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Электронный компонент: BGA428

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BGA428
BGA428 High Gain, Low Noise
Amplifier
MMIC
N e v e r s t o p t h i n k i n g .
Wireless
Silicon Discretes
BGA428, March 2002
Edition 2002-03-26
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 2002
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted charac-
teristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infi-
neon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
BGA428
Data sheet
Revision History:
2002-03-26
Previous Version:
2000-11-15
Page
Subjects (major changes since last revision)
4
dot size for pin 1 package marking increased
Data sheet
4
2002-03-26
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Marking
Chip
BGA428
SOT363
PGs
T0527
BGA428 High Gain, Low Noise Amplifier
BGA428
VPS05604
6
3
1
5
4
2
Features
 High gain, G
MA
=20dB at 1.8GHz
Low noise figure, NF=1.4dB at 1.8GHz
Prematched
Ideal for GSM, DCS1800, PCS1900
Open collector output
Typical supply voltage: 2.4-3V
SIEGET
-45 technology
EHA07193
1 2 3
4
5
6
PGs
Direction of Unreeling
Top View
Marking on SOT-363 package
(for example PGs)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
Tape loading orientation
BGA428
Data sheet
5
2002-03-26
Notes:
All Voltages refer to GND-Node
1)
Ts is measured on the ground lead at the soldering point
2)
Valid for a) Z
L
=50
and Z
S
=50
,=V
CC
=2.7V, V
OUT
=2.7V, V
GS
=0.0V, GND=0.0V
and b) Z
L
=50
and Z
S
=50
,=V
CC
=0.0V, V
OUT
=0.0V, V
GS
=2.7V, GND=0.0V
3)
I
tot
= Current into OUT + Current into VCC
Maximum Ratings
Parameter
Symbol
Value
Unit
Device voltage
V
CC
4
V
Total Device Current
3)
I
tot
12
mA
Voltage at pin Out
V
Out
4
V
Current into pin In
I
IN
0.5
mA
Voltage at pin GS
V
GS
3.5
V
Total power dissipation, Ts < 125C
1)
P
tot
50
mW
Junction temperature
T
j
150
C
Operating temperature range
T
OP
-40 ..+85
C
Storage temperature range
T
STG
-65 ... +150
C
Thermal resistance: junction-soldering point
R
th JS
220
K/W
Input power
2)
P
IN
8
dBm
Electrical Characteristics at T
A
=25C (measured in test circuit specified in fig. 1)
V
CC
=2.7V, Frequency=1.8GHz, unless otherwise specified
Parameter
Symbol
min.
typ.
max.
Unit
Maximum available power gain
G
MA
20
dB
Noise figure (Z
S
=50
)
NF
1.4
dB
Input power at 1dB gain compression
P
-1dB
-19
dBm
Input third order intercept point
IIP
3
-9
dBm
Total device current
I
tot
8.2
mA
Insertion loss in gain-step-mode
Vcc=0.0V, V
CTRL
=2.7V, R
CTRL
=3k
L
GS
13.5
dB