Mini PROFET BSP 550
Semiconductor Group
Page 1 of 7
20.06.96
MiniPROFET
High-side switch
Short-circuit protection
Input protection
Overtemperature protection with hysteresis
Overload protection
Overvoltage protection
Switching inductive load
Clamp of negative output voltage with inductive loads
Undervoltage shutdown
Maximum current internally limited
Electrostatic discharge (ESD) protection
Reverse battery protection
1)
Package: SOT 223
Type
Ordering code
BSP 550
Q67000-S311
Maximum Ratings
Parameter
Symbol
Values
Unit
Supply voltage range
V
bb
-0.3...48
V
Load current
self-limited
I
L
I
L(SC)
A
Maximum input voltage
2)
V
IN
-5.0...
V
bb
V
Maximum input current
I
IN
5
mA
Inductive load switch-off energy dissipation
single pulse
I
L
= 1.0A ,
T
A
= 85C
E
AS
0.3
J
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+125
-55 ...+150
C
Max. power dissipation (DC)
3)
T
A
= 25 C
P
tot
1.4
W
Electrostatic discharge capability (ESD)
4)
V
ESD
1
kV
Thermal resistance
chip - soldering point:
chip - ambient
3)
R
thJS
R
thJA
7
70
K/W
IN
3
R
in
+ Vbb
Signal GND
ESD
MINI-PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
Load GND
Load
V
Logic
Overvoltage
protection
ESD-
Diode
1) With resistor R
GND
=150
in GND connection, resistor in series with IN connections reverse load current
limited by connected load.
2) At V
IN
> V
bb
, the input current is not allowed to exceed
5 mA.
3) BSP 550 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for V
bb
connection
4) HBM according to MIL-STD 883D, Methode 3015.7
1
2
3
4
Pins
1
2
3
4
OUT
GND
IN
V
bb
BSP 550
Semiconductor Group
Page 2
20.06.96
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb = 24V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1)
I
L
= 1.0 A,
V
in
= high
T
j
= 25C
T
j
= 125C
R
ON
--
--
0.16
--
0.2
0.38
Nominal load current (pin 4 to 1)
5)
ISO Standard:
V
ON
=
V
bb
-
V
OUT
= 0.5 V
T
S
= 85 C
I
L(ISO)
1.4
--
--
A
Turn-on time
to 90%
V
OUT
Turn-off time
to 10%
V
OUT
R
L
= 24
t
on
t
off
--
--
60
90
100
150
s
Slew rate on
10 to 30%
V
OUT
,
R
L
= 24
d
V /dt
on
--
2
4
V/
s
Slew rate off
70 to 40%
V
OUT
,
R
L
= 24
-d
V/dt
off
--
2
4
V/
s
Input
Allowable input voltage range, (pin 3 to 2)
V
IN
-3.0
--
V
bb
V
Input turn-on threshold voltage
Vbb = 18...30V
T
j
= -25...+125C
V
IN(T+)
--
--
3.0
V
Input turn-off threshold voltage
Vbb = 18...30V
T
j
= -25...+125C
V
IN(T-)
1.82
--
--
V
Input threshold hysteresis
V
IN(T)
--
0.1
--
V
Off state input current (pin 3)
V
IN(off)
= 1.82 V
T
j
= -25...+125C
I
IN(off)
20
--
--
A
On state input current (pin 3)
V
IN(on)
= 3.0 V to
V
bb
T
j
= -25...+125C
I
IN(on)
--
--
110
A
Input resistance
T
j
= -25...+125C
R
IN
1.5
2.8
3.5
k
5
) I
L(ISO)
is limited by the current limitation, see I
L(SC)
BSP 550
Parameter and Conditions
Symbol
Values
Unit
at
T
j
= 25 C,
V
bb = 24V unless otherwise specified
min
typ
max
Semiconductor Group
Page 3
20.06.96
Operating Parameters
Operating voltage
T
j
=-25...+125C
V
bb(on)
12
40
V
Undervoltage shutdown
T
j
=-25...+125C
V
bb(under)
7
--
10.5
V
Undervoltage restart
T
j
=-25...+125C:
V
bb(u rst)
--
--
11
V
Undervoltage hysteresis
V
bb(under)
--
0.4
--
V
Standby current (pin 4),
V
in
= low
T
j
=-25...+100C
T
j
=125C
6)
I
bb(off)
--
10
25
50
A
Operating current (pin 2),
V
in
= high
T
j
=-25...+125C
I
GND
--
1
1.6
mA
leakage current (pin 1)
V
in
= low
T
j
=-25...+125C
I
L(off)
--
--
2
A
Protection Functions
Current limit (pin 4 to 1)
T
j
= 25C
T
j
= -25...+125C
I
L(SC)
1.4
1.4
2.5
--
4.0
4.8
A
Overvoltage protection
I
bb
=4mA
T
j
=-25...+125C
V
bb(AZ)
48
--
--
V
Output clamp (ind. load switch off)
V
OUT
=
V
bb
-
V
ON(CL),
I
bb
= 4mA
V
ON(CL)
--
72
--
V
Thermal overload trip temperature
T
jt
135
150
--
C
Thermal hysteresis
T
jt
--
10
--
K
Inductive load switch-off energy dissipation
7)
T
j Start
= 85 C, single pulse,
I
L
= 1.0 A,
V
bb
= 12 V
E
AS
--
--
0.3
J
Reverse Battery
Reverse battery voltage
8
)
-V
bb
30
V
Continious reverse drain current
T
A
= 25C
-I
S
--
--
1
A
Drain-Source diode voltage
I
F
= 1 A,
V
in
= low
V
OUT
>
V
bb
-V
ON
--
--
1.2
V
6) increase of standby current at T
j
= 125C caused by temperature sense current
7) while demagnetizing load inductance, dissipated energy is E
AS
=
(VON(CL) * iL(t) dt,
approx.
