PROFET BTS612N1
Semiconductor Group
1 of 15
2003-Oct-01
Smart Two Channel Highside Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in OFF-state
CMOS compatible input
Loss of ground and loss of V
bb
protection
Electrostatic discharge (ESD) protection
Application
C compatible power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Providing embedded protective functions.
+ V bb
IN1
ST
Signal GND
ESD
PROFET
OUT1
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection 1
Short to Vbb
Level shifter
Temperature
sensor 1
Rectifier 1
Limit for
unclamped
ind. loads 1
Gate 1
protection
Current
limit 1
3
5
2
4
1
Load GND
Load
V
Logic
Overvoltage
protection
OUT2
Open load
detection 2
Short to Vbb
Level shifter
Temperature
sensor 2
Rectifier 2
Limit for
unclamped
ind. loads 2
Gate 2
protection
Current
limit 2
7
IN2
6
Charge
pump 1
Charge
pump 2
1
) With external current limit (e.g. resistor R
GND
=150
) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage protection
V
bb(AZ)
43
V
Operating voltage
V
bb(on)
5.0 ... 34
V
channels: each
both
parallel
On-state resistance R
ON
200
100 m
Load current (ISO)
I
L(ISO)
2.3
4.4
A
Current limitation
I
L(SCr)
4
4
A
TO-220AB/7
1
7
Standard
1
7
Straight leads
1
7
SMD
BTS612N1
Semiconductor Group
2
2003-Oct-01
Pin Symbol
Function
1
OUT1 (Load, L)
Output 1, protected high-side power output of channel 1
2 GND
Logic
ground
3
IN1
Input 1, activates channel 1 in case of logical high signal
4 Vbb
Positive power supply voltage,
the tab is shorted to this pin
5 ST
Diagnostic feedback: open drain, low on failure
6
IN2
Input 2, activates channel 2 in case of logical high signal
7
OUT2 (Load, L)
Output 2, protected high-side power output of channel 2
Maximum Ratings at T
j
= 25 C unless otherwise specified
Parameter Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4)
V
bb
43
V
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150C
V
bb
34
V
Load dump protection
2
)
V
LoadDump
= U
A
+ V
s
, U
A
= 13.5 V
R
I
3
)
= 2
, R
L
= 5.3
, t
d
= 200 ms, IN= low or high
V
Load dump
4
)
60
V
Load current (Short circuit current, see page 5)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
C
Power dissipation (DC), T
C
25 C
P
tot
36
W
Inductive load switch-off energy dissipation, single pulse
V
bb
=
12V, T
j,start
=
150C, T
C
=
150C const.
one channel, I
L
=
2.3
A, Z
L
=
89
mH, 0
:
E
AS
290
mJ
both channels parallel, I
L
=
4.4
A, Z
L
=
47
mH, 0
:
580
see diagrams on page 9
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
V
ESD
1.0
2.0
kV
Input voltage (DC)
V
IN
-10 ... +16
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
I
IN
I
ST
2.0
5.0
mA
2
) Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins, e.g. with a
150
resistor in the GND connection and a 15 k
resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
R
I
= internal resistance of the load dump test pulse generator
4)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
BTS612N1
Semiconductor Group
3
2003-Oct-01
Thermal Characteristics
Parameter and Conditions Symbol
Values
Unit
min typ
max
Thermal resistance
chip - case, both channels:
each
channel:
junction - ambient (free air):
R
thJC
R
thJA
--
--
--
--
--
--
3.5
7.0
75
K/W
SMD version, device on PCB
5)
:
37
5
) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
