BFS17P
Jul-12-2001
1
NPN Silicon RF Transistor
For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
BFS17P
MCs
1 = B
2 = E
3 = C
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
15
V
Collector-base voltage
V
CBO
25
Emitter-base voltage
V
EBO
2.5
Collector current
I
C
25
mA
Peak collector current
, f = 10 MHz
I
CM
50
Total power dissipation
T
S
55 C
1)
P
tot
280
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
340
K/W
1T
S
is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA
please refer to Application Note Thermal Resistance
BFS17P
Jul-12-2001
2
Electrical Characteristics a T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Unit
Values
min.
max.
typ.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
(BR)CEO
15
-
V
-
Collector-base cutoff current
V
CB
= 10 V, I
E
= 0
V
CB
= 25 V, I
E
= 0
I
CBO
-
-
-
-
A
0.05
10
Emitter-base cutoff current
V
EB
= 2.5 V, I
C
= 0
I
EBO
-
100
-
DC current gain
I
C
= 2 mA, V
CE
= 1 V
I
C
= 25 mA, V
CE
= 1 V
h
FE
20
20
-
150
-
-
70
Collector-emitter saturation voltage
I
C
= 10 mA, I
B
= 1 mA
V
CEsat
-
0.1
0.4
V
BFS17P
Jul-12-2001
3
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Unit
Values
min.
max.
typ.
AC characteristics
Transition frequency
I
C
= 2 mA, V
CE
= 5 V, f = 200 MHz
I
C
= 25 mA, V
CE
= 5 V, f = 200 MHz
f
T
1
1.3
1.4
2.5
GHz
-
-
Collector-base capacitance
V
CB
= 5 V, f = 1 MHz
C
cb
0.55
-
pF
0.8
Collector-emitter capacitance
V
CE
= 5 V, f = 1 MHz
C
ce
0.25
-
-
Input capacitance
V
EB
= 0.5 V, I
C
= 0 , f = 1 MHz
C
ibo
-
-
1.45
Output capacitance
V
CE
= 5 V, V
BE
= 0 , f = 1 MHz
C
obs
-
-
1.5
Noise figure
I
C
= 2 mA, V
CE
= 5 V, f = 800 MHz,
Z
S
= 0
F
3.5
-
dB
5
Transducer gain
I
C
= 20 mA, V
CE
= 5 V, Z
S
= Z
L
= 50
,
f
= 500 MHz
|S
21e
|
2
12.7
-
-
Linear output voltage
I
C
= 14 mA, V
CE
= 5 V, d
im
= 60 dB,
f
1
= 806 MHz, f
2
= 810 MHz, Z
S
= Z
L
= 50
V
01
=V
02
-
mV
-
100
Third order intercept point
I
C
= 14 mA, V
CE
= 5 V, Z
S
=Z
Sopt
, Z
L
=Z
Lopt
,
f
= 800 MHz
IP
3
-
23
-
dBm
BFS17P
Jul-12-2001
4
Total power dissipation P
tot
= f(T
S
)
0
15
30
45
60
75
90 105 120
C
150
T
S
0
40
80
120
160
200
240
mW
320
P
tot
Permissible Pulse Load
R
thJS
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/P
totDC
= f (t
p
)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-
P
tot
m
ax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BFS17P
Jul-12-2001
5
Collector-base capacitance
C
cb
= f (V
CB
)
f = 1MHz
0
4
8
12
16
20
V
26
V
CB
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
pF
1.3
C
cb
Transition frequency
f
T
= f (I
C
)
V
CE
= Parameter
0
5
10
15
20
mA
30
I
C
0.0
0.5
1.0
1.5
2.0
GHz
3.0
f
T
10V
5V
3V
2V
1V
0.7V
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