BFP182W
Aug-09-2001
1
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
f
T
= 8 GHz
F = 1.2 dB at 900 MHz
VPS05605
4
2
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP182W
RGs
1 = E
2 = C
3 = E
4 = B
SOT343
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
35
mA
Base current
I
B
4
Total power dissipation
T
S
91 C
1)
P
tot
250
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
235
K/W
1T
S
is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA
please refer to Application Note Thermal Resistance
BFP182W
Aug-09-2001
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Values
Unit
Symbol
min.
max.
typ.
DC characteristics
V
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
12
-
-
A
Collector-emitter cutoff current
V
CE
= 20 V, V
BE
= 0
-
100
-
I
CES
Collector-base cutoff current
V
CB
= 10 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V, I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 10 mA, V
CE
= 8 V
h
FE
50
100
200
-
BFP182W
Aug-09-2001
3
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 15 mA, V
CE
= 8 V, f = 500 MHz
f
T
6
8
-
GHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
0.3
0.45
pF
Collector-emitter capacitance
V
CE
= 10 V, f = 1 MHz
C
ce
-
0.27
-
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
0.6
-
Noise figure
I
C
= 3 mA, V
CE
= 8 V, Z
S
= Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
F
-
-
1.2
1.9
-
-
dB
Power gain, maximum stable
1)
I
C
= 10 mA, V
CE
= 8 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f
= 900 MHz
G
ms
-
21.5
-
Power gain, maximum available
2)
I
C
= 10 mA, V
CE
= 8 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f
= 1.8 GHz
G
ma
-
15.5
-
Transducer gain
I
C
= 10 mA, V
CE
= 8 V, Z
S
= Z
L
= 50
,
f
= 900 MHz
f
= 1.8 GHz
|S
21e
|
2
-
-
17.5
12
-
-
1
G
ms
= |S
21
/ S
12
|
2
G
ma
= |S
21
/ S
12
| (k-(k
2
-1)
1/2
)
BFP182W
Aug-09-2001
4
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
BF =
84.113
-
IKF =
0.14414
A
BR =
10.004
-
IKR =
0.039478
A
RB =
3.4217
RE =
2.1858
VJE =
1.0378
V
XTF =
0.43147
-
PTF =
0
deg
MJC =
0.31068
-
CJS =
0
fF
XTB =
0
-
FC =
0.64175
-
IS =
4.8499
fA
VAF =
21.742
V
NE =
0.91624
-
VAR =
2.2595
V
NC =
0.5641
-
RBM =
2.8263
CJE =
8.8619
fF
TF =
22.72
ps
ITF =
6.5523
mA
VJC =
1.0132
V
TR =
1.7541
ns
MJS =
0
-
XTI =
3
-
NF =
0.56639
-
ISE =
8.4254
fA
NR =
0.54818
-
ISC =
5.9438
fA
IRB =
0.071955
mA
RC =
1.8159
MJE =
0.40796
-
VTF =
0.34608
V
CJC =
490.25
fF
XCJC =
0.19281
-
VJS =
0.75
V
EG =
1.11
eV
TNOM
300
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut fr Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L
BI
=
0.43
nH
L
BO
=
0.47
nH
L
EI
=
0.26
nH
L
EO
=
0.12
nH
L
CI
=
0.06
nH
L
CO
=
0.36
nH
C
BE
=
68
fF
C
CB
=
46
fF
C
CE
=
232
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
BFP182W
Aug-09-2001
5
Total power dissipation P
tot
= f (T
S
)
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
Permissible Pulse Load R
thJS
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/P
totDC
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
P
tot
m
ax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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