PROFET BTS 308
Semiconductor Group
Page 1 of 14
2003-Oct-01
Smart Highside Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
1
)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in OFF-state
CMOS compatible input
Loss of ground and loss of V
bb
protection
Electrostatic discharge (ESD) protection
Application
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
Most suitable for inductive loads
Replaces electromechanical relays, fuses and discrete circuits
Fast switching
Not suitable for lamp loads
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Providing embedded protective functions.
+ Vbb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
1
) With external current limit (e.g. resistor R
GND
=150
) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage protection
V
bb(AZ)
60
V
Operating voltage
V
bb(on)
4.7 ... 34 V
On-state resistance
R
ON
300 m
Load current (ISO)
I
L(ISO)
1.3
A
TO-220AB/5
5
Standard
1
5
Straight leads
1
5
SMD
BTS
308
Semiconductor Group
Page 2
2003-Oct-01
Pin Symbol
Function
1 GND
-
Logic
ground
2
IN
I
Input, activates the power switch in case of logical high signal
3 Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5 OUT
(Load, L)
O
Output to the load
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter Symbol
Values
Unit
Supply voltage (overvoltage protection see page 3)
V
bb
60
V
Load current (Short circuit current, see page 4)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC), T
C
25 C
P
tot
50
W
Electrostatic discharge capability (ESD)
IN, ST:
(Human Body Model)
all other pins:
V
ESD
1
tbd (>1)
kV
Input voltage (DC)
V
IN
-10 ... +16
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
I
IN
I
ST
5.0
5.0
mA
Thermal resistance
chip - case:
junction - ambient (free air):
R
thJC
R
thJA
2.5
75
K/W
BTS 308
Semiconductor Group
Page 3
2003-Oct-01
Electrical Characteristics
Parameter and Conditions Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 24 V unless otherwise specified
min typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 0.8 A, V
bb
= 12V
T
j
=25 C:
T
j
=150 C:
R
ON
--
270
540
300
600
m
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V, T
C
= 85 C
I
L(ISO)
1.18 1.3
--
A
Output current (pin
5
) while GND disconnected or
GND pulled up, V
bb
=30 V, V
IN
= 0, see diagram
page 7
I
L(GNDhigh)
-- -- 1
mA
Turn-on time to 90% V
OUT
:
Turn-off time to 10% V
OUT
:
R
L
= 47
, V
bb
= 12V, T
j
=-40...+150C
t
on
t
off
--
--
--
--
50
55
s
Slew rate on, 10 to 30% V
OUT
,
R
L
= 47
, V
bb
= 12V, T
j
=-40...+150C
dV /dt
on
1
--
10
V/
s
Slew rate off, 10 to 30% V
OUT
,
R
L
= 47
, V
bb
= 12V, T
j
=-40...+150C
-dV/dt
off
2
--
15
V/
s
Operating Parameters
Operating voltage
2
)
T
j
=-40...+150C: V
bb(on)
4.7
--
34
V
Operating voltage slew rate
dV
bb
/dt -1
+1
V/
s
Undervoltage shutdown
T
j
=25C:
T
j
=-40...+150C:
V
bb(under)
2.9
2.7
--
--
4.5
4.7
V
Undervoltage restart
T
j
=-40...+150C: V
bb(u rst)
--
--
4.9
V
Undervoltage restart of charge pump
see diagram page 11
T
j
=-40...+150C:
V
bb(ucp)
-- 4.9 7.5
V
Undervoltage hysteresis
V
bb(under)
= V
bb(u rst)
- V
bb(under)
V
bb(under)
-- 0.2 --
V
Overvoltage shutdown
T
j
=-40...+150C: V
bb(over)
34
--
46
V
Overvoltage restart
T
j
=-40...+150C: V
bb(o rst)
34 -- --
V
Overvoltage hysteresis
T
j
=-40...+150C:
V
bb(over)
-- 0.5 --
V
Overvoltage protection
3
)
T
j
=-40...+150C:
I
bb
=10 mA
V
bb(AZ)
59
70
--
V
Standby current (pin 3)
,
V
IN
=0
T
j
=-40...+150C:
I
bb(off)
--
40 50
A
Operating current (Pin 1)
4
)
, V
IN
=5 V
I
GND
-- 2 4
mA
2
)
At supply voltage increase up to V
bb
= 4.9 V typ without charge pump, V
OUT
V
bb
- 2 V
3
)
Meassured without load
.
See also V
ON(CL)
in table of protection functions and circuit diagram page 7.
4
)
Add I
ST
, if I
ST
> 0, add I
IN
, if V
IN
>5.5 V
BTS
308
Parameter and Conditions Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 24 V unless otherwise specified
min typ
max
Semiconductor Group
Page 4
2003-Oct-01
Protection Functions
5)
Initial peak short circuit current limit (pin 3 to 5)
6
)
,
(
max 100
s if V
ON
> V
ON(SC)
)
I
L(SCp)
V
bb
= 12V
T
j
=-40C:
T
j
=25C:
T
j
=+150C:
--
--
2.5
--
5
--
10
--
--
A
Short circuit shutdown delay after input pos. slope
V
ON
> V
ON(SC)
,
T
j
=-40..+150C:
min value valid only, if input "low" time exceeds 60
s
t
d(SC)
15
-- 100
s
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
I
L
= 1 A, T
j
=-40..+150C:
V
ON(CL)
59
67 75
V
Short circuit shutdown detection voltage
(pin 3 to 5)
V
ON(SC)
--
3.5
--
V
Thermal overload trip temperature
T
jt
150 -- --
C
Thermal hysteresis
T
jt
-- 10 --
K
Reverse battery (pin 3 to 1)
7
)
-V
bb
--
--
32
V
Diagnostic Characteristics
Open load detection current
T
j
=-40...+150C:
(included in standby current I
bb(off)
)
I
L(off)
0 --
30
A
Open load detection voltage
T
j
=-40..150C:
V
OUT(OL)
2 3
4
V
5
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
6
) Short circuit current limit for max. duration of t
d(SC) max
=100
s, prior to shutdown
7
) Requires
150
resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is
normally limited by the connected load. Input and Status currents have to be limited (see max. ratings page
2 and circuit page 7).
BTS
308
Parameter and Conditions Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 24 V unless otherwise specified
min typ
max
Semiconductor Group
Page 5
2003-Oct-01
Input and Status Feedback
8
)
Input resistance
see circuit page 6
R
I
--
4 --
k
Input turn-on threshold voltage
T
j
=-40..+150 V
IN(T+)
1.5 --
2.4
V
Input turn-off threshold voltage
T
j
=-40..+150 V
IN(T-)
0.8 -- --
V
Input threshold hysteresis, T
j
=-40..+150C
V
IN(T)
0.2 -- --
V
Off state input current (pin 2), V
IN
= 0.4 V,
T
j
=-40..+150C
I
IN(off)
8
--
30
A
On state input current (pin 2), V
IN
= 3.5 V,
T
j
=-40..+150C
I
IN(on)
10 22 50
A
Delay time for status with open load
after Input neg. slope (see diagram page 11)
t
d(ST OL3)
50 --
400
s
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150C:
t
d(ST SC)
15 50
100
s
Status output (open drain)
Zener limit voltage T
j
=-40...+150C, I
ST
= +50 uA:
ST low voltage T
j
=-40...+150C, I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
6
--
--
0.4
V
8
)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
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