Electrical Characteristics
Parameter and Conditions,
each channel
Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1 or 7)
I
L
= 1.8 A
T
j
=25 C:
each channel
T
j
=150 C:
R
ON
--
160
320
200
400
m
Nominal load current, ISO Norm (pin 4 to 1 or 7)
V
ON
= 0.5 V, T
C
= 85 C
each channel:
both channels parallel:
I
L(ISO)
1.8
3.5
2.3
4.4
--
--
A
Output current (pin
1
or 7) while GND disconnected
or GND pulled up, V
bb
=30 V, V
IN
= 0, see diagram
page 8
I
L(GNDhigh)
-- --
10
mA
Turn-on time
IN
to 90% V
OUT
:
Turn-off time
IN
to 10% V
OUT
:
R
L
= 12
,
T
j
=-40...+150C
t
on
t
off
80
80
200
200
400
400
s
Slew rate on
10 to 30% V
OUT
,
R
L
= 12
,
T
j
=-40...+150C
dV /dt
on
0.1 -- 1
V/
s
Slew rate off
70 to 40% V
OUT
, R
L
= 12
,
T
j
=-40...+150C
-dV/dt
off
0.1 -- 1
V/
s
BTS612N1
Parameter and Conditions,
each channel
Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min typ
max
Semiconductor Group
4
2003-Oct-01
Operating Parameters
Operating voltage
6
)
T
j
=-40...+150C: V
bb(on)
5.0
--
34
V
Undervoltage shutdown
T
j
=-40...+150C: V
bb(under)
3.5 --
5.0
V
Undervoltage restart
T
j
=-40...+25C:
T
j
=+150C:
V
bb(u rst)
--
--
5.0
7.0
V
Undervoltage restart of charge pump
see diagram page 12
V
bb(ucp)
-- 5.6 7.0
V
Undervoltage hysteresis
V
bb(under)
= V
bb(u rst)
- V
bb(under)
V
bb(under)
-- 0.2 --
V
Overvoltage shutdown
T
j
=-40...+150C: V
bb(over)
34
--
43
V
Overvoltage restart
T
j
=-40...+150C: V
bb(o rst)
33 -- --
V
Overvoltage hysteresis
T
j
=-40...+150C:
V
bb(over)
-- 0.5 --
V
Overvoltage protection
7
)
T
j
=-40...+150C:
I
bb
=40 mA
V
bb(AZ)
42
47
--
V
Standby current (pin 4)
,
V
IN
=0
T
j
=-40...+150C:
I
bb(off)
--
90 150
A
Operating current (Pin 2)
8)
, V
IN
=5 V
both channels on, T
j
=-40...+150C,
I
GND
-- 0.6 1.2
mA
Operating current (Pin 2)
8)
one channel on, T
j
=-40...+150C:,
I
GND
-- 0.4 0.7
mA
6)
At supply voltage increase up to V
bb
= 5.6 V typ without charge pump, V
OUT
V
bb
- 2 V
7)
See also V
ON(CL)
in table of protection functions and circuit diagram page 8.
8
)
Add I
ST
, if I
ST
> 0, add I
IN
, if V
IN
>5.5 V
BTS612N1
Parameter and Conditions,
each channel
Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min typ
max
Semiconductor Group
5
2003-Oct-01
Protection Functions
9)
Initial peak short circuit current limit (pin 4 to 1
or 7)
I
L(SCp)
T
j
=-40C:
T
j
=25C:
T
j
=+150C:
5.5
4.5
2.5
9.5
7.5
4.5
13
11
7
A
Repetitive short circuit shutdown current limit
I
L(SCr)
T
j
= T
jt
(see timing diagrams, page 11)
--
4
--
A
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL)
I
L
= 40 mA:
V
ON(CL)
41
47 53
V
Thermal overload trip temperature
T
jt
150 -- --
C
Thermal hysteresis
T
jt
-- 10 --
K
Reverse battery (pin 4 to 2)
10
)
-V
bb
--
--
32
V
Reverse battery voltage drop
(V
out
> V
bb
)
I
L
= -1.9 A, each channel
T
j
=150 C:
-V
ON(rev)
--
610 --
mV
Diagnostic Characteristics
Open load detection current
(included in standby current I
bb(off)
)
I
L(off)
-- 30
--
A
Open load detection voltage
T
j
=-40..150C:
V
OUT(OL)
2 3
4
V
9
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10
) Requires 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
BTS612N1
Parameter and Conditions,
each channel
Symbol
Values
Unit
at T
j
= 25 C, V
bb
= 12 V unless otherwise specified
min typ
max
Semiconductor Group
