S e c u r e M o b i l e S o l u t i o n s
S i l i c o n D i s c r e t e s
D a t a s h e e t , B G A 6 1 2 , N o v . 2 0 0 3
N e v e r s t o p t h i n k i n g .
B G A 6 1 2
S i l i c o n G e r m a n i u m
B r o a d b a n d M M I C A m p l i f i e r
MMIC
Edition 2003-11-04
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 2003.
All Rights Reserved.
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Terms of delivery and rights to technical change reserved.
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circuits, descriptions and charts stated herein.
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Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infin-
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BGA612
Data sheet
Revision History:
2003-11-04
Previous Version:
2002-05-27
Page
Subjects (major changes since last revision)
Preliminary status removed
Data sheet
4
2003-11-04
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Marking
Chip
BGA612
SOT343
BNs
T0545
Silicon Germanium
Broadband MMIC Amplifier
BGA612
VPS05605
4
2
1
3
GND, 2,4
IN, 1
Out, 3
Features
Cascadable 50
-gain block
3 dB-bandwidth: DC to 2.8 GHz with
17.0 dB typical gain at 1.0 GHz
Compression point P
-1dB
= 7 dBm at 2.0 GHz
Noise figure F
50
= 2.35 dB at 2.0 GHz
Absolute stable
70 GHz f
T
- Silicon Germanium technology
Applications
Driver amplifier for GSM/PCS/CDMA/UMTS
Broadband amplifier for SAT-TV & LNBs
Broadband amplifier for CATV
Description
The BGA612 is a broadband matched,
general purpose MMIC amplifier in a
Darlington configuration. It is optimized
for a typical supply current of 20mA.
The BGA612 is based on Infineon
Technologies' B7HF Silicon Germanium
technology.
BGA612
Data sheet
5
2003-11-04
Maximum Ratings
Notes:
All Voltages refer to GND-Node
1)
Valid for Z
S
=Z
L
=5
0, V
CC
=5V, R
Bias
=135
2)
T
S
is measured on the ground lead at the soldering point
Parameter
Symbol
Value
Unit
Device voltage
V
D
2.8
V
Device current
I
D
80
mA
Current into pin In
I
In
0.7
mA
Input power
1)
P
In
10
dBm
Total power dissipation, T
S
< 105C
2)
P
tot
225
mW
Junction temperature
T
j
150
C
Ambient temperature range
T
A
-65 ... +150
C
Storage temperature range
T
STG
-65 ... +150
C
Thermal resistance: junction-soldering point
R
th JS
200
K/W
Electrical Characteristics at T
A
=25C (measured in test circuit specified in fig. 1)
V
CC
=5V, R
Bias
=135
, Frequency=2GHz, unless otherwise specified
Parameter
Symbol
min.
typ.
max.
Unit
Insertion power gain
f = 0.1GHz
f = 1.0GHz
f = 2.0GHz
|S
21
|
2
-
-
-
17.5
17.0
15.8
-
-
-
dB
Noise Figure (Z
S
=50
)
f = 0.1GHz
f = 1.0GHz
f = 2.0GHz
F
50
-
-
-
1.95
2.25
2.35
-
-
-
dB
Output Power at 1dB Gain Compression
P
-1dB
-
7
-
dBm
Output Third Order Intercept Point
OIP
3
-
17
-
dBm
Input Return Loss
RL
In
-
18
-
dB
Output Return Loss
RL
Out
-
21
-
dB
Total Device Current
I
D
-
20
-
mA
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