BF771
1
Jun-27-2001
NPN Silicon RF Transistor
For modulators and
amplifiers in TV and VCR tuners
1
2
3
VPS05161
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BF771
RBs
1 = B
2 = E
3 = C
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
80
mA
Base current
I
B
10
Total power dissipation
T
S
69 C
1)
P
tot
580
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
140
K/W
1T
S
is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA
please refer to Application Note Thermal Resistance
BF771
2
Jun-27-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Unit
Values
max.
min.
typ.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
(BR)CEO
-
-
V
12
-
-
100
I
CES
A
Collector-emitter cutoff current
V
CE
= 20 V, V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V, I
C
= 0
A
1
-
-
I
EBO
h
FE
50
100
DC current gain
I
C
= 30 mA, V
CE
= 8 V
200
-
BF771
3
Jun-27-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 50 mA, V
CE
= 8 V, f = 500 MHz
f
T
6
8
-
GHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
0.68
1
pF
Collector-emitter capacitance
V
CE
= 10 V, f = 1 MHz
C
ce
-
0.24
-
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
1.8
-
Noise figure
I
C
= 10 mA, V
CE
= 8 V, Z
S
= Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
F
-
-
1.3
2.1
-
-
dB
Power gain, maximum available
1)
I
C
= 30 mA, V
CE
= 8 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
G
ma
-
-
14.5
9
-
-
Transducer gain
I
C
= 30 mA, V
CE
= 8 V, Z
S
= Z
L
= 50
,
f
= 900 MHz
f
= 1.8 GHz
|S
21e
|
2
-
-
12.5
7
-
-
1
G
ma
= |S
21
/ S
12
| (k-(k
2
-1)
1/2
)
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