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Электронный компонент: SMBT2222A

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SMBT2222A/ MMBT2222A
1
Feb-18-2002
NPN Silicon Switching Transistor
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type: SMBT2907A (PNP)
1
2
3
VPS05161
Type
Marking
Pin Configuration
Package
SMBT2222A/ MMBT2222A
s1P
1=B
2=E
3=C
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
40
V
Collector-base voltage
V
CBO
75
Emitter-base voltage
V
EBO
6
DC collector current
I
C
600
mA
Total power dissipation
,
T
S
= 77 C
P
tot
330
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
220
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
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SMBT2222A/ MMBT2222A
2
Feb-18-2002
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
V
(BR)CEO
40
-
-
V
Collector-base breakdown voltage
I
C
= 10 A,
I
E
= 0
V
(BR)CBO
75
-
-
Emitter-base breakdown voltage
I
E
= 10 A,
I
C
= 0
V
(BR)EBO
6
-
-
Collector cutoff current
V
CB
= 60 V,
I
E
= 0
I
CBO
-
-
10
nA
Collector cutoff current
V
CB
= 60 V,
I
E
= 0 ,
T
A
= 150 C
I
CBO
-
-
10
A
Emitter cutoff current
V
EB
= 3 V,
I
C
= 0
I
EBO
-
-
10
nA
DC current gain 1)
I
C
= 100 A,
V
CE
= 10 V
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 150 mA,
V
CE
= 1 V
I
C
= 150 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V, T
A
= 55C
h
FE
35
50
75
50
100
40
35
-
-
-
-
-
-
-
-
-
-
-
300
-
-
-
Collector-emitter saturation voltage1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
V
CEsat
-
-
-
-
0.3
1
V
Base-emitter saturation voltage 1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
V
BEsat
0.6
-
-
-
1.2
2
1) Pulse test: t
=
300
s, D = 2%
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SMBT2222A/ MMBT2222A
3
Feb-18-2002
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 20 V,
f
= 100 MHz
f
T
300
-
-
MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
-
-
8
pF
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
C
eb
-
-
25
Noise figure
I
C
= 100 A,
V
CE
= 10 V,
R
S
= 1
k
,
f
= 1 kHz,
f
= 200
Hz
F
-
-
4
dB
Short-circuit input impedance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
h
11e
2
0.25
-
-
8
1.25
k
Open-circuit reverse voltage transf.ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
h
12e
-
-
-
-
8
4
10
-4
Short-circuit forward current transf.ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
h
21e
50
75
-
-
300
375
-
Open-circuit output admittance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
h
22e
5
25
-
-
35
200
S
Delay time
V
CC
= 30 V,
I
C
= 150 mA,
I
B1
= 15 mA,
V
BE(off)
= 0.5 V
t
d
-
-
10
ns
Rise time
V
CC
= 30 V,
I
C
= 150 mA,
I
B1
= 15 mA,
V
BE(off)
= 0.5 V
t
r
-
-
25
Storage time
V
CC
= 30 V,
I
C
= 150 mA, I
B1
=I
B2
= 15mA
t
stg
-
-
225
ns
Fall time
V
CC
= 30 V,
I
C
= 150 mA, I
B1
=
IB2 = 15mA
t
f
-
-
60
ns
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SMBT2222A/ MMBT2222A
4
Feb-18-2002
Test circuits
Delay and rise time
EHN00055
200
Osc.
619
30
9.9
0
0.5
V
V
V
Storage and fall time
EHN00056
200
Osc.
1
30
16.2
0
-13.8
-3.0
500
~
s
s
~100
< 5 ns
V
V
V
V
k
Oscillograph
: R > 100
, C < 12pF, t
r
< 5ns
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SMBT2222A/ MMBT2222A
5
Feb-18-2002
Collector-base capacitance
C
CB
= f (V
CB
)
f
= 1MHz
EHP00739
SMBT 2222/A
10
pF
10
10
V
C
CB
10
5
10
cb
5
5
-1
0
1
2
10
2
1
10
0
5
V
Total power dissipation
P
tot
= f(T
S
)
0
15
30
45
60
75
90 105 120
C
150
T
S
0
30
60
90
120
150
180
210
240
270
300
mW
360
P
tot
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00740
SMBT 2222/A
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
D
T
t
p
T
tot max
tot
P
DC
P
p
t
Transition frequency
f
T
= f (I
C
)
V
CE
= 20V
EHP00741
SMBT 2222/A
10
10
10
mA
f
C
10
MHz
10
T
5
5
5
0
1
2
3
10
3
2
10
1
5
2
2