Data Sheet
1
05.99
SIPMOS
Power Transistor
Product Summary
Drain source voltage
55
V
DS
V
Drain-Source on-state resistance
0.008
R
DS(on)
I
D
Continuous drain current
80
A
Features
N channel
Enhancement mode
Avalanche rated
d
v
/d
t
rated
175C operating temperature
Pin 1
Pin 2
Pin 3
G
D
S
Packaging
Type
Package
Ordering Code
BUZ111S
Tube
P-TO220-3-1 Q67040-S4003-A2
BUZ111S E3045A
Tape and Reel
Q67040-S4003-A6
P-TO263-3-2
Tube
BUZ111S E3045
P-TO263-3-2 Q67040-S4003-A5
Maximum Ratings, at
T
j = 25 C, unless otherwise specified
Parameter
Symbol
Unit
Value
Continuous drain current
T
C
= 25 C,
1)
T
C
= 100 C
80
80
I
D
A
Pulsed drain current
T
C
= 25 C
I
Dpulse
320
Avalanche energy, single pulse
I
D
= 80 A,
V
DD
= 25 V,
R
GS
= 25
mJ
E
AS
700
Avalanche energy, periodic limited by
T
jmax
30
E
AR
Reverse diode d
v
/d
t
I
S
= 80 A,
V
DS
= 40 V, d
i
/d
t
= 200 A/s,
T
jmax
= 175 C
d
v
/d
t
6
kV/s
Gate source voltage
V
GS
20
V
Power dissipation
T
C
= 25 C
P
tot
300
W
Operating and storage temperature
T
j ,
T
stg
C
-55... +175
55/175/56
IEC climatic category; DIN IEC 68-1
BUZ 111S
BUZ 111S
Data Sheet
2
05.99
Thermal Characteristics
Parameter
Values
Symbol
Unit
typ.
max.
min.
Characteristics
R
thJC
-
-
0.5
K/W
Thermal resistance, junction - case
-
Thermal resistance, junction - ambient, leded
R
thJA
-
62
-
-
-
-
62
40
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
Electrical Characteristics, at
T
j = 25 C, unless otherwise specified
Parameter
Symbol
Unit
Values
min.
max.
typ.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
-
V
(BR)DSS
55
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 240 A
V
GS(th)
4
3
2.1
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 150 C
-
-
I
DSS
A
1
100
0.1
-
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
I
GSS
-
10
nA
100
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 80 A
R
DS(on)
-
0.0065 0.008
1current limited by bond wire
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain
connection. PCB is vertical without blown air.
BUZ 111S
Data Sheet
3
05.99
Electrical Characteristics, at
T
j = 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
= 80 A
g
fs
30
73
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
-
3600
4500
pF
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-
1100
1375
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
rss
-
550
690
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 80 A,
R
G
= 2.4
t
d(on)
-
25
37
ns
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 80 A,
R
G
= 2.4
t
r
-
30
45
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 80 A,
R
G
= 2.4
t
d(off)
-
65
95
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 80 A,
R
G
= 2.4
t
f
-
40
60
BUZ 111S
Data Sheet
4
05.99
Electrical Characteristics, at
T
j = 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Gate to source charge
V
DD
= 40 V,
I
D
= 80 A
27
nC
18
Q
gs
-
-
61
Q
gd
Gate to drain charge
V
DD
= 40 V,
I
D
= 80 A
91.5
Gate charge total
V
DD
= 40 V,
I
D
= 80 A,
V
GS
= 0 to 10 V
-
125
185
Q
g
Gate plateau voltage
V
DD
= 40 V,
I
D
= 80 A
V
(plateau)
5.45
-
V
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
I
S
-
-
80
A
Inverse diode direct current,pulsed
T
C
= 25 C
I
SM
-
-
320
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 160 A
V
SD
-
1.25
V
1.8
Reverse recovery time
V
R
= 30 V,
I
F
=
I
S
, d
i
F
/d
t
= 100 A/s
t
rr
-
105
ns
160
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
, d
i
F
/d
t
= 100 A/s
Q
rr
-
C
0.29
0.45
BUZ 111S
Data Sheet
5
05.99
Power Dissipation
P
tot
=
f
(
T
C
)
0
20
40
60
80
100 120 140 160 C 190
T
C
0
40
80
120
160
200
240
W
320
BUZ111S
P
tot
Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
10 V
0
20
40
60
80
100 120 140 160 C 190
T
C
0
10
20
30
40
50
60
70
A
90
BUZ111S
I
D
Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
BUZ111S
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25 C
10
-1
10
0
10
1
10
2
V
V
DS
0
10
1
10
2
10
3
10
A
BUZ111S
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 s
t
p
= 29.0s
PDF 
ZIP