Nov-03-2000
Page 1
HITFET
BTS 333
Smart Lowside Power Switch
Features
Logic Level Input
Input Protection (ESD)
Temperature limitation
adjustable by input voltage
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Analog driving possible
Product Summary
Drain source voltage
V
DS
42
V
On-state resistance
R
DS(on)
18
m
Nominal load current
I
D(ISO)
19
A
Clamping energy
E
AS
2
J
Application
All kinds of resistive, inductive and capacitive loads in switching or linear
applications
C compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Pin
Symbol
Function
1
IN
Input
2
DRAIN
Output to the load
3
SOURCE
Ground
TAB
DRAIN
Output to the load
Nov-03-2000
Page 2
BTS 333
Block Diagram
Gate-Control
ESD
Temperature
Control
Current
limitation +
Short circuit
Protection
Overvoltage-
Protection
M
V
bb
In
Source
Drain
BTS333
Pin 1
Pin 2 and TAB
Pin 3
Nov-03-2000
Page 3
BTS 333
Maximum Ratings at T
j
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Drain source voltage
V
DS
42
V
Drain source voltage for full SCP
SCP Type I, V
IN
10V
SCP Type II, V
IN
7V
V
DS(SC)
36
24
Continuous input current
-0.2V
V
IN
10V
V
IN
< -0.2V or V
IN
> 10V
I
IN
no limit
| I
IN
|
4
mA
Operating temperature
1)
T
j
-40 ...+175
C
Storage temperature
T
stg
-55 ... +150
Power dissipation
T
C
= 85 C
P
tot
100
W
Unclamped single pulse inductive energy
2)
I
D
= 19 A, T
j
= 25 C, V
bb
= 12 V
I
D
= 19 A, T
j
= 150 C, V
bb
= 12 V
E
AS
2
0.5
J
Load dump protection V
LoadDump
3)
= V
A
+ V
S
V
IN
= 0 and 10 V, t
d
= 400 ms, R
I
= 2
,
R
L
= 1
, V
A
= 13.5 V
V
LD
55
V
E
lectrostatic discharge voltage
(Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
V
ESD
2
kV
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
junction - case:
R
thJC
0.8
K/W
junction - case:
R
thJA
75
1Temperatures above 175C will reduce lifetime of the device
2 Not tested, specified by design.
3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 408
Nov-03-2000
Page 4
BTS 333
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T
j
= 25C, unless otherwise specified
min.
typ.
max.
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150, I
D
= 10 mA
V
DS(AZ)
42
-
55
V
Off-state drain current
V
DS
= 32 V, T
j
=-40 ... +85C , V
IN
= 0 V
V
DS
= 32 V, T
j
=-40 ... +150C , V
IN
= 0 V
I
DSS
-
-
1
1
5
20
A
Gate threshold voltage, V
GS
= V
DS
I
D
= 1.9 mA, T
j
= -40 C
I
D
= 1.9 mA, T
j
= 25 C
V
GS(th)
-
1.3
-
1.7
2.4
2.2
V
On state input current (temp. limit. inactiv)
V
IN
= 10 V
V
IN
= 5 V
I
IN(on)
-
-
200
10
300
30
A
On-state resistance
V
IN
= 5 V, I
D
= 19 A, T
j
= 25 C
V
IN
= 5 V, I
D
= 19 A, T
j
= 150 C
R
DS(on)
-
-
18
29
23
46
m
On-state resistance
V
IN
= 10 V, I
D
= 19 A, T
j
= 25 C
V
IN
= 10 V, I
D
= 19 A, T
j
= 150 C
R
DS(on)
-
-
14
26
18
36
Nominal load current
V
IN
= 10 V, T
j
< 150C, T
A
= 85 C
I
D(ISO)
19
-
-
A
Continuous drain current
1)
T
C
= 120 C, V
IN
= 10 V
I
D
25
-
-
Current limit (active if V
DS
>2.5 V)
2)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 300 s
I
D(lim)
35
50
65
1if not limited by current limitation
2Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 s.
Nov-03-2000
Page 5
BTS 333
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T
j
= 25C, unless otherwise specified
min.
typ.
max.
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 2
, V
IN
= 0 to 10 V, V
bb
= 12 V
t
on
-
140
250
s
Turn-off time V
IN
to 10% I
D
:
R
L
= 2
, V
IN
= 10 to 0 V, V
bb
= 12 V
t
off
-
250
350
Slew rate on 70 to 50% V
bb
:
R
L
= 2
, V
IN
= 0 to 10 V, V
bb
= 12 V
-dV
DS
/dt
on
-
0.1
1
V/s
Slew rate off 50 to 70% V
bb
:
R
L
= 2
, V
IN
= 10 to 0 V, V
bb
= 12 V
dV
DS
/dt
off
-
0.2
1
Protection Functions
Input current protection mode
V
IN
= 5 V
V
IN
= 10 V
I
IN(Prot)
-
-
--
-
300
400
A
Inverse Diode
Inverse diode forward voltage
t
m
= 250 s, V
IN
= 0 V
, -
I
D
= 5*19 A, t
P
= 300 s
V
SD
-
1.0
-
V
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