P-DSO-28-14

Data Sheet

2001-02-01

TrilithIC

Data Sheet

BTS 7700 G

Overview

1.1

Features

· Quad D-MOS switch driver
· Free configurable as bridge or quad-switch
· Optimized for DC motor management applications
· Low

DS ON

: 110 m

high-side switch, 90 m low-

side switch (typical values @ 25

· Maximum peak current: typ. 9 A @ 25

· Very low quiescent current: typ. 5

A @ 25 C=

· Small outline, enhanced power P-DSO-package
· Load and GND-short-circuit-protection
· Operates up to 40 V
· Status flag diagnosis
· Overtemperature shut down with hysteresis
· Internal clamp diodes
· Isolated sources for external current sensing
· Under-voltage detection with hysteresis
· PWM frequencies up to 50 kHz

1.2

Description

The BTS 7700 G is part of the TrilithIC family containing three dies in one package:
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 7700 G can be used in H-bridge- as well as in any other
configuration. The double high-side is manufactured in SMART SIPMOS

technology

which combines low

DS ON

vertical DMOS power stages with CMOS control circuitry.

The high-side switch is fully protected and contains the control and diagnosis circuitry.
To achieve low

DS ON

and fast switching performance, the low-side switches are

manufactured in S-FET logic level technology. The equivalent standard product is the
BUZ 104 SL.
In contrast to the BTS 7710 G, which consists of lower ohmic chips in the same
package, the BTS 7700 G offers a lower price for applications, which do not need the
high current capability of the BTS 7710 G or BTS 7710 GP.

Type

Ordering Code

Package

BTS 7700 G

Q67007-A9375

P-DSO-28-14

BTS 7700 G

Data Sheet

2001-02-01

1.3

Pin Configuration
(top view)

Figure 1

28 DL1

25 DL1

27 SL1

26 SL1

24 DHVS

23 SH1

22 SH1

21 SH2

20 SH2

19 DHVS

18 DL2

15 DL2

16 SL2

17 SL2

DL1

DHVS

N.C.

DL1

IL1

GND

IH1

IH2

DHVS

DL2

N.C.

DL2

IL2

HS-Leadframe

LS-Leadframe

BTS 7700 G

Data Sheet

2001-02-01

Pins written in bold type need power wiring.

1.4

Pin Definitions and Functions

Pin No.

Symbol

Function

1, 3, 25, 28

DL1

Drain of low-side switch1, leadframe 1

IL1

Analog input of low-side switch1

N.C.

not connected

5, 10, 19, 24

DHVS

Drain of high-side switches and power supply voltage,
leadframe 2

GND

Ground

IH1

Digital input of high-side switch1

Status of high-side switches; open Drain output

IH2

Digital input of high-side switch2

N.C.

not connected

12, 14, 15, 18

DL2

Drain of low-side switch2, leadframe 3

IL2

Analog input of low-side switch2

16,17

SL2

Source of low-side switch2

20,21

SH2

Source of high-side switch2

22,23

SH1

Source of high-side switch1

26,27

SL1

Source of low-side switch1

To reduce the thermal resistance these pins are direct connected via metal bridges to the leadframe.

BTS 7700 G

Data Sheet

2001-02-01

1.5

Functional Block Diagram

Figure 2
Block Diagram

SH2

DHVS

IL1

GND

IH1

SL2

IH2

IL2

SL1

DL2

SH1

DL1

5,10,19,24

20,21

16, 17

Biasing and Protection

Diagnosis

Driver

OUT

0 L L

0 1 L H
1 0 H L
1 1 H H

22, 23

1,3,25,28

26, 27

12,14,15,18

BTS 7700 G

Data Sheet

2001-02-01

1.6

Circuit Description

Input Circuit
The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with
hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into
the necessary form for driving the power output stages. The inputs are protected by ESD
clamp-diodes.
The inputs IL1 and IL2 are connected to the gates of the standard N-channel vertical
power-MOS-FETs.

