SKP10N60A, SKB10N60A
SKW10N60A
1
Sep-02
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
75% lower E
off
compared to previous generation
combined with low conduction losses
Short circuit withstand time 10
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel EmCon diode
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
V
CE(sat)
T
j
Package
Ordering Code
SKP10N60A
600V
10A
2.3V
150
C
TO-220AB
Q67040-S4458
SKB10N60A
TO-263AB
Q67040-S4459
SKW10N60A
TO-247AC
Q67040-S4506
Maximum Ratings
Value
Parameter
Symbol
SKP10N60A
SKB10N60A
SKW10N60A
Unit
Collector-emitter voltage
V
C E
600
V
DC collector current
T
C
= 25
C
T
C
= 100
C
I
C
20
10.6
Pulsed collector current, t
p
limited by T
jmax
I
C p u l s
40
Turn off safe operating area
V
CE
600V, T
j
150
C
-
40
Diode forward current
T
C
= 25
C
T
C
= 100
C
I
F
21
10
Diode pulsed current, t
p
limited by T
jmax
I
F p u l s
42
A
Gate-emitter voltage
V
G E
20
V
Short circuit withstand time
1)
V
GE
= 15V, V
CC
600V, T
j
150
C
t
S C
10
s
Power dissipation
T
C
= 25
C
P
t o t
92
W
Operating junction and storage temperature
T
j
, T
s t g
-55...+150
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D-PAK)
(TO-263AB)
G
C
E
P-TO-247-3-1
(TO-247AC)
SKP10N60A, SKB10N60A
SKW10N60A
2
Sep-02
Thermal Resistance
Max. Value
Parameter
Symbol
Conditions
SKP10N60A
SKB10N60A
SKW10n60A
Unit
Characteristic
IGBT thermal resistance,
junction case
R
t h J C
1.35
Diode thermal resistance,
junction case
R
t h J C D
2.4
Thermal resistance,
junction ambient
R
t h J A
TO-220AB
TO-247AC
62
40
SMD version, device on PCB
1)
R
t h J A
TO-263AB
40
K/W
Electrical Characteristic, at T
j
= 25
C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
Typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
( B R ) C E S
V
G E
=0V, I
C
=500
A
600
-
-
Collector-emitter saturation voltage
V
C E ( s a t )
V
G E
= 15V, I
C
=10A
T
j
=25
C
T
j
=150
C
1.7
-
2
2.3
2.4
2.8
Diode forward voltage
V
F
V
G E
=0V, I
F
=10A
T
j
=25
C
T
j
=150
C
1.2
-
1.4
1.25
1.8
1.65
V
Gate-emitter threshold voltage
V
G E ( t h )
I
C
=300
A,V
C E
=V
G E
3
4
5
Zero gate voltage collector current
I
C E S
V
C E
=600V,V
G E
=0V
T
j
=25
C
T
j
=150
C
-
-
-
-
40
1500
A
Gate-emitter leakage current
I
G E S
V
C E
=0V,V
G E
=20V
-
-
100
nA
Transconductance
g
f s
V
C E
=20V, I
C
=10A
-
6.7
-
S
Dynamic Characteristic
Input capacitance
C
i s s
-
550
660
Output capacitance
C
o s s
-
62
75
Reverse transfer capacitance
C
r s s
V
C E
=25V,
V
G E
=0V,
f=1MHz
-
42
51
pF
Gate charge
Q
G a t e
V
C C
=480V, I
C
=10A
V
G E
=15V
-
52
68
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
T O-220AB
T O-247AC
-
-
7
13
-
-
nH
Short circuit collector current
2)
I
C ( S C )
V
G E
=15V,t
S C
10
s
V
C C
600V,
T
j
150
C
-
100
-
A
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
m thick) copper area for collector connection. PCB is
vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
SKP10N60A, SKB10N60A
SKW10N60A
3
Sep-02
Switching Characteristic, Inductive Load, at T
j
=25
C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t
d ( o n )
-
28
34
Rise time
t
r
-
12
15
Turn-off delay time
t
d ( o f f )
-
178
214
Fall time
t
f
-
24
29
ns
Turn-on energy
E
o n
-
0.15
0.173
Turn-off energy
E
o f f
-
0.17
0.221
Total switching energy
E
t s
T
j
=25
C,
V
C C
=400V,I
C
=10A,
V
G E
=0/15V,
R
G
=25
,
L
1 )
=180nH,
C
1 )
=55pF
Energy losses include
"tail" and diode
reverse recovery.
