2002-01-22
Page 1
Preliminary data
BSO211P
OptiMOS
-P Small-Signal-Transistor
Product Summary
V
DS
-20
V
R
DS(on)
67
m
I
D
-4.7
A
Feature
Dual P-Channel
Enhancement mode
Super Logic Level (2.5 V rated)
150C operating temperature
Avalanche rated
dv/dt rated
SIS00070
G2
4
5
D2
S2
3
6
D2
G1
2
7
D1
S1
1
8
D1
Top View
Type
Package
Ordering Code
BSO211P
SO 8
Q67042-S4064
Maximum Ratings,at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25C
T
A
=70C
I
D
-4.7
-3.8
A
Pulsed drain current
T
A
=25C
I
D puls
-18.8
Avalanche energy, single pulse
I
D
=-4.7 A , V
DD
=-10V, R
GS
=25
E
AS
28
mJ
Reverse diode dv/dt
I
S
=-4.7A, V
DS
=-16V, di/dt=200A/s, T
jmax
=150C
dv/dt
-6
kV/s
Gate source voltage
V
GS
12
V
Power dissipation
T
A
=25C
P
tot
2
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
IEC climatic category; DIN IEC 68-1
55/150/56
2002-01-22
Page 2
Preliminary data
BSO211P
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
R
thJS
-
-
50
K/W
SMD version, device on PCB:
@ min. footprint, t<10s
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
110
62.5
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=-250A
V
(BR)DSS
-20
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=-25A
V
GS(th)
-0.6
-0.9
-1.2
Zero gate voltage drain current
V
DS
=-20V, V
GS
=0, T
j
=25C
V
DS
=-20V, V
GS
=0, T
j
=150C
I
DSS
-
-
-0.1
-10
-1
-100
A
Gate-source leakage current
V
GS
=-12V, V
DS
=0
I
GSS
-
-10
-100
nA
Drain-source on-state resistance
V
GS
=-2.5V, I
D
=-3.7A
R
DS(on)
-
86
110
m
Drain-source on-state resistance
V
GS
=-4.5V, I
D
=-4.7A
R
DS(on)
-
53
67
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air; t
10 sec.
2002-01-22
Page 3
Preliminary data
BSO211P
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*
I
D
*R
DS(on)max
I
D
=-3.8A
6.4
12.8
-
S
Input capacitance
C
iss
V
GS
=0, V
DS
=-15V,
f=1MHz
-
690
920
pF
Output capacitance
C
oss
-
261
391
Reverse transfer capacitance
C
rss
-
214
321
Turn-on delay time
t
d(on)
V
DD
=-10V, V
GS
=-4.5V,
I
D
=-1A, R
G
=6
-
7.8
11.7 ns
Rise time
t
r
-
10.6
16
Turn-off delay time
t
d(off)
-
26.3
39.5
Fall time
t
f
-
23.3
35
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=-15V, I
D
=-4.7A
-
1.35
2
nC
Gate to drain charge
Q
gd
-
5.6
8.1
Gate charge total
Q
g
V
DD
=-15V, I
D
=-4.7A,
V
GS
=0 to -4.5V
-
15.9
23.9
Gate plateau voltage
V
(plateau) V
DD
=-15V, I
D
=-4.7A
-
-1.9
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25C
-
-
-2
A
Inverse diode direct current,
pulsed
I
SM
-
-
-18.8
Inverse diode forward voltage V
SD
V
GS
=0, |IF| = |ID|
-
-0.93
-1.4
V
Reverse recovery time
t
rr
V
R
=-10V, |I
F
|
=
|l
D
|,
di
F
/dt=100A/s
-
24.3
30.4 ns
Reverse recovery charge
Q
rr
-
7.6
9.5
nC
2002-01-22
Page 4
Preliminary data
BSO211P
1 Power dissipation
P
tot
= f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
W
2.2
BSO211P
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: |V
GS
|
4.5 V
0
20
40
60
80
100
120
C
160
T
A
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
A
-5.5
BSO211P
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-2
-10
-1
-10
0
-10
1
-10
2
-10
A
BSO211P
I
D
R
DS
(o
n)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 s
tp = 41.0s
4 Transient thermal impedance
Z
thJS
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSO211P
Z
thJS
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2002-01-22
Page 5
Preliminary data
BSO211P
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25C
parameter: t
p
= 80 s
0
1
2
3
4
5
6
7
8
V
10
- V
DS
0
5
10
15
20
25
30
A
40
-
I
D
Vgs = -2.5V
Vgs = -3V
Vgs = -3.5V
Vgs = -4V
Vgs = -4.5V
Vgs = -5V
Vgs = -6V
Vgs = -7V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0
5
10
15
20
25
30
A
40
- I
D
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.1
R
DS
(
on)
Vgs = -2.5V
Vgs = -3V
Vgs= - 3.5V
Vgs= - 4V
Vgs = - 4.5V
Vgs = - 5V
Vgs= - 6V
Vgs = - 7V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); |V
DS
|
2 x |I
D
| x R
DS(on)max
parameter: t
p
= 80 s
0
0.5
1
1.5
2
V
3
- V
GS
0
2
4
6
8
10
12
14
16
A
20
-
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25C
parameter: tp = 80 s
0
2
4
6
8
10
12
14
16
A
20
- I
D
0
2
4
6
8
10
12
14
16
S
20
gfs
2002-01-22
Page 6
Preliminary data
BSO211P
9 Drain-source on-resistance
R
DS(on)
= f(Tj)
parameter: I
D
= -4.7 A, V
GS
= -4.5 V
-60
-20
20
60
100
C
160
T
j
30
40
50
60
70
80
m
100
R
DS(on)
typ.
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (Tj)
parameter: V
GS
= V
DS
-60
-20
20
60
100
C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
V
1.6
-
V
GS(th)
2%
typ.
98%
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: Tj , t
p
= 80 s
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4
V
-3
V
SD
-1
-10
0
-10
1
-10
2
-10
A
BSO211P
I
F
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz
0
5
10
V
20
- V
DS
2
10
3
10
pF
C
Crss
Coss
Ciss
2002-01-22
Page 7
Preliminary data
BSO211P
13 Typ. avalanche energy
E
AS
= f (T
j
), par.: I
D
= -4.7 A
V
DD
= -10 V, R
GS
= 25
25
50
75
100
C
150
T
j
0
5
10
15
20
mJ
30
E
AS
14 Typ. gate charge
|V
GS
| = f (Q
Gate
)
parameter: I
D
= -4.7 A pulsed
0
4
8
12
16
nC
22
|QGate|
0
1
2
3
4
5
6
7
8
9
10
V
12
-
V
GS
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
15 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60
-20
20
60
100
C
180
T
j
-18
-18.5
-19
-19.5
-20
-20.5
-21
-21.5
-22
-22.5
-23
-23.5
V
-24.5
BSO211P
V
(BR)DSS
2002-01-22
Page 8
Preliminary data
BSO211P
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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