MMIC
B G A 4 1 6
R F C a s c o d e A m p l i f i e r
D a t a s h e e t , B G A 4 1 6 , J u n e 2 0 0 2
N e v e r s t o p t h i n k i n g .
W i r e l e s s
S i l i c o n D i s c r e t e s
Edition 2002-06-14
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 2002
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted char-
acteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infin-
eon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
BGA416
Data sheet
Revision History:
2002-06-14
Previous Version:
2001-10-30
Page
Subjects (major changes since last revision)
Preliminary status removed
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
mcdocu.comments@infineon.com
Data sheet
4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Marking
Chip
BGA416
SOT143
C1s
T0553
RF Cascode Amplifier
BGA416
VPS05178
2
1
3
4
Features
G
MA
= 23dB at 900MHz
Ultra high reverse isolation,
62 dB at 900MHz
Low noise figure,
F
50
= 1.3dB at 900MHz
On chip bias circuitry,
5.5 mA bias current at V
CC
= 3V
Typical supply voltage: 2.5 to 5.0V
SIEGET
-25 technology
Applications
Buffer amplifiers
LNAs
Oscillator active devices
RFout, 4
RFin, 2
GND, 3
GND, 1
Bias
Description
BGA416 is a monolithic silicon cascode
amplifier with high reverse isolation. A
bias network is integrated for simplified
biasing.
BGA416
Data sheet
5
Maximum Ratings
Notes:
All Voltages refer to GND-Node
1)
Device current is equal to current into pin RFout
2)
T
S
is measured on the ground lead at the soldering point
Parameter
Symbol
Value
Unit
Voltage at pin RFout
V
OUT
6
V
Current into pin RFin
I
IN
0.5
mA
Device current
1)
I
D
20
mA
Input power
P
IN
8
dBm
Total power dissipation, T
S
< 123C
2)
P
tot
100
mW
Junction temperature
T
j
150
C
Ambient temperature range
T
A
-65 ... +150
C
Storage temperature range
T
STG
-65 ... +150
C
Thermal resistance: junction-soldering point
R
th JS
270
K/W
Electrical Characteristics at T
A
=25C (measured in test circuit specified in fig. 1)
V
CC
=3V, unless otherwise specified
Parameter
Symbol
min.
typ.
max.
Unit
Maximum available power gain
f=0.9GHz
f=1.8GHz
G
MA
23
14
dB
Insertion power gain
f=0.9GHz
f=1.8GHz
|S
21
|
2
17
11
dB
Reverse isolation
f=0.9GHz
f=1.8GHz
|S
12
|
62
40
dB
Noise figure (Z
S
=50
)
f=0.9GHz
f=1.8GHz
F
50
1.3
1.6
dB
Output power at 1dB gain compression
(Z
S
=Z
L
=50
)
f=0.9GHz
f=1.8GHz
P
-1dB
-3
-3
dBm
Output third order intercept point
(Z
S
=Z
L
=50
)
f=0.9GHz
f=1.8GHz
OIP
3
14
14
dBm
Device current
I
D
5.5
mA
PDF 
ZIP