FOA11002A1

N e v e r s t o p t h i n k i n g .

Features

Input sensitivity: -18.0 dBm
electrical at BER = 10

-12

Transimpedance: 6 k

Overload: 0 dBm electrical

Single power supply: +5 V

Low power consumption:
170 mW

Internal DC compensation
loop increases dynamic
range

Internal bias generation for
PIN photo diode including
low-pass filter

Operates with PIN photo
diode or APD

Monitor output for mirrored
photodiode current

Typical Applications

Fiber optics telecom and
datacom applications

SONET/SDH OC-192/STM-64
with and without FEC

Preamplifier modules

Optical receiver modules

Main Advantages

Data rate from 9.95 Gbit to
10.7 Gbit/s up to 10.7 Gbit/s
Input sensitivity:
- 18.0 dBm at BER = 10

-12

Transimpedance: 6 k

High overload: 1.5 mA pp
maximum input current

Single power supply: +5 V

Low power consumption:
170 mW

Internal DC compensation
loop increases dynamic
range

Internal bias generation for
PIN photo diode including
low-pass filter

Operates with PIN photo
diode or APD

Monitor output for mirrored
photodiode current

Few external components
necessary

Small chip size of
0.97 x 0.97 mm
(available as bare die)

F O A 1 1 0 0 2 A 1

T r a n s i m p e d a n c e A m p l i f i e r

T I A 9 . 9 5 - 1 0 . 7 G b i t / s , 5 . 0 V

S e m i c o n d u c t o r S o l u t i o n s f o r
H i g h S p e e d C o m m u n i c a t i o n
a n d F i b e r O p t i c A p p l i c a t i o n s

The FOA11002A1 is the industry's lowest power
consuming STM64/OC-192 Transimpedance Amplifier
for SDH/SONET systems in Silicon Germanium technol-
ogy. This new device is a key component for future high
speed optical communication systems for regional, met-
ropolitan and backbone transport data networks at the
highest speeds up to 10.7 Gbit/s over one single fiber.
It is a member of the complete 10 Gbit/s chipset in the
Silicon Germanium technology.

Packing

Type

Sales Code

Package

TIA

FOA11002A

Bare die

How to reach us:
http://www.infineon.com

Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
81541 M�nchen

Attention please!
The information herein is given to describe certain compo-
nents and shall not be considered as warranted character-
istics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but
not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our
Infineon Technologies Representatives worldwide.

Warnings
Due to technical requirements components may contain dan-
gerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in
life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such com-
ponents can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human
body, or to support and/or maintain and sustain and/or
protect human life. If they fail, it is reasonable to assume
that the health of the user or other persons may be
endangered.

Published by Infineon Technologies AG

30 nF

DataOUT+

DataOUT-

CAP

GND

560 pF

F O A 1 1 0 0 2 A

FIL

1 k

+5 V

MONI

Mirrored Photo Diode Current

FOA11002A1
Block Diagram

BIAS

REF

Compensation

F O A 1 1 0 0 2 A 1

FIL

CAP

GND

MONI

Application Example

Ordering No. B168-H7712-G1-X-7600
Printed in Germany
PS 1201.5

TIA

FOA11002A1

Optional Serial CDR

CDR

FOA31002B1

DEMUX+CDR

FOA51001B1

Data

Processing

Laser Driver

FOA21002A1

MUX+CMU

FOA41001B1

Laser

Framer/

Mapper

FOAxxxx

One Chip

Transceiver

FOA6100xB1

10 Gbit/s
Chipset Overview

Электронный компонент: FOA11002A1