Microsoft Word - SKW25N120.doc
SKW25N120
Power Semiconductors
1
Jul-02
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
40lower E
off
compared to previous generation
Short circuit withstand time 10
s
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
E
off
T
j
Package
Ordering Code
SKW25N120
1200V
25A
2.9mJ
150
C
TO-247AC
Q67040-S4282
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
C E
1200
V
DC collector current
T
C
= 25
C
T
C
= 100
C
I
C
46
25
Pulsed collector current, t
p
limited by T
jmax
I
C p u l s
84
Turn off safe operating area
V
CE
1200V, T
j
150
C
-
84
Diode forward current
T
C
= 25
C
T
C
= 100
C
I
F
42
25
Diode pulsed current, t
p
limited by T
jmax
I
F p u l s
80
A
Gate-emitter voltage
V
G E
20
V
Short circuit withstand time
1)
V
GE
= 15V, 100V
V
CC
1200V, T
j
150
C
t
S C
10
s
Power dissipation
T
C
= 25
C
P
t o t
313
W
Operating junction and storage temperature
T
j
, T
s t g
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
P-TO-247-3-1
(TO-247AC)
SKW25N120
Power Semiconductors
2
Jul-02
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction case
R
t h J C
0.4
Diode thermal resistance,
junction case
R
t h J C D
1.15
Thermal resistance,
junction ambient
R
t h J A
TO-247AC
40
K/W
Electrical Characteristic, at T
j
= 25
C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
( B R ) C E S
V
G E
=0V,
I
C
=1500
A
1200
-
-
Collector-emitter saturation voltage
V
C E ( s a t )
V
G E
= 15V, I
C
=25A
T
j
=25
C
T
j
=150
C
2.5
-
3.1
3.7
3.6
4.3
Diode forward voltage
V
F
V
G E
=0V, I
F
=25A
T
j
=25
C
T
j
=150
C
-
2.0
1.75
2.5
Gate-emitter threshold voltage
V
G E ( t h )
I
C
=1000
A,
V
C E
=V
G E
3
4
5
V
Zero gate voltage collector current
.
I
C E S
V
CE
=1200V,V
GE
=0V
T
j
=25
C
T
j
=150
C
-
-
-
-
350
1400
A
Gate-emitter leakage current
I
G E S
V
CE
=0V,V
GE
=20V
-
-
100
nA
Transconductance
g
f s
V
C E
=20V, I
C
=25A
20
-
S
Dynamic Characteristic
Input capacitance
C
i s s
-
2150
2600
Output capacitance
C
o s s
-
260
310
Reverse transfer capacitance
C
r s s
V
C E
=25V,
V
G E
=0V,
f=1MHz
-
110
130
pF
Gate charge
Q
G a t e
V
C C
=960V, I
C
=25A
V
G E
=15V
-
225
300
nC
Internal emitter inductance
Measured 5mm (0.197 in.) from case
L
E
T O-247AC
-
13
-
NH
Short circuit collector current
1)
I
C ( S C )
V
G E
=15V,t
S C
10
s
100V
V
C C
1200V,
T
j
150
C
-
240
-
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s
SKW25N120
Power Semiconductors
3
Jul-02
Switching Characteristic, Inductive Load, at T
j
=25
C
Value
Parameter
Symbol
Conditions
Min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t
d ( o n )
-
45
60
Rise time
t
r
-
40
52
Turn-off delay time
t
d ( o f f )
-
730
950
Fall time
t
f
-
30
39
ns
Turn-on energy
E
o n
-
2.2
2.9
Turn-off energy
E
o f f
-
1.5
2.0
Total switching energy
E
t s
T
j
=25
C,
V
C C
=800V,I
C
=25A,
V
G E
=15/0V,
R
G
=22
,
L
1 )
=180nH,
C
1 )
=40pF
Energy losses include
"tail" and diode
reverse recovery.