6
2003-Oct-01
Input and Status Feedback
11
)
Input resistance
T
j
=-40..150C, see circuit page 7
R
I
2.5
3.5 6
k
Input turn-on threshold voltage
T
j
=-40..+150 V
IN(T+)
1.7 --
3.5
V
Input turn-off threshold voltage
T
j
=-40..+150 V
IN(T-)
1.5 -- --
V
Input threshold hysteresis
V
IN(T)
-- 0.5 --
V
Off state input current (pin 3 or 6), V
IN
= 0.4 V,
T
j
=-40..+150C
I
IN(off)
1
--
50
A
On state input current (pin 3 or 6), V
IN
= 3.5 V,
T
j
=-40..+150C
I
IN(on)
20 50 90
A
Delay time for status with open load
after Input neg. slope (see diagram page 12)
t
d(ST OL3)
--
220
--
s
Status output (open drain)
Zener limit voltage T
j
=-40...+150C, I
ST
= +1.6 mA:
ST low voltage
T
j
=-40...+25C, I
ST
= +1.6 mA:
T
j
= +150C, I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
--
6.1
--
--
--
0.4
0.6
V
11)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
BTS612N1
Semiconductor Group
7
2003-Oct-01
Truth Table
IN1
IN2
OUT1
OUT2
ST
ST
BTS611L1
BTS612N1
Normal operation
L
L
H
H
L
H
L
H
L
L
H
H
L
H
L
H
H
H
H
H
H
H
H
H
Open load
Channel 1
L
L
H
L
H
X
Z
Z
H
L
H
X
H(L
12
))
H
L
L
H
H
Channel 2
L
H
X
L
L
H
L
H
X
Z
Z
H
H(L
12
))
H
L
L
H
H
Short circuit to Vbb
Channel 1
L
L
H
L
H
X
H
H
H
L
H
X
L
13)
H
H(L
14
))
L
H
H
Channel 2
L
H
X
L
L
H
L
H
X
H
H
H
L
13)
H
H(L
14
))
L
H
H
Overtemperature
both channel
L
X
H
L
H
X
L
L
L
L
L
L
H
L
L
H
L
L
Channel 1
L
H
X
X
L
L
X
X
H
L
H
L
Channel 2
X
X
L
H
X
X
L
L
H
L
H
L
Undervoltage/ Overvoltage
X
X
L
L
H
H
L = "Low" Level
X = don't care
Z = high impedance, potential depends on external circuit
H = "High" Level
Status signal after the time delay shown in the diagrams (see fig 5. page 12)
12
) With additional external pull up resistor
13)
An external short of output to
V
bb
, in the off state, causes an internal current from output to ground. If R
GND
is used, an offset voltage at the GND and ST pins will occur and the V
ST low
signal may be errorious.
14
) Low resistance to
V
bb
may be detected in the ON-state by the no-load-detection
Terms
PROFET
V
IN2
ST
OUT2
GND
bb
VST
V
IN1
I ST
I IN1
V
bb
Ibb
I L2
VOUT2
IGND
VON2
1
2
4
3
5
IN1
V
IN2
I IN2
V
OUT1
VON1
I L1
OUT1
6
7
R
GND
Input circuit (ESD protection)
IN
GND
I
R
ESD-ZD
I
I
I
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
BTS612N1
Semiconductor Group
8
2003-Oct-01
Status output
ST
GND
ESD-
ZD
+5V
R
ST(ON)
ESD-Zener diode: 6.1 V typ., max 5 mA;
R
ST(ON)
< 380
at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Inductive and overvoltage output clamp
+ Vbb
OUT
GND
PROFET
VZ
V
ON
V
ON
clamped to 47 V typ.
Overvolt. and reverse batt. protection
+ Vbb
IN2
ST
ST
R
GND
GND
R
Signal GND
Logic
VZ2
IN1
RI
V
Z1
V
Z1
= 6.1 V typ., V
Z2
= 47 V typ., R
I
= 3.5 k
typ
,
R
GND
= 150
Open-load detection
OFF-state diagnostic condition: V
OUT
> 3 V typ.; IN low
Open load
detection
Logic
unit
V
OUT
Signal GND
I
L(OL)
OFF
GND disconnect
PROFET
V
IN2
ST
OUT2
GND
bb
V
bb
Ibb
1
2
4
3
5
IN1
OUT1
6
7
V
IN1
V
IN2
V
ST
V
GND
Any kind of load. In case of Input=high is V
OUT
V
IN
- V
IN(T+)
.
Due to V
GND
>0, no V
ST
= low signal available.
GND disconnect with GND pull up
PROFET
V
IN2
ST
OUT2
GND
bb
V
bb
1
2
4
3
5
IN1
OUT1
6
7
V
IN1
V
IN2
V
ST
V
GND
Any kind of load. If V
GND >
V
IN
- V
IN(T+)
device stays off
Due to V
GND
>0, no V
ST
= low signal available.
