BGA427
Aug-02-2001
1
in SIEGET 25-Technologie
Si-MMIC-Amplifier
VPS05605
4
2
1
3
Cascadable 50
-gain block
Unconditionally stable
Gain |S
21
|
2
= 18.5 dB at 1.8 GHz (Appl.1)
gain |S
21
|
2
= 22 dB at 1.8 GHz (Appl.2)
IP
3out
= +7 dBm at 1.8 GHz (V
D
=3V, I
D
=9.4mA)
Noise figure NF = 2.2 dB at 1.8 GHz
Typical device voltage V
D
= 2 V to 5 V
Reverse isolation
35 dB (Appl.2)
EHA07378
V
2
1
IN
OUT
+
4
3
GND
Circuit Diagram
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BGA427
BMs
1, IN
2, GND 3, +V
4, Out
SOT343
Maximum Ratings
Parameter
Symbol
Value
Unit
Device current
I
D
25
mA
Device voltage
V
D
,+V
6
V
Total power dissipation
T
S
= 120 C
P
tot
150
mW
RF input power
P
RFin
-10
dBm
Junction temperature
T
j
150
C
Ambient temperature range
T
A
-65 ... 150
Storage temperature range
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
295
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
BGA427
Aug-02-2001
2
Electrical Characteristics at T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Unit
Values
typ.
max.
min.
AC characteristics V
D
= 3 V, Z
o
= 50
, Testfixture Appl.1
|S
21
|
2
-
-
-
Insertion power gain
f
= 0.1 GHz
f
= 1 GHz
f
= 1.8 GHz
27
22
18.5
-
-
-
dB
Reverse isolation
f
= 1.8 GHz
S12
-
22
-
Noise figure
f
= 0.1 GHz
f
= 1 GHz
f
= 1.8 GHz
-
-
-
-
-
-
1.9
2
2.2
NF
Intercept point at the output
f
= 1.8 GHz
IP
3out
-
+ 7
-
dBm
Return loss input
f
= 1.8 GHz
RL
in
-
>12
-
dB
Return loss output
f
= 1.8 GHz
RL
out
-
>9
-
Typical configuration
Appl.2
Appl.1
EHA07379
100 pF
100 pF
1 nF
RF OUT
RF IN
GND
+V
BGA 427
EHA07380
2.2 pF
100 pF
RF IN
100 pF
GND
RF OUT
100 nH
10 nF
100 pF
+V
BGA 427
Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device
to provide a low impedance path (appl.1).
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground.
BGA427
Aug-02-2001
3
S-Parameters at T
A
= 25 C, (Testfixture, Appl.1)
f
S
11
S
21
S
12
S
22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
V
D
= 3V, Z
o
= 50
0.0022
0.0046
0.0104
0.0169
0.0194
0.0225
0.0385
0.0479
0.0517
0.0549
0.0709
0.0892
50.7
71.8
83.8
94.8
97.3
98.3
99.7
99.3
98.9
98.8
97.1
96.9
0.1
0.2
0.5
0.8
0.9
1
1.5
1.8
1.9
2
2.5
3
-38.3
-16
-20.8
-56.9
-69.1
-80.6
-133.5
-156.1
-162.8
-167.7
172.8
153.3
164.9
158.9
135.2
115.4
109.4
104
84.9
77
74.7
72.3
63
55
24.821
24.606
22.236
18.258
17.152
15.786
10.923
9.029
8.486
8.015
6.259
5.103
0.1382
0.1179
0.1697
0.1824
0.1782
0.176
0.1827
0.1969
0.2021
0.2116
0.2437
0.258
0.6435
0.6278
0.54
0.4453
0.4326
0.4129
0.3852
0.3917
0.3946
0.3991
0.4202
0.4477
174.8
166.9
147.3
140.2
139.4
138.1
139.6
139.3
138.8
138.3
134.6
131
Spice-model BGA 427
EHA07381
3
R
R
1
P1
C
P2
C
1
C
R
2
P3
C
C
P4
P5
C
R
4
11
14
13
T2
12
C'-E'-
including parasitics
Diode
OUT
BGA 427-chip
IN
GND
+V
T1
T1
T501
T2
T501
R
1
14.5k
R
2
280
R
3
2.4k
R
4
170
C
1
2.3pF
C
P1
0.2pF
0.2pF
C
P2
C
P3
0.6pF
C
P4
0.1pF
C
P5
0.1pF
C'-E'-diode T1
BGA427
Aug-02-2001
4
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
IS =
0.21024
fA
V
39.251
VAF =
NE =
1.7763
-
V
VAR =
34.368
NC =
1.3152
-
RBM =
1.3491
CJE =
3.7265
fF
ps
4.5899
TF =
ITF =
1.3364
mA
V
0.99532
VJC =
TR =
1.4935
ns
-
MJS =
0
XTI =
3
-
NF =
1.0405
-
ISE =
fA
15.761
0.96647
-
NR =
ISC =
0.037223
fA
0.21215
A
IRB =
RC =
0.12691
0.37747
-
MJE =
VTF =
V
0.19762
96.941
fF
CJC =
XCJC =
0.08161
-
0.75
V
VJS =
EG =
1.11
eV
300
K
TNOM
BF =
83.23
-
A
0.16493
IKF =
BR =
10.526
-
A
IKR =
0.25052
RB =
15
RE =
1.9289
VJE =
0.70367
V
-
XTF =
0.3641
PTF =
0
deg
-
0.48652
MJC =
CJS =
0
fF
-
XTB =
0
FC =
0.99469
-
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
RS =
20
IS =
2
fA
-
1.02
N =
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
L
BI
=
0.36
nH
L
BO
=
0.4
nH
L
EI
=
0.3
nH
L
EO
=
0.15
nH
L
CI
=
0.36
nH
L
CO
=
0.4
nH
C
BE
=
95
fF
C
CB
=
6
fF
C
CE
=
132
fF
C
1
=
28
fF
C
2
=
88
fF
C
3
=
8
fF
L
1
=
0.6
nH
L
2
=
0.4
nH
EHA07382
L
BI
1
C
BE
C
BO
L
EI
L
L
EO
CB
C
CI
L
C
3
CO
L
CE
C
Chip
11
13
12
C'-E'-
IN
Diode
C
2
2
L
OUT
L
1
14
+V
GND
BGA 427
Valid up to 3GHz
Extracted on behalf of Infineon Technologies AG by:
Institut fr Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
BGA427
Aug-02-2001
5
Insertion power gain |S
21
|
2
= f (f)
V
D
, I
D
= parameter
10
-1
10
0
10
1
GHz
f
0
5
10
15
20
25
dB
35
|
S
21
|
2
V
D
=5V, I
D
=17.5mA
V
D
=4V, I
D
=13.3mA
V
D
=3V, I
D
=9.5mA
V
D
=2V, I
D
=5.2mA
Noise figure NF = f (f)
V
D
,I
D
= parameter
10
-1
10
0
10
1
GHz
f
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
dB
5.0
NF
V
D
=5V, I
D
=17.5mA
V
D
=3V, I
D
=9.5mA
Intercept point at the output
IP
3out
= f (f)
V
D
,I
D
= parameter
10
-1
10
0
10
1
GHz
f
0
5
10
15
dBm
25
IP
3out
V
D
=5V, I
D
=17.5mA
V
D
=4V, I
D
=13.3mA
V
D
=3V, I
D
=9.5mA
V
D
=2V, I
D
=5.2mA
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