2001-12-05
Page 1
Preliminary data
BSS 209PW
OptiMOS
-P Small-Signal-Transistor
Product Summary
V
DS
-20
V
R
DS(on)
550
m
I
D
-0.58
A
Feature
P-Channel
Enhancement mode
Super Logic Level (2.5 V rated)
150C operating temperature
Avalanche rated
dv/dt rated
SOT-323
1
3
VSO05561
2
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
X3s
Type
Package
Ordering Code
BSS 209PW
SOT-323
Q67042-S4074
Maximum Ratings,at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25C
T
A
=70C
I
D
-0.58
-0.46
A
Pulsed drain current
T
A
=25C
I
D puls
-2.3
Avalanche energy, single pulse
I
D
=-0.58 A , V
DD
=-10V, R
GS
=25
E
AS
3.5
mJ
Reverse diode dv/dt
I
S
=-0.58A, V
DS
=-16V, di/dt=200A/s, T
jmax
=150C
dv/dt
-6
kV/s
Gate source voltage
V
GS
12
V
Power dissipation
T
A
=25C
P
tot
0.52
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
IEC climatic category; DIN IEC 68-1
55/150/56
2001-12-05
Page 2
Preliminary data
BSS 209PW
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
R
thJS
-
-
120
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
240
160
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=-250A
V
(BR)DSS
-20
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=-3.5A
V
GS(th)
-0.6
-0.9
-1.2
Zero gate voltage drain current
V
DS
=-20V, V
GS
=0, T
j
=25C
V
DS
=-20V, V
GS
=0, T
j
=150C
I
DSS
-
-
-0.1
-10
-1
-100
A
Gate-source leakage current
V
GS
=-12V, V
DS
=0
I
GSS
-
-10
-100
nA
Drain-source on-state resistance
V
GS
=-2.5V, I
D
=-0.46A
R
DS(on)
-
563
900
m
Drain-source on-state resistance
V
GS
=-4.5, I
D
=-0.58A
R
DS(on)
-
369
550
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air; t
10 sec.
2001-12-05
Page 3
Preliminary data
BSS 209PW
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*
I
D
*R
DS(on)max
I
D
=-0.46A
0.87
1.74
-
S
Input capacitance
C
iss
V
GS
=0, V
DS
=-15V,
f=1MHz
-
89.9
-
pF
Output capacitance
C
oss
-
40.1
-
Reverse transfer capacitance
C
rss
-
31.5
-
Turn-on delay time
t
d(on)
V
DD
=-10V, V
GS
=-4.5V,
I
D
=-0.58A, R
G
=6
-
4.4
6.6
ns
Rise time
t
r
-
5.8
8.7
Turn-off delay time
t
d(off)
-
7.6
11.4
Fall time
t
f
-
4.5
6.7
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=-10V, I
D
=-0.58A
-
-0.12
-0.17 nC
Gate to drain charge
Q
gd
-
-0.74
-1.1
Gate charge total
Q
g
V
DD
=-10V, I
D
=-0.58A,
V
GS
=0 to -4.5V
-
-0.92
-1.38
Gate plateau voltage
V
(plateau) V
DD
=-10V, I
D
=-0.58A
-
-1.7
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25C
-
-
-0.5
A
Inverse diode direct current,
pulsed
I
SM
-
-
-2.3
Inverse diode forward voltage V
SD
V
GS
=0, |IF| = |ID|
-
-1.3
-0.88 V
Reverse recovery time
t
rr
V
R
=-10V, |I
F
|
=
|l
D
|,
di
F
/dt=100A/s
-
9
11.2 ns
Reverse recovery charge
Q
rr
-
1.27
1.59 nC
2001-12-05
Page 4
Preliminary data
BSS 209PW
1 Power dissipation
P
tot
= f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
W
0.85
BSS 209PW
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: |V
GS
|
4.5 V
0
20
40
60
80
100
120
C
160
T
A
0
-0.05
-0.1
-0.15
-0.2
-0.25
-0.3
-0.35
-0.4
-0.45
-0.5
-0.55
A
-0.65
BSS 209PW
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-2
-10
-1
-10
0
-10
1
-10
A
BSS 209PW
I
D
R
D
S(
on
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
100 s
tp = 82.0s
4 Transient thermal impedance
Z
thJS
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
BSS 209PW
Z
thJS
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2001-12-05
Page 5
Preliminary data
BSS 209PW
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25C
parameter: t
p
= 80 s
0
1
2
3
4
5
6
7
8
V
10
- V
DS
0
1
2
A
4
-
I
D
Vgs = -1.8V
Vgs = -2.2V
Vgs = -2.5V
Vgs = -2V
Vgs = -2.8V
Vgs = -3.5V
Vgs = -3V
Vgs = -4V
Vgs = -4.5V
Vgs = -7V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 A
2
- I
D
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1
R
DS
(
on)
Vgs = -2.2V
Vgs = -2.5V
Vgs = - 3V
Vgs= - 3.5V
Vgs = - 4V
Vgs = - 4.5V
Vgs= - 5V
Vgs= - 6V
Vgs = - 7V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); |V
DS
|
2 x |I
D
| x R
DS(on)max
parameter: t
p
= 80 s
0
0.5
1
1.5
2
2.5
V
3.5
- V
GS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
A
6
-
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25C
parameter: tp = 80 s
0
1
2
3
4
A
6
- I
D
0
0.5
1
1.5
2
2.5
3
S
4
gfs
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