-
3.7
4.9
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r r
t
S
t
F
-
-
-
90
ns
Diode reverse recovery charge
Q
r r
-
1.0
C
Diode peak reverse recovery current
I
r r m
-
20
A
Diode peak rate of fall of reverse
recovery current during t
F
di
r r
/dt
T
j
=25
C,
V
R
=800V, I
F
=25A,
di
F
/dt=650A/
s
-
470
A/
s
Switching Characteristic, Inductive Load, at T
j
=150
C
Value
Parameter
Symbol
Conditions
Min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
t
d ( o n )
-
50
60
Rise time
t
r
-
36
43
Turn-off delay time
t
d ( o f f )
-
820
990
Fall time
t
f
-
42
50
ns
Turn-on energy
E
o n
-
3.8
4.6
Turn-off energy
E
o f f
-
2.9
3.8
Total switching energy
E
t s
T
j
=150
C
V
C C
=800V,I
C
=25A,
V
G E
=15/0V,
R
G
=22
,
L
1 )
=180nH,
C
1 )
=40pF
Energy losses include
"tail" and diode
reverse recovery.
-
6.7
8.4
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
r r
t
S
t
F
-
-
-
280
ns
Diode reverse recovery charge
Q
r r
-
4.3
C
Diode peak reverse recovery current
I
r r m
-
32
A
Diode peak rate of fall of reverse
recovery current during t
F
di
r r
/dt
T
j
=150
C
V
R
=800V, I
F
=25A,
di
F
/dt=750A/
s
-
130
A/
s
1)
Leakage inductance L
and stray capacity C
due to dynamic test circuit in figure E.
SKW25N120
Power Semiconductors
4
Jul-02
I
C
,
COLLE
CT
OR CURRE
NT
10Hz
100Hz
1kHz
10kHz
100kHz
0A
20A
40A
60A
80A
100A
T
C
=110C
T
C
=80C
I
C
,
COLLE
CT
OR CURRE
NT
1V
10V
100V
1000V
0.1A
1A
10A
100A
DC
1ms
200
s
50
s
15
s
t
p
=1
s
f,
SWITCHING FREQUENCY
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(T
j
150
C, D = 0.5, V
CE
= 800V,
V
GE
= +15V/0V, R
G
= 22
)
Figure 2. Safe operating area
(D = 0, T
C
= 25
C, T
j
150
C)
P
tot
,
PO
W
E
R
D
I
SS
IP
AT
IO
N
25C
50C
75C
100C
125C
0W
50W
100W
150W
200W
250W
300W
350W
I
C
,
COLLE
CT
OR CURRE
N
T
25C
50C
75C
100C
125C
0A
10A
20A
30A
40A
50A
60A
T
C
,
CASE TEMPERATURE
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
150
C)
Figure 4. Collector current as a function of
case temperature
(V
GE
15V, T
j
150
C)
I
c
I
c
SKW25N120
Power Semiconductors
5
Jul-02
I
C
,
COLLE
CT
OR CURRE
NT
0V
1V
2V
3V
4V
5V
6V
7V
0A
10A
20A
30A
40A
50A
60A
70A
80A
15V
13V
11V
9V
7V
V
G E
=17V
I
C
,
COLLE
CT
OR CURRE
NT
0V
1V
2V
3V
4V
5V
6V
7V
0A
10A
20A
30A
40A
50A
60A
70A
80A
15V
13V
11V
9V
7V
V
G E
=17V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25
C)
Figure 6. Typical output characteristics
(T
j
= 150
C)
I
C
,
COLLE
CT
OR CURRE
N
T
3V
4V
5V
6V
7V
8V
9V 10V 11V
0A
10A
20A
30A
40A
50A
60A
70A
80A
T
j
=-40C
T
j
=+150C
T
j
=+25C
V
CE(sat)
,
COLLE
CTOR
-
EM
ITT
E
R
SATU
R
ATI
O
N
VO
L
T
AG
E
-50C
0C
50C
100C
150C
0V
1V
2V
3V
4V
5V
6V
I
C
=50A
I
C
=25A
I
C
=12.5A
V
GE
,
GATE
-
EMITTER VOLTAGE
T
j
,
JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics
(V
CE
= 20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
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