Output Stages
The output stages consist of an low

DS ON

Power-MOS H-bridge. In H-bridge

configuration, the D-MOS body diodes can be used for freewheeling when commutating
inductive loads. If the high-side switches are used as single switches, positive and
negative voltage spikes which occur when driving inductive loads are limited by
integrated power clamp diodes.

Short Circuit Protection
The outputs are protected against
output short circuit to ground
overload (load short circuit).
An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-Voltage-
Drop with an internal reference voltage. Above this trippoint the OP-Amp reduces the
output current depending on the junction temperature and the drop voltage.
In the case of overloaded high-side switches the status output is set to low.

Overtemperature Protection
The high-side switches incorporate an overtemperature protection circuit with hysteresis
which switches off the output transistors and sets the status output to low.

Undervoltage-Lockout (UVLO)
When

reaches the switch-on voltage

UVON

the IC becomes active with a hysteresis.

The High-Side output transistors are switched off if the supply voltage

drops below

the switch off value

UVOFF.

BTS 7700 G

Data Sheet

2001-02-01

Status Flag
The status flag output is an open drain output with Zener-diode which requires a pull-up
resistor, c.f. the application circuit on page 14. Various errors as listed in the table
"Diagnosis" are detected by switching the open drain output ST to low. A open load
detection is not available. Freewheeling condition does not cause an error.

Truthtable and Diagnosis (valid only for the High-Side-Switches)

Flag

IH1

IH2

SH1

SH2

ST Remarks

Inputs

Outputs

Normal operation;
identical with functional truth table

0
0
1
1

0
1
0
1

L
L
H
H

L
H
L
H

1
1
1
1

stand-by mode
switch2 active
switch1 active
both switches
active

Overtemperature high-side switch1

0
1

X
X

L
L

X
X

1
0

detected

Overtemperature high-side switch2

X
X

0
1

X
X

L
L

1
0

detected

Overtemperature both high-side switches

0
X
1

0
1
X

L
L
L

1
0
0

detected
detected

Undervoltage

not detected

Inputs:

Outputs:

Status:

0 = Logic LOW

Z = Output in tristate condition

1 = No error

1 = Logic HIGH

L = Output in sink condition

0 = Error

X = don't care

H = Output in source condition

X = Voltage level undefined

BTS 7700 G

Data Sheet

2001-02-01

Electrical Characteristics

3.1

Absolute Maximum Ratings
40

C <

< 150

Parameter

Symbol

Limit Values Unit Remarks

min.

max.

High-Side-Switches (Pins DHVS, IH1,2 and SH1,2)

Supply voltage

0.3

Supply voltage for full short
circuit protection

S(SCP)

HS-drain current*

= 25°C;

< 100 ms

HS-input current

Pin IH1 and IH2

HS-input voltage

Pin IH1 and IH2

Note: * single pulse ** internally limited

Status Output ST

Status pull up voltage

0.3

5.4

Status Output current

Pin ST

Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2)

Drain- source break down
voltage

DSL

= 0 V;

1 mA

LS-drain current*

= 25°C

< 100 ms

< 10 ms

< 1 ms

LS-input voltage

Pin IL1 and IL2

Note: * single pulse

Temperatures

Junction temperature

150

Storage temperature

stg

150

BTS 7700 G

Data Sheet

2001-02-01

Note: Maximum ratings are absolute ratings; exceeding any one of these values may

cause irreversible damage to the integrated circuit.

Note: In the operating range the functions given in the circuit description are fulfilled.

Thermal Resistances (one HS-LS-Path active)

LS-junction case

thjC L

K/W measured to pin 3 or 12

HS-junction case

thjC H

K/W measured to pin 19

Junction ambient

thja

= T

j(HS)

/(P

(HS)

(LS)

)

thja

K/W device soldered to

reference PCB with
6 cm

cooling area

ESD Protection (Human Body Model acc. MIL STD 883D, method 3015.7 and EOS/
ESD assn. standard S5.1 - 1993)

Input LS-Switch

ESD

0.5

Input HS-Switch

ESD

Status HS-Switch

ESD

Output LS and HS-Switch

ESD

all other pins connected
to Ground

3.2

Operating Range
40

C <

< 150

Parameter

Symbol

Limit Values Unit

Remarks

min.

max.

