www.docs.chipfind.ru
2004-03-30
Rev. 2.1
Page 1
SPP03N60S5
SPB03N60S5
Cool MOSTM
Power Transistor
V
DS
600
V
R
DS(on)
1.4
I
D
3.2
A
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO220-3-1
P-TO263-3-2
2
P-TO220-3-1
2 3
1
Type
Package
Ordering Code
SPP03N60S5
P-TO220-3-1
Q67040-S4184
SPB03N60S5
P-TO263-3-2
Q67040-S4197
Marking
03N60S5
03N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
T
C
= 25 C
T
C
= 100 C
I
D
3.2
2
A
Pulsed drain current, t
p
limited by T
jmax
I
D puls
5.7
Avalanche energy, single pulse
I
D
= 2.4 A, V
DD
= 50 V
E
AS
100
mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
1)
I
D
= 3.2 A, V
DD
= 50 V
E
AR
0.2
Avalanche current, repetitive t
AR
limited by T
jmax
I
AR
3.2
A
Gate source voltage
V
GS
20
V
Gate source voltage AC (f >1Hz)
V
GS
30
Power dissipation,
T
C
= 25C
P
tot
38
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
2004-03-30
Rev. 2.1
Page 2
SPP03N60S5
SPB03N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V, I
D
= 3.2 A, T
j
= 125 C
dv/dt
20
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
R
thJC
-
-
3.3
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
3)
T
sold
-
-
260
C
Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V
(BR)DSS V
GS
=0V, I
D
=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V, I
D
=3.2A
-
700
-
Gate threshold voltage
V
GS(th)
I
D
=135
, V
GS
=V
DS
3.5
4.5
5.5
Zero gate voltage drain current
I
DSS
V
DS
=600V, V
GS
=0V,
T
j
=25C,
T
j
=150C
-
-
0.5
-
1
70
A
Gate-source leakage current
I
GSS
V
GS
=20V, V
DS
=0V
-
-
100
nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=2A,
T
j
=25C
T
j
=150C
-
-
1.26
3.4
1.4
-
2004-03-30
Rev. 2.1
Page 3
SPP03N60S5
SPB03N60S5
Electrical Characteristics , at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
g
fs
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
=2A
-
1.8
-
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f
=1MHz
-
420
-
pF
Output capacitance
C
oss
-
150
-
Reverse transfer capacitance
C
rss
-
3.6
-
Turn-on delay time
t
d(on)
V
DD
=350V, V
GS
=0/10V,
I
D
=3.2A, R
G
=20
-
35
ns
Rise time
t
r
-
25
-
Turn-off delay time
t
d(off)
-
40
Fall time
t
f
-
15
22.5
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=350V, I
D
=3.2A
-
3.5
-
nC
Gate to drain charge
Q
gd
-
7
-
Gate charge total
Q
g
V
DD
=350V, I
D
=3.2A,
V
GS
=0 to 10V
-
12.4
16
Gate plateau voltage
V
(plateau)
V
DD
=350V, I
D
=3.2A
-
8
-
V
1Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
3Soldering temperature for TO-263: 220C, reflow
2004-03-30
Rev. 2.1
Page 4
SPP03N60S5
SPB03N60S5
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
I
S
T
C
=25C
-
-
3.2
A
Inverse diode direct current,
pulsed
I
SM
-
-
5.7
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=350V, I
F
=I
S
,
di
F
/dt
=100A/s
-
1000
1700 ns
Reverse recovery charge
Q
rr
-
2.3
-
C
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
Thermal resistance
R
th1
0.054
K/W
R
th2
0.103
R
th3
0.178
R
th4
0.757
R
th5
0.682
R
th6
0.202
Thermal capacitance
C
th1
0.00005232
Ws/K
C
th2
0.0002034
C
th3
0.0002963
C
th4
0.0009103
C
th5
0.002084
C
th6
0.024
External H eatsink
T
j
T
case
T
am b
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2004-03-30
Rev. 2.1
Page 5
SPP03N60S5
SPB03N60S5
1 Power dissipation
P
tot
= f (T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
4
8
12
16
20
24
28
32
W
40
SPP03N60S5
P
tot
2 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
=25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter: D = t
p
/T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
4 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25C
parameter: t
p
= 10 s, V
GS
0
5
10
15
V
25
V
DS
0
1
2
3
4
5
6
7
8
A
10
I
D
7V
7.5V
8V
8.5V
9V
10V
6.5V
20V
12V
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