BFR92P
Aug-03-2001
1
NPN Silicon RF Transistor
For broadband amplifiers up to 2 GHz and
fast non-saturated switches at collector currents
from 0.5 mA to 20 mA
Complementary type: BFT 92 (PNP)
1
2
3
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFR92P
GFs
1 = B
2 = E
3 = C
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
15
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2.5
Collector current
I
C
30
mA
Base current
I
B
4
Total power dissipation
T
S
48 C
1)
P
tot
280
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
365
K/W
1T
S
is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA
please refer to Application Note Thermal Resistance
BFR92P
Aug-03-2001
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
(BR)CEO
15
-
-
V
Collector-emitter cutoff current
V
CE
= 20 V, V
BE
= 0
I
CES
-
-
10
A
Collector-base cutoff current
V
CB
= 10 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 2.5 V, I
C
= 0
I
EBO
-
-
100
A
DC current gain
I
C
= 15 mA, V
CE
= 8 V
h
FE
40
100
200
-
BFR92P
Aug-03-2001
3
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 15 mA, V
CE
= 8 V, f = 500 MHz
f
T
3.5
5
-
GHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
0.38
0.6
pF
Collector-emitter capacitance
V
CE
= 10 V, f = 1 MHz
C
ce
-
0.2
-
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
0.7
-
Noise figure
I
C
= 2 mA, V
CE
= 6 V, Z
S
= Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
F
-
-
1.8
2.9
-
-
dB
Power gain, maximum available
F)
I
C
= 15 mA, V
CE
= 8 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
G
ma
-
-
15
9.5
-
-
Transducer gain
I
C
= 15 mA, V
CE
= 8 V, Z
S
= Z
L
= 50
,
f
= 900 MHz
I
C
= 15 mA, V
CE
= 8 V
|S
21e
|
2
-
-
12.5
7
-
-
1
G
ma
= |S
21
/ S
12
| (k-(k
2
-1)
1/2
)
BFR92P
Aug-03-2001
4
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.1213
fA
VAF =
30
V
NE =
1.9052
-
VAR =
14.599
V
NC =
1.371
-
RBM =
7.8145
CJE =
10.416
fF
TF =
26.796
ps
ITF =
4.4601
mA
VJC =
0.84079
V
TR =
1.2744
ns
MJS =
0
-
XTI =
3
-
BF =
94.733
-
IKF =
0.46227
A
BR =
10.729
-
IKR =
0.01
A
RB =
14.998
RE =
0.29088
VJE =
0.70618
V
XTF =
0.3817
-
PTF =
0
deg
MJC =
0.4085
-
CJS =
0
fF
XTB =
0
-
FC =
0.99545
-
NF =
1.0947
-
ISE =
129.55
fA
NR =
0.8983
-
ISC =
0.75557
fA
IRB =
0.01652
mA
RC =
0.13793
MJE =
0.34686
-
VTF =
0.32861
V
CJC =
946.47
fF
XCJC =
0.13464
-
VJS =
0.75
V
EG =
1.11
eV
TNOM
300
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut fr Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L
BI
=
0.85
nH
L
BO
=
0.51
nH
L
EI
=
0.69
nH
L
EO
=
0.61
nH
L
CI
=
0
nH
L
CO
=
0.49
nH
C
BE
=
73
fF
C
CB
=
84
fF
C
CE
=
165
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
BFR92P
Aug-03-2001
5
Total power dissipation
P
tot
= f (T
S
)
0
20
40
60
80
100
120 C
150
T
S
0
50
100
150
200
mW
300
P
tot
Permissible Pulse Load
R
thJS
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/P
totDC
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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