BFS481
1
Jun-27-2001
NPN Silicon RF Transistor
For low-noise, high-gain broadband amplifier
at collector currents from 0.5 mA to 12 mA
f
T
= 8 GHz
F = 1.4 dB at 900 MHz
Two (galvanic) internal isolated
Transistors in one package
VPS05604
6
3
1
5
4
2
EHA07196
6
5
4
3
2
1
C1
E2
B2
C2
E1
B1
TR1
TR2
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFS481
RFs
1=B 2=E 3=C 4=B 5=E 6=C SOT363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
12
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
2
Collector current
I
C
20
mA
Base current
I
B
2
Total power dissipation
T
S
83 C
1)
P
tot
175
mW
Junction temperature
T
j
150
C
Ambient temperature
T
A
-65 ... 150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
2)
R
thJS
380
K/W
1T
S
is measured on the collector lead at the soldering point to the pcb
2For calculation of R
thJA
please refer to Application Note Thermal Resistance
BFS481
2
Jun-27-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA, I
B
= 0
V
(BR)CEO
12
-
-
V
Collector-emitter cutoff current
V
CE
= 20 V, V
BE
= 0
I
CES
-
-
100
A
Collector-base cutoff current
V
CB
= 10 V, I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 1 V, I
C
= 0
I
EBO
-
-
1
A
DC current gain
I
C
= 5 mA, V
CE
= 8 V
h
FE
50
100
200
-
BFS481
3
Jun-27-2001
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 10 mA, V
CE
= 8 V, f = 500 MHz
f
T
6
8
-
GHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
-
0.24
0.4
pF
Collector-emitter capacitance
V
CE
= 10 V, f = 1 MHz
C
ce
-
0.11
-
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
C
eb
-
0.35
-
Noise figure
I
C
= 2 mA, V
CE
= 8 V, Z
S
= Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
F
-
-
1.45
1.8
-
-
dB
Power gain, maximum stable
1)
I
C
= 5 mA, V
CE
= 8 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f
= 900 MHz
G
ms
-
19
-
Power gain, maximum available
2)
I
C
= 5 mA, V
CE
= 8 V, Z
S
= Z
Sopt
, Z
L
= Z
Lopt
,
f
= 1.8 GHz
G
ma
-
14.5
-
Transducer gain
I
C
= 5 mA, V
CE
= 8 V, Z
S
= Z
L
= 50
,
f
= 900 MHz
f
= 1.8 GHz
|S
21e
|
2
-
-
15.5
10.5
-
-
1
G
ms
= |S
21
/ S
12
|
2
G
ma
= |S
21
/ S
12
| (k-(k
2
-1)
1/2
)
PDF 
ZIP