Supply voltage

UVOFF

After

rising

above

UVON

Input voltages HS

0.3

Input voltages LS

0.3

Output current

Junction temperature

150

3.1

Absolute Maximum Ratings (cont'd)
40

C <

< 150

Parameter

Symbol

Limit Values Unit Remarks

min.

max.

BTS 7700 G

Data Sheet

2001-02-01

3.3

Electrical Characteristics

SH1

SH2

SL1

SL2

= 0 A; 40

C <

< 150

C; 8 V <

< 18 V

unless otherwise specified
Parameter

Symbol

Limit Values

Unit Test Condition

min.

typ.

max.

Current Consumption HS-switch

Quiescent current

IH1 = IH2 = 0 V

= 25

IH1 = IH2 = 0 V

Supply current

IH1 or IH2 = 5 V

= 12 V

IH1 and IH2 = 5 V

= 12 V

Leakage current of
highside switch

SH LK

= 0 V

Leakage current through
logic GND in free wheeling
condition

LKCL

= 3 A

Current Consumption LS-switch

Input current

100

= 20 V;

DSL

= 0 V

= 25

Leakage current of lowside
switch

DL LK

= 0 V

DSL

= 40 V

Under Voltage Lockout (UVLO) HS-switch

Switch-ON voltage

UVON

4.5

increasing

Switch-OFF voltage

UVOFF

1.8

3.2

decreasing

Switch ON/OFF hysteresis

UVHY

UVON

UVOFF

BTS 7700 G

Data Sheet

2001-02-01

Output stages

Inverse diode of high-side
switch; Forward-voltage

0.8

1.2

= 3A

Inverse diode of lowside
switch; Forward-voltage

0.8

1.2

= 3 A

Static drain-source
on-resistance of highside
switch

DS ON H

110

140

= 1 A

= 25

Static drain-source
on-resistance of lowside
switch

DS ON L

110

= 1 A;

= 5 V

= 25

Static path on-resistance

DS ON

480

DS ON H

+ R

DS ON L

= 1 A;

Short Circuit of highside switch to GND

Initial peak SC current

SCP H

= 40 °C

Initial peak SC current

SCP H

7.5

= + 25 °C

Initial peak SC current

SCP H

5.5

= + 150 °C

Short Circuit of highside switch to

Output pull-down-resistor

DSL

= 3 V

Thermal Shutdown

Thermal shutdown junction
temperature

j SD

155

180

190

Thermal switch-on junction
temperature

j SO

150

170

180

Temperature hysteresis

jSD

jSO

3.3

Electrical Characteristics (cont'd)

SH1

SH2

SL1

SL2

= 0 A; 40

C <

< 150

C; 8 V <

< 18 V

unless otherwise specified
Parameter

Symbol

Limit Values

Unit Test Condition

min. typ.

max.

BTS 7700 G

Data Sheet

2001-02-01

Status Flag Output ST of highside switch

Low output voltage

ST L

0.2

0.6

= 1.6 mA

Leakage current

ST LK

= 5 V

Zener-limit-voltage

ST Z

5.4

= 1.6 mA

Switching times of highside switch

Turn-ON-time;
to 90%

160

Load

= 12

= 12 V

Turn-OFF-time;
to 10%

OFF

160

Load

= 12

= 12 V

Slew rate on 10 to 30%

dV/dt

1.7

s R

Load

= 12

= 12 V

Slew rate off 70 to 40%

-dV/
dt

OFF

2.5

s R

Load

= 12

= 12 V

Note: switching times are guaranteed by design

Switching times of low-side switch

Turn-ON delay time;

= 5V;

= 16

d_ON_L

resistive load

= 3 A;

= 30 V

Switch-ON time;

= 5V;

= 16

ON_L

resistive load

= 3 A;

= 30 V

Switch-OFF delay time;

= 5V;

= 16

d_OFF_L

resistive load

= 3 A;

= 30 V

Switch-OFF time;

= 5V;

= 16

OFF_L

resistive load

= 3 A;

= 30 V

3.3

Electrical Characteristics (cont'd)

SH1

SH2

SL1

SL2

= 0 A; 40

C <

< 150

C; 8 V <

< 18 V

unless otherwise specified
Parameter

Symbol

Limit Values

Unit Test Condition

min.

typ.

max.