-
0.320
0.394
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r r
t
S
t
F
-
-
-
220
20
200
-
-
-
ns
Diode reverse recovery charge
Q
r r
-
310
-
nC
Diode peak reverse recovery current
I
r r m
-
4.5
-
A
Diode peak rate of fall of reverse
recovery current during t
b
di
r r
/dt
T
j
=25
C,
V
R
=200V, I
F
=10A,
di
F
/dt=200A/
s
-
180
-
A/
s
Switching Characteristic, Inductive Load, at T
j
=150
C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t
d ( o n )
-
28
34
Rise time
t
r
-
12
15
Turn-off delay time
t
d ( o f f )
-
198
238
Fall time
t
f
-
26
32
ns
Turn-on energy
E
o n
-
0.260
0.299
Turn-off energy
E
o f f
-
0.280
0.364
Total switching energy
E
t s
T
j
=150
C
V
C C
=400V,I
C
=10A,
V
G E
=0/15V,
R
G
=25
L
1 )
=180nH,
C
1 )
=55pF
Energy losses include
"tail" and diode
reverse recovery.
-
0.540
0.663
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r r
t
S
t
F
-
-
-
350
36
314
-
-
-
ns
Diode reverse recovery charge
Q
r r
-
690
-
nC
Diode peak reverse recovery current
I
r r m
-
6.3
-
A
Diode peak rate of fall of reverse
recovery current during t
b
di
r r
/dt
T
j
=150
C
V
R
=200V, I
F
=10A,
di
F
/dt=200A/
s
-
200
-
A/
s
1)
Leakage inductance L
and Stray capacity C
due to dynamic test circuit in Figure E.
SKP10N60A, SKB10N60A
SKW10N60A
4
Sep-02
I
C
,
COLLE
CT
OR CURRE
N
T
10Hz 100Hz
1kHz
10kHz 100kHz
0A
10A
20A
30A
40A
50A
T
C
=110c
T
C
=80c
I
C
,
COLLE
CT
OR CURRE
N
T
1 V
1 0 V
1 0 0 V
1 0 0 0 V
0 ,1 A
1 A
1 0 A
1 5
s
D C
1 m s
2 0 0
s
5 0
s
t
p
= 5
s
f,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(T
j
150
C, D = 0.5, V
CE
= 400V,
V
GE
= 0/+15V, R
G
= 25
)
Figure 2. Safe operating area
(D = 0, T
C
= 25
C, T
j
150
C)
P
tot
,
PO
W
E
R
D
I
SS
IP
AT
IO
N
2 5 C
5 0 C
7 5 C
1 0 0 C
1 2 5 C
0 W
2 0 W
4 0 W
6 0 W
8 0 W
1 0 0 W
1 2 0 W
I
C
,
COLLE
CT
OR CURRE
NT
2 5C
5 0C
7 5C
1 00 C
1 25 C
0A
5A
1 0A
1 5A
2 0A
2 5A
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
150
C)
Figure 4. Collector current as a function of
case temperature
(V
GE
15V, T
j
150
C)
I
c
I
c
SKP10N60A, SKB10N60A
SKW10N60A
5
Sep-02
I
C
,
COLLE
CT
OR CURRE
N
T
0 V
1 V
2 V
3 V
4 V
5 V
0 A
5 A
1 0 A
1 5 A
2 0 A
2 5 A
3 0 A
3 5 A
1 5 V
1 3 V
1 1 V
9 V
7 V
5 V
V
G E
= 2 0 V
I
C
,
COLLE
CT
OR CURRE
N
T
0 V
1 V
2 V
3 V
4 V
5 V
0 A
5 A
1 0 A
1 5 A
2 0 A
2 5 A
3 0 A
3 5 A
1 5 V
1 3 V
1 1 V
9 V
7 V
5 V
V
G E
= 2 0 V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25
C)
Figure 6. Typical output characteristics
(T
j
= 150
C)
I
C
,
COLLE
CT
OR CURRE
NT
0V
2V
4V
6V
8V
10V
0A
5A
10A
15A
20A
25A
30A
35A
+150C
T
j
=+25C
V
CE(sat)
,
COLLE
CT
OR
-
EM
ITT
E
R
SATU
R
A
TI
O
N
VO
L
T
AG
E
0C
50C
100C
150C
1,5V
2,0V
2,5V
3,0V
3,5V
I
C
= 2 0 A
I
C
= 1 0 A
I
C
= 5 A
V
GE
,
GATE
-
EMITTER VOLTAGE
T
j
,
JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(V
CE
= 10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
PDF 
ZIP