Jun-16-2003
1
BFR360T
VPS05996
1
2
3
NPN Silicon RF Transistor
Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFR360T
FBs
1 = B
2 = E
3 = C
SC75
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
6
V
Collector-emitter voltage
V
CES
15
Collector-base voltage
V
CBO
15
Emitter-base voltage
V
EBO
2
Collector current
I
C
35
mA
Base current
I
B
4
Total power dissipation
1)
T
S
81C
P
tot
210
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
2)
R
thJS
325
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA
please refer to Application Note Thermal Resistance
Jun-16-2003
2
BFR360T
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
(BR)CEO
6
9
-
V
Collector-emitter cutoff current
V
CE
= 15 V, V
BE
= 0
I
CES
-
-
10
A
Collector-base cutoff current
V
CB
= 5 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V, I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 15 mA, V
CE
= 3 V
h
FE
60
130
200
-
Jun-16-2003
3
BFR360T
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics (verified by random sampling)
Transition frequency
I
C
= 15 mA, V
CE
= 3 V, f = 1 GHz
f
T
10
14
-
GHz
Collector-base capacitance
V
CB
= 5 V, f = 1 MHz, emitter grounded
C
cb
-
0.34
0.5
pF
Collector emitter capacitance
V
CE
= 5 V, f = 1 MHz, base grounded
C
ce
-
0.2
-
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz, collector grounded
C
eb
-
0.4
-
Noise figure
I
C
= 3 mA, V
CE
= 3 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f = 1.8 GHz
F
min
-
1
-
dB
Power gain, maximum available
1)
I
C
= 15 mA, V
CE
= 3 V, Z
S
= Z
Sopt
,
Z
L
= Z
Lopt
, f = 1.8 GHz
I
C
= 15 mA, V
CE
= 3 V, Z
S
= Z
Sopt
,
Z
L
= Z
Lopt
, f = 3 GHz
G
ma
-
-
13.5
9.5
-
-
Transducer gain
I
C
= 15 mA, V
CE
= 3 V, Z
S
= Z
L
= 50
,
f = 1.8 GHz
I
C
= 15 mA, V
CE
= 3 V, Z
S
= Z
L
= 50
,
f = 3 GHz
|S
21e
|
2
-
-
12
8
-
-
dB
Third order intercept point at output
2)
V
CE
= 3 V, I
C
= 15 mA, f = 1.8 GHz,
Z
S
= Z
L
= 50
IP
3
-
25
-
dBm
1dB Compression point at output
I
C
= 15 mA, V
CE
= 3 V, Z
S
= Z
L
= 50 ,
f = 1.8 GHz
P
-1dB
-
9
-
1G
ma
= |S
21e
/ S
12e
| (k-(k-1)
1/2
)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
from 0.1 MHz to 6 GHz
Jun-16-2003
4
BFR360T
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
NF =
1
-
ISE =
150
fA
NR =
1
-
ISC =
20
fA
IRB =
74
A
RC =
0.35
MJE =
0.5
-
VTF =
0.198
V
CJC =
473
fF
XCJC =
0.129
-
VJS =
0.75
V
EG =
1.11
eV
NK =
0.5
K
IS =
0.0689
fA
VAF =
20
V
NE =
2.4
-
VAR =
60
V
NC =
1.4
-
RBM =
7.31
CJE =
400
fF
TF =
9.219
ps
ITF =
1.336
mA
VJC =
0.864
V
TR =
1.92
ns
MJS =
0
-
XTI =
0
-
AF =
1
-
BF =
147
-
IKF =
77.28
mA
BR =
6
-
IKR =
0.3
A
RB =
0.1
RE =
78.2
m
VJE =
1.3
V
XTF =
0.115
-
PTF =
0
deg
MJC =
0.486
-
CJS =
0
fF
XTB =
0
-
FC =
0.954
KF =
1E-14
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
L
1
=
0.762
nH
L
2
=
0.706
nH
L
3
=
0.382
nH
C
1
=
62
fF
C
2
=
84
fF
C
3
=
180
fF
C
4
=
7
fF
C
5
=
40
fF
C
6
=
48
fF
EHA07524
Transistor
C'
L
E'
B'
3
4
C
C
Chip
E
L
1
5
C
B
2
L
C
6
C
1
C
2
C
3
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
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