2003-02-26
Page 1
Rev. 1.0
BSP123
SIPMOS
Small-Signal-Transistor
Product Summary
V
DS
100
V
R
DS(on)
6
I
D
0.37
A
Feature
N-Channel
Enhancement mode
Logic Level
dv/dt rated
SOT223
Marking
BSP123
Type
Package
Ordering Code
Tape and Reel Information
BSP123
SOT223
Q67000-S306
E6327: 1000 pcs/reel
Maximum Ratings, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25C
T
A
=70C
I
D
0.37
0.3
A
Pulsed drain current
T
A
=25C
I
D puls
1.48
Reverse diode dv/dt
I
S
=0.37A, V
DS
=80V, di/dt=200A/s, T
jmax
=150C
dv/dt
6
kV/s
Gate source voltage
V
GS
20
V
ESD Sensitivity (HBM) as per MIL-STD 883
Class 1
Power dissipation
T
A
=25C
P
tot
1.79
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
IEC climatic category; DIN IEC 68-1
55/150/56
2003-02-26
Page 2
Rev. 1.0
BSP123
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
R
thJS
-
15
25
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
100
51
115
70
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=250A
V
(BR)DSS
100
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=50A
V
GS(th)
0.8
1.4
1.8
Zero gate voltage drain current
V
DS
=100V, V
GS
=0, T
j
=25C
V
DS
=100V, V
GS
=0, T
j
=150C
I
DSS
-
-
-
-
0.01
5
A
Gate-source leakage current
V
GS
=20V, V
DS
=0
I
GSS
-
-
10
nA
Drain-source on-state resistance
V
GS
=2.8V, I
D
=15mA
R
DS(on)
-
14
30
Drain-source on-state resistance
V
GS
=4.5V, I
D
=0.3A
R
DS(on)
-
4.8
10
Drain-source on-state resistance
V
GS
=10V, I
D
=0.37A
R
DS(on)
-
3.5
6
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (single layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2003-02-26
Page 3
Rev. 1.0
BSP123
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=0.3A
0.13
0.27
-
S
Input capacitance
C
iss
V
GS
=0, V
DS
=25V,
f=1MHz
-
56
70
pF
Output capacitance
C
oss
-
9
11.3
Reverse transfer capacitance C
rss
-
3.5
4.4
Turn-on delay time
t
d(on)
V
DD
=50V, V
GS
=10V,
I
D
=0.37A, R
G
=6
-
3.3
5
ns
Rise time
t
r
-
3.2
4.8
Turn-off delay time
t
d(off)
-
8.7
13
Fall time
t
f
-
9.4
14
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=80V, I
D
=0.37A
-
0.09
0.13 nC
Gate to drain charge
Q
gd
-
0.8
1.2
Gate charge total
Q
g
V
DD
=80V, I
D
=0.37A,
V
GS
=0 to 10V
-
1.6
2.4
Gate plateau voltage
V
(plateau) V
DD
=80V, I
D
= 0.37 A
-
3.61
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25C
-
-
0.37 A
Inv. diode direct current, pulsedI
SM
-
-
1.48
Inverse diode forward voltage V
SD
V
GS
=0, I
F
= I
S
-
0.9
1.2
V
Reverse recovery time
t
rr
V
R
=50V, I
F=
l
S
,
di
F
/dt=100A/s
-
52.7
79
ns
Reverse recovery charge
Q
rr
-
17.8
27
nC
2003-02-26
Page 4
Rev. 1.0
BSP123
1 Power dissipation
P
tot
= f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9
BSP123
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: V
GS
10 V
0
20
40
60
80
100
120
C
160
T
A
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
A
0.4
BSP123
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
A
BSP123
I
D
R
DS(on)
=
V
DS
/
I
D
DC
tp = 21.0ms
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
3
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
BSP123
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2003-02-26
Page 5
Rev. 1.0
BSP123
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: T
j
= 25 C, V
GS
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
DS
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
A
0.7
I
D
10V
5V
4.5V
4.1V
3.9V
3.7V
3.5V
3.1V
2.9V
2.3V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: T
j
= 25 C, V
GS
0
0.1
0.2
0.3
0.4
0.5
A
0.7
I
D
0
2
4
6
8
10
12
14
16
20
R
DS(on)
2.3V
2.9V
3.1V
3.5V
3.7V
3.9V
4.1V
4.5V
5.0V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: T
j
= 25 C
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
GS
0
0.1
0.2
0.3
0.4
0.5
A
0.7
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: T
j
= 25 C
0
0.1
0.2
0.3
0.4
0.5
A
0.7
I
D
0
0.05
0.1
0.15
0.2
0.25
0.3
S
0.4
g
fs
2003-02-26
Page 6
Rev. 1.0
BSP123
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 0.37 A, V
GS
= 10 V
-60
-20
20
60
100
C
180
T
j
0
2
4
6
8
10
12
14
16
18
20
24
BSP123
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (Tj)
parameter: V
GS
= V
DS;
I
D
=50A
-60
-20
20
60
100
C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
2.2
V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz, T
j
= 25 C
0
4
8
12
16
20
24
28
V
36
V
DS
0
10
1
10
2
10
3
10
pF
C
C
rss
C
iss
C
oss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: Tj
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-2
10
-1
10
0
10
1
10
A
BSP123
I
F
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)
2003-02-26
Page 7
Rev. 1.0
BSP123
13 Typ. gate charge
V
GS
= f (Q
G
); parameter: V
DS
,
I
D
= 0.37 A pulsed, T
j
= 25 C
0
0.4
0.8
1.2
1.6
2
nC
2.8
Q
G
0
2
4
6
8
10
12
V
16
BSP123
V
GS
0.2 V
DS max
0.5 V
DS max
0.8 V
DS max
14 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60
-20
20
60
100
C
180
T
j
90
92
94
96
98
100
102
104
106
108
110
112
114
V
120
BSP123
V
(BR)DSS
2003-02-26
Page 8
Rev. 1.0
BSP123
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
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