I n f i n e o n S p e c i a l t y D R A M s
M o b i l e - R A M
w w w . i n f i n e o n . c o m / m e m o r y / M o b i l e - R A M
N e v e r s t o p t h i n k i n g .
M o b i l e - R A M E x t e n d e d B a t t e r y
L i f e t i m e f o r H a n d h e l d s
A S O N E O F T H E W O R L D ' S T O P T H R E E memory companies, Infineon offers a wide portfolio of
leading-edge Mobile-RAM devices (low-power SDRAMs) targeted specifically at:
PDAs
Cellphones (smart and feature phones)
Digital cameras
MP3 players
I N F I N E O N ' S M O B I L E - R A M product line combines
Ultra low-power consumption for battery-powered systems with
Extra compact chip-scale packages for space-constrained applications
I N F I N E O N ' S M O B I L E - R A M cuts power consumption by up to 80 % (depending on operating conditions
and system design) thanks to its latest memory technology, low operating voltage (1.8 V) and its unique, integrated
power management features.
M O B I L E - R A M D E V I C E S come in a Fine-pitch Ball Grid Array (FBGA) package. These packages leverage
Infineon's proprietary wire bonding Board-On-Chip (BOC) technology for smallest form factors. The latest product
generation further improves form factor by reducing package heights from 1.2 to 1 mm.
Impressive Power Consumption Savings
I N F I N E O N ' S M O B I L E - R A M devices achieve these dramatic power consumption savings by measuring
the temperature with an integrated sensor and automatically adjusting the refresh interval accordingly.
F O R U S E R S , this means that their devices can either run twice as long on a single battery charge or can
offer completely new features that would have been previously unthinkable. The fact that nearly half of all PDAs produced
today contain Mobile-RAMs from Infineon confirms the company's pioneering role in this segment.
Mobile-RAM for Lowest Power Consumption also in Operating Mode
Mobile-RAM for Unlimited Memory Supply in Standby Mode
3.3 V - 256 M
85 mA*
3.3 V - 256 M
65 mA*
2.5 V - 256 M
65 mA*
1.8 V - 256 M
60 mA*
281 mW
100 %
215 mW
77 %
100 %
163 mW
58 %
76 %
100 %
108 mW
38 %
50 %
66 %
P
o
w
er
consumption
Standard SDRAM
"low power sort"
* operating current (lcc1)
3.3 V - 256 M
850 A (70C)*
3.3 V - 256 M
475 A (70C)*
2.5 V - 256 M
475 A (70C)*
1.8 V - 256 M
375 A (70C)*
2.8 mW
100 %
1.6 mW
57 %
100 %
1.19 mW
43 %
74 %
100 %
0.68 mW
24 %
43 %
57 %
P
o
w
er
consumption
* standby current (lcc6)
Standard
SDRAM
"low power sort"
M A N U F A C T U R E R S A R E C H A L L E N G E D to lower core and I/O voltage in order to further reduce power
consumption. Compared with the 2.5 V technology previously in use, Infineon's next-generation 1.8 V technology meets
these demands by cutting power consumption by approximately 40 %.
T H E M A R K E T I S A L S O C A L L I N G for a reduction in harmful substances, the elimination of lead in chips
and easier recycling. Infineon is one of the first manufacturers to offer Mobile-RAM chips in green packages.
I N A N T I C I P A T I O N O F R I S I N G demand for cost-optimized multi-chip solutions, (combining flash and
Mobile-RAM) Infineon will also soon be introducing a pre-tested Known Good Die (KGD) / wafer solution.
A N D T O R E D U C E P O W E R consumption even further, Infineon plans to switch its Mobile-RAM devices from
SDR to DDR speeds. Due to be launched in the near future. For more details, please contact your local sales representative.
Ahead of the Trend
Industry-wide Standard
I N F I N E O N W O R K E D C L O S E L Y with its industry partners to standardize the low-power features and
54-ball FBGA package for Mobile-RAM through JEDEC (Joint Electron Device Engineering Council), the semiconductor
engineering standardization body of EIA (Electronic Industry Alliance). Information on controller and ASIC vendors that
support the new Mobile-RAM feature set standard is available on request.
