BFR183W
Aug-09-2001
1
NPN Silicon RF Transistor
For low-noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
f
T
= 8 GHz
F = 1.2 dB at 900 MHz
1
3
VSO05561
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFR183W
RHs
1 = B
2 = E
3 = C
SOT323
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
65
mA
Base current
I
B
5
Total power dissipation
T
S
56 C
1)
P
tot
450
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
210
K/W
1T
S
is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA
please refer to Application Note Thermal Resistance
BFR183W
Aug-09-2001
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
(BR)CEO
12
-
-
V
Collector-emitter cutoff current
V
CE
= 20 V, V
BE
= 0
I
CES
-
-
100
A
Collector-base cutoff current
V
CB
= 10 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V, I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 15 mA, V
CE
= 8 V
h
FE
50
100
200
-
BFR183W
Aug-09-2001
3
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 25 mA, V
CE
= 8 V, f = 500 MHz
f
T
6
8
-
GHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
0.46
0.7
pF
Collector-emitter capacitance
V
CE
= 10 V, f = 1 MHz
C
ce
-
0.24
-
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
1
-
Noise figure
I
C
= 5 mA, V
CE
= 8 V, Z
S
= Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
F
-
-
1.2
2
-
-
dB
Power gain, maximum available
1)
I
C
= 15 mA, V
CE
= 8 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
G
ma
-
-
18
11.5
-
-
Transducer gain
I
C
= 15 mA, V
CE
= 8 V, Z
S
= Z
L
= 50
,
f
= 900 MHz
f
= 1.8 GHz
|S
21e
|
2
-
-
15
9
-
-
1
G
ma
= |S
21
/ S
12
| (k-(k
2
-1)
1/2
)
BFR183W
Aug-09-2001
4
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
1.0345
fA
VAF =
14.772
V
NE =
1.2149
-
VAR =
3.4276
V
NC =
0.85331
-
RBM =
1.0112
CJE =
23.077
fF
TF =
22.746
ps
ITF =
1.8773
mA
VJC =
1.1967
V
TR =
1.0553
ns
MJS =
0
-
XTI =
3
-
BF =
115.98
-
IKF =
0.14562
A
BR =
10.016
-
IKR =
0.013483
A
RB =
2.5426
RE =
1.3435
VJE =
1.0792
V
XTF =
0.36823
-
PTF =
0
deg
MJC =
0.3
-
CJS =
0
fF
XTB =
0
-
FC =
0.54852
-
NF =
0.80799
-
ISE =
16.818
fA
NR =
0.99543
-
ISC =
1.3559
fA
IRB =
0.43801
mA
RC =
0.20486
MJE =
0.45354
-
VTF =
0.50905
V
CJC =
460.11
fF
XCJC =
0.053823
-
VJS =
0.75
V
EG =
1.11
eV
TNOM
300
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut fr Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L
BI
=
0.57
nH
L
BO
=
0.4
nH
L
EI
=
0.43
nH
L
EO
=
0.5
nH
L
CI
=
0
nH
L
CO
=
0.41
nH
C
BE
=
61
fF
C
CB
=
101
fF
C
CE
=
175
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
BFR183W
Aug-09-2001
5
Total power dissipation P
tot
= f (T
S
)
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
250
300
350
400
mW
500
P
tot
Permissible Pulse Load R
thJS
= f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/P
totDC
= f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
tot
m
ax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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