BTS612N1
Semiconductor Group
9
2003-Oct-01
V
bb
disconnect with energized inductive
load
PROFET
V
IN2
ST
OUT2
GND
bb
V
bb
1
2
4
3
5
IN1
OUT1
6
7
high
Normal load current can be handled by the PROFET
itself.
V
bb
disconnect with charged external
inductive load
PROFET
V
IN2
ST
OUT2
GND
bb
1
2
4
3
5
IN1
OUT1
6
7
V
bb
high
D
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
EAS
bb
L
R
ELoad
L
RL
{
Z L
Energy stored in load inductance:
E
L
=
1/2
L
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
i
L
(t) dt,
with an approximate solution for R
L
>
0
:
E
AS
=
I
L
L
2
R
L
(
V
bb
+
|V
OUT(CL)
|)
ln
(1+
I
L
R
L
|V
OUT(CL)
|
)
Maximum allowable load inductance for
a single switch off
(both channels parallel)
L = f (I
L
);
T
j,start
=
150C,T
C
=
150C const.,
V
bb
=
12
V, R
L
=
0
L [mH]
1
10
100
1000
2
3
4
5
6
7
8
IL [A]
BTS612N1
Semiconductor Group
10
2003-Oct-01
Typ. transient thermal impedance chip case
Z
thJC
= f(t
p
), one Channel active
Z
thJC
[K/W]
0.01
0.1
1
10
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
tp [s]
Transient thermal impedance chip case
Z
thJC
= f(t
p
), both Channel active
Z
thJC
[K/W]
0.01
0.1
1
10
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
tp [s]
BTS612N1
Semiconductor Group
11
2003-Oct-01
Timing diagrams
Both channels are symmetric and consequently the diagrams
are valid for each channel as well as for permuted channels
Figure 1a: V
bb
turn on:
IN2
V
OUT1
t
V
bb
ST open drain
IN1
V
OUT2
Figure 2a: Switching a lamp:
IN
ST
OUT
L
t
V
I
Figure 2b: Switching an inductive load
IN
ST
L
t
V
I
OUT
Figure 3a: Short circuit
shut down by overtempertature, reset by cooling
IN
ST
L
t
I
other channel: normal operation
L(SCr)
I
IL(SCp)
BTS612N1
Semiconductor Group
12
2003-Oct-01
Heating up may require several milliseconds, depending on
external conditions
Figure 4a: Overtemperature:
Reset if T
j
<T
jt
IN
ST
OUT
J
t
V
T
Figure 5a: Open load: detection in OFF-state, turn
on/off to open load
OUT1
t
V
ST
IN1
I
L1
t
d(ST OL3)
t
d(ST OL3)
IN2 channel 2: normal operation
channel 1: open load
t
d(ST,OL3)
depends on external circuitry because of high
impedance
*) I
L
= 30
A typ
Figure 6a: Undervoltage:
IN
V
OUT
t
V
bb
ST open drain
V
V
bb(under)
bb(u rst)
bb(u cp)
V
Figure 6b: Undervoltage restart of charge pump
bb(under)
V
V
bb(u rst)
V
bb(over)
V
bb(o rst)
V
bb(u cp)
o
ff-sta
t
e
on-
st
at
e
V
ON(CL)
V
bb
V
on
o
ff-sta
t
e
charge pump starts at V
bb(ucp)
=5.6 V typ.
BTS612N1
Semiconductor Group
13
2003-Oct-01
Figure 7a: Overvoltage:
IN
V
OUT
t
V
bb
ST
ON(CL)
V
V
bb(over)
V
bb(o rst)
BTS612N1
Semiconductor Group
14
2003-Oct-01
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/7
Ordering
code
BTS612N1
Q67060-S6303-A2
TO 220AB/7, Opt. E3230
Ordering
code
BTS612N1 E3230
Q67060-S6303-A3
SMD TO 220AB/7, Opt. E3128
Ordering code
BTS612N1 E3128A T&R:
Q67060-S6303-A4
Changed since 04.96
Date Change
Dec
1996
t
d(ST OL4)
max reduced from 1500
to 800s, typical from 400 to
320s, min limit unchanged
E
AS
maximum rating and diagram
and Z
thJC
diagram added
ESD capability increased
Typ. reverse battery voltage drop -
V
ON(rev)
added
BTS612N1
Semiconductor Group
15
2003-Oct-01
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 Mnchen
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-
support devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.
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