2002-11-12
Page 1
BSP88
Rev. 1.0
SIPMOS
Small-Signal-Transistor
Product Summary
V
DS
240
V
R
DS(on)
6
W
I
D
0.35
A
Feature
N-Channel
Enhancement mode
Logic Level
dv/dt rated
SOT-223
VPS05163
1
2
3
4
Marking
BSP88
Type
Package
Ordering Code
Tape and Reel Information
BSP88
SOT-223
Q67000-S070
E6327: 3000 pcs/reel
Maximum Ratings, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25C
T
A
=70C
I
D
0.35
0.28
A
Pulsed drain current
T
A
=25C
I
D puls
1.4
Reverse diode dv/dt
I
S
=0.35A, V
DS
=192V, di/dt=200A/s, T
jmax
=150C
dv/dt
6
kV/s
Gate source voltage
V
GS
20
V
ESD Sensitivity (HBM) as per MIL-STD 883
Class 1
Power dissipation
T
A
=25C
P
tot
1.8
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
IEC climatic category; DIN IEC 68-1
55/150/56
2002-11-12
Page 2
BSP88
Rev. 1.0
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
R
thJS
-
-
25
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
115
70
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=250A
V
(BR)DSS
240
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=108A
V
GS(th)
0.6
1
1.4
Zero gate voltage drain current
V
DS
=240V, V
GS
=0, T
j
=25C
V
DS
=240V, V
GS
=0, T
j
=150C
I
DSS
-
-
-
-
0.1
10
A
Gate-source leakage current
V
GS
=20V, V
DS
=0
I
GSS
-
1
10
nA
Drain-source on-state resistance
V
GS
=2.8V, I
D
=0.014A
R
DS(on)
-
4.9
15
W
Drain-source on-state resistance
V
GS
=4.5V, I
D
=0.32A
R
DS(on)
-
4.6
7.5
Drain-source on-state resistance
V
GS
=10V, I
D
=0.35A
R
DS(on)
-
4
6
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2002-11-12
Page 3
BSP88
Rev. 1.0
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=0.28A
0.19
0.38
-
S
Input capacitance
C
iss
V
GS
=0, V
DS
=25V,
f=1MHz
-
76
95
pF
Output capacitance
C
oss
-
12
15
Reverse transfer capacitance
C
rss
-
6
9
Turn-on delay time
t
d(on)
V
DD
=120V, V
GS
=4.5V,
I
D
=0.35A, R
G
=15
W
-
3.6
5.4
ns
Rise time
t
r
-
3.5
5.2
Turn-off delay time
t
d(off)
-
17.9
26.8
Fall time
t
f
-
18.9
28.3
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=192V, I
D
=0.35A
-
0.2
0.3
nC
Gate to drain charge
Q
gd
-
2
3
Gate charge total
Q
g
V
DD
=192V, I
D
=0.35A,
V
GS
=0 to 10V
-
4.5
6.8
Gate plateau voltage
V
(plateau) V
DD
=192V, I
D
= 0.35 A
-
2.7
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25C
-
-
0.35 A
Inv. diode direct current, pulsed I
SM
-
-
1.4
Inverse diode forward voltage V
SD
V
GS
=0, I
F
= I
S
-
0.86
1.2
V
Reverse recovery time
t
rr
V
R
=120V, I
F=
l
S
,
di
F
/dt=100A/s
-
66
82
ns
Reverse recovery charge
Q
rr
-
119
149
nC
2002-11-12
Page 4
BSP88
Rev. 1.0
1 Power dissipation
P
tot
= f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9
BSP88
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: V
GS
10 V
0
20
40
60
80
100
120
C
160
T
A
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
A
0.38
BSP88
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 C
10
0
10
1
10
2
10
3
V
V
DS
-3
10
-2
10
-1
10
0
10
1
10
A
BSP88
I
D
R
DS
(o
n)
=
V
DS
/
I
D
DC
10 ms
1 ms
tp = 160.0s
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP88
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2002-11-12
Page 5
BSP88
Rev. 1.0
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: T
j
= 25 C, V
GS
0
0.5
1
1.5
2
2.5
3
V
4
V
DS
0
0.08
0.16
0.24
0.32
0.4
0.48
A
0.64
I
D
2.6V
3.2V
3.4V
3.8V
4V
4.4V
5V
6V
7V
10V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: T
j
= 25 C, V
GS
0
0.08 0.16 0.24 0.32
0.4
0.48
A
0.64
I
D
0
1
2
3
4
5
6
7
W
9
R
DS(on)
2.6V
3.2V
3.4V
3.8V
4.4V
5V
6V
7V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: T
j
= 25 C
0
0.5
1
1.5
2
2.5
V
3.5
V
GS
0
0.08
0.16
0.24
0.32
0.4
0.48
A
0.64
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: T
j
= 25 C
0
0.08 0.16 0.24 0.32
0.4
0.48
A
0.64
I
D
0
0.1
0.2
0.3
0.4
S
0.6
g
fs
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