Nov-30-2000
1
BF 775
1
2
3
VPS05161
NPN Silicon RF Transistor
Especially suitable for TV-Sat and UHF tuners
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BF 775
LOs
1 = B
2 = E
3 = C
SOT-23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
15
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2.5
Collector current
I
C
30
mA
Base current
I
B
4
Total power dissipation
T
S
48C
1)
P
tot
280
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
R
thJS
365
K/W
1
T
S
is measured on the collector lead at the soldering point to the pcb
Nov-30-2000
2
BF 775
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
(BR)CEO
15
-
-
V
Collector-emitter cutoff current
V
CE
= 20 V, V
BE
= 0
I
CES
-
-
10
A
Collector -base cutoff current
V
CB
= 10 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 2.5 V, I
C
= 0
I
EBO
-
-
100
A
DC current gain
I
C
= 10 mA, V
CE
= 8 V
h
FE
40
100
200
-
Nov-30-2000
3
BF 775
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 10 mA, V
CE
= 8 V, f = 500 MHz
f
T
3.5
5.5
-
GHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
0.38
0.6
pF
Collector emitter capacitance
V
CE
= 10 V, f = 1 MHz
C
ce
-
0.2
-
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
0.5
-
Noise figure
I
C
= 2 mA, V
CE
= 6 V, Z
S
= Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
F
-
-
1
1.6
-
-
dB
Power gain, maximum available
1)
I
C
= 10 mA, V
CE
= 8 V, Z
S
= Z
Sopt
,
Z
L
= Z
Lopt
, f = 900 MHz
f
= 1.8 GHz
G
ma
-
-
16
10.5
-
-
Transducer gain
I
C
= 10 mA, V
CE
= 8 V, Z
S
= Z
L
= 50
,
f
= 900 MHz
f
= 1.8 GHz
|S
21e
|
2
-
-
13
7.5
-
-
1
G
ma
= |S
21
/S
12
| (k-(k
2
-1)
1/2
)
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