www.docs.chipfind.ru
2003-07-31
Rev.2
Page 1
IDP06E60
IDB06E60
Fast Switching EmCon Diode
Product Summary
V
RRM
600
V
I
F
6
A
V
F
1.5
V
T
jmax
175
C
Feature
600 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
175C operating temperature
Easy paralleling
P-TO220-3.SMD
P-TO220-2-2.
Pin 1
PIN 2
PIN 3
C
A
-
NC
C
A
Marking
D06E60
D06E60
Type
Package
Ordering Code
IDP06E60
P-TO220-2-2.
Q67040-S4480
IDB06E60
P-TO220-3.SMD Q67040-S4481
Maximum Ratings, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
600
V
Continous forward current
T
C
=25C
T
C
=90C
I
F
14.7
10
A
Surge non repetitive forward current
T
C
=25C, t
p
=10 ms, sine halfwave
I
FSM
29
Maximum repetitive forward current
T
C
=25C, t
p
limited by T
jmax
, D=0.5
I
FRM
22
Power dissipation
T
C
=25C
T
C
=90C
P
tot
46.9
26.6
W
Operating and storage temperature
T
j ,
T
stg
-55...+175
C
Soldering temperature
1.6mm(0.063 in.) from case for 10s
T
S
255
C
2003-07-31
Rev.2
Page 2
IDP06E60
IDB06E60
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
-
3.2
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
35
62
-
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Reverse leakage current
V
R
=600V, T
j
=25C
V
R
=600V, T
j
=150C
I
R
-
-
-
-
50
500
A
Forward voltage drop
I
F
=6A, T
j
=25C
I
F
=6A, T
j
=150C
V
F
-
-
1.5
1.5
2
-
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
2003-07-31
Rev.2
Page 3
IDP06E60
IDB06E60
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Reverse recovery time
V
R
=400V, I
F
=6A, di/dt=550A/s, T
j
=25C
V
R
=400V, I
F
=6A, di/dt=550A/s , T
j
=125C
V
R
=400V, I
F
=6A, di/dt=550A/s , T
j
=150C
t
rr
-
-
-
70
100
105
-
-
-
ns
Peak reverse current
V
R
=400V, I
F
=6A, di/dt=550A/s, T
j
=25C
V
R
=400V, I
F
=6A, di/dt=550A/s, T
j
=125C
V
R
=400V, I
F
=6A, di/dt=550A/s, T
j
=150C
I
rrm
-
-
-
6.5
7.4
7.9
-
-
-
A
Reverse recovery charge
V
R
=400V, I
F
=6A, di/dt=550A/s, T
j
=25C
V
R
=400V, I
F
=6A, di/dt=550A/s, T
j
=125C
V
R
=400V, I
F
=6A, di/dt=550A/s, T
j
=150C
Q
rr
-
-
-
240
360
400
-
-
-
nC
Reverse recovery softness factor
V
R
=400V, I
F
=6A, di
F
/dt=550A/s, T
j
=25C
V
R
=400V, I
F
=6A, di
F
/dt=550A/s, T
j
=125C
V
R
=400V, I
F
=6A, di
F
/dt=550A/s, T
j
=150C
S
-
-
-
4
4.8
4.9
-
-
-
2003-07-31
Rev.2
Page 4
IDP06E60
IDB06E60
2 Diode forward current
I
F
= f(T
C
)
parameter: T
j
175C
25
50
75
100
125
C
175
T
C
0
2
4
6
8
10
12
A
16
I
F
1 Power dissipation
P
tot
= f (T
C
)
parameter: Tj 175 C
25
50
75
100
125
C
175
T
C
0
5
10
15
20
25
30
35
40
W
50
P
tot
3 Typ. diode forward current
I
F
= f (V
F
)
0
0.5
1
1.5
V
2.5
V
F
0
2
4
6
8
10
12
14
A
18
I
F
-55C
25C
100C
150C
4 Typ. diode forward voltage
V
F
= f (T
j
)
-60
-20
20
60
100
C
160
T
j
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
V
2
V
F
3A
6A
12A
2003-07-31
Rev.2
Page 5
IDP06E60
IDB06E60
5 Typ. reverse recovery time
t
rr
= f (di
F
/dt)
parameter: V
R
= 400V, T
j
= 125C
200
300
400
500
600
A/s
800
di
F
/dt
0
50
100
150
200
ns
300
t
rr
12A
6A
3A
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter: V
R
= 400V, T
j
= 125 C
200
300
400
500
600
A/s
800
di
F
/dt
250
275
300
325
350
375
400
425
450
475
500
nC
550
Q
rr
3A
6A
12A
7 Typ. reverse recovery current
I
rr
= f (di
F
/dt)
parameter: V
R
= 400V, T
j
= 125C
200
300
400
500
600
A/s
800
di
F
/dt
3
4
5
6
7
8
9
A
11
I
rr
12A
6A
3A
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter: V
R
= 400V, T
j
= 125C
200
300
400
500
600
700
800
A/s
1000
di
F
/dt
0
1
2
3
4
5
6
7
8
9
11
S
12A
6A
3A
PDF 
ZIP