BSP50 ... BSP52
1
Nov-30-2001
NPN Silicon Darlington Transistors
High collector current
Low collector-emitter saturation voltage
Complementary types: BSP60 ... BSP62 (PNP)
VPS05163
1
2
3
4
Type
Marking
Pin Configuration
Package
BSP50
BSP51
BSP52
BSP 50
BSP 51
BSP 52
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Symbol
BSP50
BSP51
BSP52
Unit
Collector-emitter voltage
V
CEO
45
60
80
V
Collector-base voltage
V
CBO
60
80
90
Emitter-base voltage
V
EBO
5
5
5
DC collector current
I
C
1
A
Peak collector current
I
CM
2
Base current
mA
100
I
B
Total power dissipation
, T
S
= 124 C
P
tot
1.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
17
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BSP50 ... BSP52
2
Nov-30-2001
Electrical Characteristics
at T
A
= 25C, unless othertwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0
BSP50
BSP51
BSP52
V
(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 100 A, I
E
= 0
BSP50
BSP51
BSP52
V
(BR)CBO
60
80
90
-
-
-
-
-
-
Emitter-base breakdown voltage
I
E
= 100 A, I
C
= 0
V
(BR)EBO
5
-
-
Collector-emitter cutoff current
V
CE
= V
CEOmax
, V
BE
= 0
I
CES
-
-
10
A
Emitter cutoff current
V
EB
= 4 V, I
C
= 0
I
EBO
-
-
10
DC current gain 1)
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
h
FE
1000
2000
-
-
-
-
-
Collector-emitter saturation voltage1)
I
C
= 500 mA, I
B
= 0.5 mA
I
C
= 1 A, I
B
= 1 mA
V
CEsat
-
-
-
-
1.3
1.8
V
Base-emitter saturation voltage 1)
I
C
= 500 mA, I
B
= 0.5 mA
I
C
= 1 A, I
B
= 1 mA
V
BEsat
-
-
-
-
1.9
2.2
AC Characteristics
Transition frequency
I
C
= 100 mA, V
CE
= 5 V, f = 100 MHz
f
T
-
200
-
MHz
Turn-on time
I
C
= 500 mA, I
B1
= I
B2
= 0.5mA
t
(on)
-
400
-
ns
Turn-off time
I
C
= 500 mA, I
B1
= I
B2
= 0.5mA
t
(off)
-
1500
-
1) Pulse test: t
300
s, D = 2%
PDF 
ZIP
