
I
D
4V
3V
2V
1.5V
Gate 1 forward transconductance
g
fs
= f (I
D
)
V
DS
= 5 V, V
G2S
= Parameter
0
4
8
12
16
20
24 mA
30
I
D
0
5
10
15
20
25
30
mS
40
g
fs
4V
3V
2.5V
2V
Drain current I
D
= f (V
GG
)
V
G2S
= 4 V
R
G1
= Parameter in k
0
1
2
3
4
5
6
V
8
V
GG
=V
DS
0
2
4
6
8
10
12
14
16
18
20
22
24
mA
28
I
D
70
80
100
120
Drain current I
D
= f (V
GG
)
V
DS = 5 V,
V
G2S = 4 V,
R
G1 = 100 k
(connected to
V
GG,
V
GG=gate1 supply voltage )
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
GG
0
1
2
3
4
5
6
7
8
9
10
11
mA
13
I
D
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