BF799
Apr-15-2003
1
NPN Silicon RF Transistor
For linear broadband amplifier
application up to 500 MHz
SAW filter driver in TV tuners
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BF799
LKs
1 = B
2 = E
3 = C
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
20
V
Collector-emitter voltage
V
CES
30
Collector-base voltage
V
CBO
30
Emitter-base voltage
V
EBO
3
Collector current
I
C
35
mA
Peak collector current
,
I
CM
50
Peak base current
I
BM
15
Total power dissipation
T
S
69 C
1)
P
tot
280
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
290
K/W
1T
S
is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA
please refer to Application Note Thermal Resistance
BF799
Apr-15-2003
2
Electrical Characteristics
at T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
20
-
-
V
Collector-base breakdown voltage
I
C
= 10 A,
I
E
= 0
V
(BR)CBO
30
-
-
Base-emitter breakdown voltage
I
E
= 10 A,
I
C
= 0
V
(BR)EBO
3
-
-
Collector-base cutoff current
V
CB
= 20 V,
I
E
= 0
I
CBO
-
-
100
nA
DC current gain
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 20 mA,
V
CE
= 10 V
h
FE
35
40
95
100
-
250
-
Collector-emitter saturation voltage
I
C
= 20 mA,
I
B
= 2 mA
V
CEsat
-
0.1
0.3
V
Base-emitter saturation voltage
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
-
-
0.95
AC characteristics
Transition frequency
I
C
= 5 mA,
V
CE
= 10 V,
f
= 100 MHz
I
C
= 20 mA,
V
CE
= 8 V,
f
= 100 MHz
f
T
-
-
800
1100
-
-
MHz
Output capacitance
V
CB
= 10 V,
I
E
= 0 mA,
f
= 1 MHz
C
ob
-
0.96
-
pF
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
-
0.7
-
Collector-emitter capacitance
V
CE
= 10 V,
f
= 1 MHz
C
ce
-
0.28
-
Noise figure
I
C
= 5 mA,
V
CE
= 10 V,
f
= 100 MHz,
Z
S
= 50
F
-
3
-
dB
Output conductance
I
C
= 20 mA,
V
CE
= 10 V,
f
= 35 MHz
g
22e
-
60
-
S
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