F O R T H E L A T E S T I N F O R M A T I O N and datasheet updates on Mobile-RAM, visit our website at
www.infineon.com/memory/Mobile-RAM
Voltage
conversion
Trend towards
green package
Trend towards
KGD
Trend towards
DDR
Source: IFX
2003
DDR
SDR
3.3 V
2004
2005
1.8 V
2.5 V
Known Good Die
BGA
TSOP
FGBA
O
OC
CT
TS
S ((O
On
n--C
Ch
hiip
p T
Te
em
mp
pe
erra
attu
urre
e S
Se
en
nsso
orr))::
The built-in temperature sensor adapts the refresh
rate to the actual junction temperature of the chip
without draining any CPU power. (Note: with
standard DRAMs, the refresh rate is set to work at
the max. temperature.)
T
TC
CS
SR
R ((T
Te
em
mp
pe
erra
attu
urre
e--C
Co
om
mp
pe
en
nssa
atte
ed
d S
Se
ellff--R
Re
effrre
essh
h))::
Same as OCTS but externally triggered
CPU power required
Speed: 133 MHz CAS Latency: 3-3-3
Density
Part number
Temp.
Power
Power
# of
OCTS TCSR PASR DPD
DS
GREEN
Package
range
supply core
supply I/O
banks
product
128 Mb
HYB39L128160AT-7.5
0 - 70C
3.3 V
3.3 V
4
TSOP-54
8 M x 16
HYB39L128160AC-7.5
0 - 70C
3.3 V
3.3 V
4
FBGA-54
HYB25L128160AC-7.5
0 - 70C
2.5 V
2.5 V / 1.8 V
4
X
X
X
FBGA-54
HYE25L128160AC-7.5
-25 - 85C
2.5 V
2.5 V / 1.8 V
4
X
X
X
FBGA-54
NEW!
HYB18L128160BF-7.5
0 - 70C
1.8 V
1.8 V
4
X
X
X
X
X
FBGA-54
NEW!
HYE18L128160BF-7.5
-25 - 85C
1.8 V
1.8 V
4
X
X
X
X
X
FBGA-54
NEW!
HYB18L128160BC-7.5
0 - 70C
1.8 V
1.8 V
4
X
X
X
X
FBGA-54
NEW!
HYE18L128160BC-7.5
-25 - 85C
1.8 V
1.8 V
4
X
X
X
X
FBGA-54
256 Mb
HYB39L256160AT-7.5
0 - 70C
3.3 V
3.3 V
4
TSOP-54
16 M x 16
HYB39L256160AC-7.5
0 - 70C
3.3 V
3.3 V
4
FBGA-54
HYB25L256160AC-7.5
0 - 70C
2.5 V
2.5 V / 1.8 V
4
X
X
X
X
FBGA-54
HYE25L256160AC-7.5
-25 - 85C
2.5 V
2.5 V / 1.8 V
4
X
X
X
X
FBGA-54
HYB25L256160AF-7.5
0 - 70C
3.3 V
3.3 V or
4
X
X
X
X
X
FBGA-54
or 2.5 V
2.5 V / 1.8 V
HYE25L256160AF-7.5
-25 - 85C
3.3 V
3.3 V or
4
X
X
X
X
X
FBGA-54
or 2.5 V
2.5 V / 1.8 V
NEW!
HYB18L256160BF-7.5
0 - 70C
1.8 V
1.8 V
4
X
X
X
X
X
FBGA-54
NEW!
HYE18L256160BF-7.5
-25 - 85C
1.8 V
1.8 V
4
X
X
X
X
X
FBGA-54
NEW!
HYB18L256160BC-7.5
0 - 70C
1.8 V
1.8 V
4
X
X
X
X
FBGA-54
NEW!
HYE18L256160BC-7.5
-25 - 85C
1.8 V
1.8 V
4
X
X
X
X
FBGA-54
512 Mb,Dual
HYB25L512160AC-7.5
3.3 V
3.3 V or
4
X
X
X
FBGA-54
16 M x 16
0 - 70C
or 2.5 V
2.5 V / 1.8 V
Product Portfolio
P
PA
AS
SR
R ((P
Pa
arrttiia
all A
Arrrra
ay
y S
Se
ellff--R
Re
effrre
essh
h))::
Allows user to select volume of memory needed to
further reduce power consumption
Adjustable from all 4 banks to 1/16 array
D
DP
PD
D ((D
De
ee
ep
p P
Po
ow
we
err--D
Do
ow
wn
n))::
Maximum power consumption reduction by cutting
off power supply to Mobile-RAM
Data is not retained
D
DS
S ((S
Se
elle
ecctta
ab
blle
e D
Drriiv
ve
e S
Sttrre
en
ng
gtth
h))::
Can be adjusted to reflect bus load, e.g. half
strength for point-to-point and full strength for
module applications
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