BTS 7700 G

Data Sheet

2001-02-01

Note: The listed characteristics are ensured over the operating range of the integrated

circuit. Typical characteristics specify mean values expected over the production
spread. If not otherwise specified, typical characteristics apply at

= 25

C and

the given supply voltage.

Gate charge of lowside switch

Input to source charge;

1.5

2.3

= 3 A;

= 14 V

Input to drain charge;

= 3 A;

= 14 V

Input charge total;

= 3 A;

= 14 V

= 0 to 10 V

Input plateau voltage;

(plateau)

3.1

= 3 A;

= 14 V

Note: switching times and input charges are guaranteed by design

Control Inputs of highside switches IH 1, 2

H-input voltage

IH High

2.5

L-input voltage

IH Low

Input voltage hysterese

IH HY

0.3

H-input current

IH High

= 5 V

L-input current

IH Low

= 0.4 V

Input series resistance

2.7

5.5

Zener limit voltage

IH Z

5.4

= 1.6 mA

Control Inputs IL1, 2

Gate-threshold-voltage

IL th

0.9

1.7

2.2

= 0.5 mA

3.3

Electrical Characteristics (cont'd)

SH1

SH2

SL1

SL2

= 0 A; 40

C <

< 150

C; 8 V <

< 18 V

unless otherwise specified
Parameter

Symbol

Limit Values

Unit Test Condition

min. typ.

max.

BTS 7700 G

Data Sheet

2001-02-01

Figure 3
Test Circuit

HS-Source-Current

Named during Short
Circuit

Named during Leakage-
Cond.

SH1,2

SCP H

DL LK

SH2

DHVS

IL1

GND

IH1

SL2

5,10,19,24

20,21

16,17

Biasing and Protection

22,23

1,3,25,28

IH2

IL2

26,27

12,14,15,18

SL1

DL2

SH1

DL1

GND

LKCL

=12V

100µF

470nF

FH1,2

SH2

DL2

SH1

DL1

DL LK 2

DL LK 1

DSL1

-V

FL1

DSL2

-V

FL2

-V

FH2

DSH2

-V

FH1

DSH1

UVON

UVOFF

SL2

SL1

SCP L 1

SCP L 2

IL2

IL th 2

IL1

IL th 1

STL

STZ

IH1

IH2

Gate

Driver

Gate

Driver

Diagnosis

ST LK

IH1

IL1

IL2

BTS 7700 G

Data Sheet

2001-02-01

Figure 4
Application Circuit

SH2

DHVS

IL1

GND

IH1

SL2

5,10,19,24

20,21

16,17

TLE

4278G

=12V

D01
Z39

10µF

47nF

Reset

Watchdog

22µF

WD R

GND

µP

Biasing and Protection

22,23

1,3,25,28

IH2

IL2

26,27

12,14,15,18

SL1

DL2

SH1

DL1

100 k

10 k

Gate

Driver

Gate

Driver

Diagnosis

BTS 7700 G

Data Sheet

2001-02-01

Package Outlines

18.1

-0.4

Index Marking

2.45

-0.1

7.6

10.3

±0.3

-0.2

0.2

2.65 max

-0.2

1.27

0.23

+0.09

0.1

0.4

0.35 x 45°

+0.8

+0.15

0.35

8° max

0.2 28x

2) Does not include dambar protrusion of 0.05 max per side

1) Does not include plastic or metal protrusions of 0.15 max rer side

GPS05123

P-DSO-28-14
(Plastic Transistor Single Outline Package)

051

Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book "Package Information".

Dimensions in mm

SMD = Surface Mounted Device

BTS 7700 G

Data Sheet

2001-02-01

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address
list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the

failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life

support devices or systems are intended to be implanted in the human body, or to support and/or maintain and

sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other

persons may be endangered.

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