2004-04-07
Rev. 2.1
Page 1
SPP07N60C3, SPB07N60C3
SPI07N60C3, SPA07N60C3
Cool MOSTM
Power Transistor
V
DS
@ T
jmax
650
V
R
DS(on)
0.6
I
D
7.3
A
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO262-3-1
P-TO220-3-1
P-TO220-3-31
P-TO263-3-2
2
P-TO220-3-1
2 3
1
P-TO220-3-31
1
2
3
Marking
07N60C3
07N60C3
07N60C3
07N60C3
Type
Package
Ordering Code
SPP07N60C3
P-TO220-3-1
Q67040-S4400
SPB07N60C3
P-TO263-3-2
Q67040-S4394
SPI07N60C3
P-TO262-3-1
Q67040-S4424
SPA07N60C3
P-TO220-3-31 Q67040-S4409
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP_B_I
SPA
Continuous drain current
T
C
= 25 C
T
C
= 100 C
I
D
7.3
4.6
7.3
1)
4.6
1)
A
Pulsed drain current, t
p
limited by T
jmax
I
D puls
21.9
21.9
A
Avalanche energy, single pulse
I
D
=5.5A,
V
DD
=50V
E
AS
230
230
mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
2)
I
D
=7.3A,
V
DD
=50V
E
AR
0.5
0.5
Avalanche current, repetitive t
AR
limited by T
jmax
I
AR
7.3
7.3
A
Gate source voltage static
V
GS
20
20
V
Gate source voltage AC (f >1Hz)
V
GS
30
30
Power dissipation,
T
C
= 25C
P
tot
83
32
W
Operating and storage temperature
T
j ,
T
stg
-55...+150
C
2004-04-07
Rev. 2.1
Page 2
SPP07N60C3, SPB07N60C3
SPI07N60C3, SPA07N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V, I
D
= 7.3 A, T
j
= 125 C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
R
thJC
-
-
1.5
K/W
Thermal resistance, junction - case, FullPAK
R
thJC_FP
-
-
3.9
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
R
thJA_FP
-
-
80
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
C
Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V
(BR)DSS V
GS
=0V, I
D
=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V, I
D
=7.3A
-
700
-
Gate threshold voltage
V
GS(th)
I
D
=350
A, VGS=VDS
2.1
3
3.9
Zero gate voltage drain current
I
DSS
V
DS
=600V, V
GS
=0V,
T
j
=25C
T
j
=150C
-
-
0.5
-
1
100
A
Gate-source leakage current
I
GSS
V
GS
=30V, V
DS
=0V
-
-
100
nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=4.6A
T
j
=25C
T
j
=150C
-
-
0.54
1.46
0.6
-
Gate input resistance
R
G
f=1MHz, open drain
-
0.8
-
2004-04-07
Rev. 2.1
Page 3
SPP07N60C3, SPB07N60C3
SPI07N60C3, SPA07N60C3
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=4.6A
-
6
-
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f
=1MHz
-
790
-
pF
Output capacitance
C
oss
-
260
-
Reverse transfer capacitance
C
rss
-
16
-
Effective output capacitance,
4)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
-
30
-
Effective output capacitance,
5)
time related
C
o(tr)
-
55
-
Turn-on delay time
t
d(on)
V
DD
=380V, V
GS
=0/13V,
I
D
=7.3A, R
G
=12
,
T
j
=125C
-
6
-
ns
Rise time
t
r
-
3.5
-
Turn-off delay time
t
d(off)
-
60
100
Fall time
t
f
-
7
15
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=480V, I
D
=7.3A
-
3
-
nC
Gate to drain charge
Q
gd
-
9.2
-
Gate charge total
Q
g
V
DD
=480V, I
D
=7.3A,
V
GS
=0 to 10V
-
21
27
Gate plateau voltage
V
(plateau)
V
DD
=480V, I
D
=7.3A
-
5.5
-
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
4C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
5C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
2004-04-07
Rev. 2.1
Page 4
SPP07N60C3, SPB07N60C3
SPI07N60C3, SPA07N60C3
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
I
S
T
C
=25C
-
-
7.3
A
Inverse diode direct current,
pulsed
I
SM
-
-
21.9
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=480V, I
F
=I
S
,
di
F
/dt
=100A/s
-
400
600
ns
Reverse recovery charge
Q
rr
-
4
-
C
Peak reverse recovery current
I
rrm
-
28
-
A
Peak rate of fall of reverse
recovery current
di
rr
/dt
T
j
=25C
-
800
-
A/s
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPP_B_I
SPA
SPP_B_I
SPA
R
th1
0.024
0.024
K/W
C
th1
0.00012
0.00012
Ws/K
R
th2
0.046
0.046
C
th2
0.0004578
0.0004578
R
th3
0.085
0.085
C
th3
0.000645
0.000645
R
th4
0.308
0.195
C
th4
0.001867
0.001867
R
th5
0.317
0.45
C
th5
0.004795
0.007558
R
th6
0.112
2.511
C
th6
0.045
0.412
External H eatsink
T
j
T
case
T
am b
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2004-04-07
Rev. 2.1
Page 5
SPP07N60C3, SPB07N60C3
SPI07N60C3, SPA07N60C3
1 Power dissipation
P
tot
= f (T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
10
20
30
40
50
60
70
80
W
100
SPP07N60C3
P
tot
2 Power dissipation FullPAK
P
tot
= f (T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
4
8
12
16
20
24
28
W
34
P
tot
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
=25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
4 Safe operating area FullPAK
I
D
= f (V
DS
)
parameter: D = 0, T
C
= 25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
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