E
AS
= 1/2 * L * I
2
L
* (
VON(CL)
VON(CL)-Vbb
)
8) Requires 150
resistor in GND connection. Reverse load current (through intrinsic drain-source diode)
is normally limited by the connected load.
BSP 550
Semiconductor Group
Page 4
20.06.96
Max allowable power dissipation
Ptot = f (TA,TSP)
Ptot [W]
0
2
4
6
8
1 0
1 2
1 4
1 6
0
2 5
5 0
7 5
1 0 0
1 2 5
T
T
S P
A
TA, TSP[C]
On state resistance (Vbb-pin to OUT pin)
RON = f (Tj);Vbb = 24 V;IL = 1.0 A
RON [
]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
-50
-25
0
25
50
75
100
125
98%
T
j
[C]
Current limit characteristic
IL(SC) = f (Von), (Von see testcircuit)
IL(SC) [A]
0
0 , 5
1
1 , 5
2
2 , 5
3
3 , 5
0
5
1 0
1 5
2 0
2 5
1 2 5 C
2 5 C
- 2 5 C
V
on
[V]
Typ. input current
IIN = f(VIN); Vbb = 24 V
IIN [
A]
0
10
20
30
40
50
60
70
80
90
0
5
10
15
20
25
125C
25C
-25C
V
IN
[V]
BSP 550
Semiconductor Group
Page 5
20.06.96
Typ. overload current
IL(lim) = f (t), Vbb=24V, no heatsink, Param.:Tjstart
IL(lim) [A]
0
0.5
1
1.5
2
2.5
3
-2
0
2
4
6
8
10 12 14 16 18
125C
-25C
t [ms]
Short circuit current
IL(SC) = f (Tj);Vbb = 30 V;
IL(SC) [
]
0
0,5
1
1,5
2
2,5
3
-25
0
25
50
75
100
125
Tj [C]
Typ. operating current
IGND = f (Tj), Vbb=30V, VIN=high
IGND [mA]
0
0.2
0.4
0.6
0.8
1
-25
0
25
50
75
100
125
Tj [C]
Typ. standby current
Ibb(off) = f(Tj); Vbb = 30 V, VIN = low
Ibb(off) [
A]
0
1
2
3
4
5
6
7
-25
0
25
50
75
100
125
150
Tj [C]
BSP 550
Semiconductor Group
Page 6
20.06.96
Typ. input turn on voltage threshold
VIN(T+) = f (Tj)
VIN(T+) [V]
0
0.5
1
1.5
2
2.5
3
-25
0
25
50
75
100
125
30V
18V
Tj [C]
Typ. on-state resistance (Vbb-Pin to OUT-Pin)
RON = f (Vbb); IL = 1.0A, Tj = 25 C;
RON [m
]
0
20
40
60
80
100
120
140
160
0
5
10
15
20
25
30
35
40
45
Vbb [V]
Test circuit
BSP 550
Semiconductor Group
Page 7
20.06.96
Package:
all dimensions in mm.
SOT 223/4:
Edition 7.97
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstrae 73,
81541 Mnchen
Siemens AG 1997
All Rights Reserved.
Attention please!
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For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or
the Siemens Companies and Representatives worldwide (see address list).
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question please contact your nearest Siemens Office, Semiconductor Group.
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1
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2
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