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Электронный компонент: SPB20N60S5

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2004-03-30
Rev. 2.1
Page 1
SPP20N60S5
SPB20N60S5
Cool MOSTM
Power Transistor
V
DS
600
V
R
DS(on)
0.19
I
D
20
A
Feature
 New revolutionary high voltage technology
Worldwide best R
DS(on)
in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO220-3-1
P-TO263-3-2
2
P-TO220-3-1
2 3
1
Type
Package
Ordering Code
SPP20N60S5
P-TO220-3-1
Q67040-S4751
SPB20N60S5
P-TO263-3-2
Q67040-S4171
Marking
20N60S5
20N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Continuous drain current
T
C
= 25 C
T
C
= 100 C
I
D
20
13
A
Pulsed drain current, t
p
limited by T
jmax
I
D puls
40
Avalanche energy, single pulse
I
D
= 10 A, V
DD
= 50 V
E
AS
690
mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
1)
I
D
= 20 A, V
DD
= 50 V
E
AR
1
Avalanche current, repetitive t
AR
limited by T
jmax
I
AR
20
A
Gate source voltage
V
GS
20
V
Gate source voltage AC (f >1Hz)
V
GS
30
Power dissipation,
T
C
= 25C
P
tot
208
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
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2004-03-30
Rev. 2.1
Page 2
SPP20N60S5
SPB20N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V, I
D
= 20 A, T
j
= 125 C
dv/dt
20
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
R
thJC
-
-
0.6
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
-
-
260
C
Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V,
I
D
=20A
-
700
-
Gate threshold voltage
V
GS(th)
I
D
=1000
, V
GS
=V
DS
3.5
4.5
5.5
Zero gate voltage drain current
I
DSS
V
DS
=600V, V
GS
=0V,
T
j
=25C,
T
j
=150C
-
-
0.5
-
5
250
A
Gate-source leakage current
I
GSS
V
GS
=20V, V
DS
=0V
-
-
100
nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V,
I
D
=13A,
T
j
=25C
T
j
=150C
-
-
0.16
0.43
0.19
-
Gate input resistance
R
G
f
=1MHz, open Drain
-
12
-
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2004-03-30
Rev. 2.1
Page 3
SPP20N60S5
SPB20N60S5
Electrical Characteristics , at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
g
fs
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
=13A
-
12
-
S
Input capacitance
C
iss
V
GS
=0V, V
DS
=25V,
f
=1MHz
-
3000
-
pF
Output capacitance
C
oss
-
1170
-
Reverse transfer capacitance
C
rss
-
28
-
Effective output capacitance,
3)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
-
83
-
pF
Effective output capacitance,
4)
time related
C
o(tr)
-
160
-
Turn-on delay time
t
d(on)
V
DD
=350V, V
GS
=0/10V,
I
D
=20A, R
G
=5.7
-
120
-
ns
Rise time
t
r
-
25
-
Turn-off delay time
t
d(off)
-
140
210
Fall time
t
f
-
30
45
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=350V, I
D
=20A
-
21
-
nC
Gate to drain charge
Q
gd
-
47
-
Gate charge total
Q
g
V
DD
=350V, I
D
=20A,
V
GS
=0 to 10V
-
79
103
Gate plateau voltage
V
(plateau)
V
DD
=350V, I
D
=20A
-
8
-
V
1Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
3C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
4C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
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2004-03-30
Rev. 2.1
Page 4
SPP20N60S5
SPB20N60S5
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
I
S
T
C
=25C
-
-
20
A
Inverse diode direct current,
pulsed
I
SM
-
-
40
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=350V, I
F
=I
S
,
di
F
/dt
=100A/s
-
610
-
ns
Reverse recovery charge
Q
rr
-
12
-
C
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
Thermal resistance
R
th1
0.00769
K/W
R
th2
0.015
R
th3
0.029
R
th4
0.114
R
th5
0.136
R
th6
0.059
Thermal capacitance
C
th1
0.0003763
Ws/K
C
th2
0.001411
C
th3
0.001931
C
th4
0.005297
C
th5
0.012
C
th6
0.091
External H eatsink
T
j
T
case
T
am b
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
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2004-03-30
Rev. 2.1
Page 5
SPP20N60S5
SPB20N60S5
1 Power dissipation
P
tot
= f (T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
20
40
60
80
100
120
140
160
180
200
W
240
SPP20N60S5
P
tot
2 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
=25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A

I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter: D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25C
parameter: t
p
= 10 s, V
GS
0
5
10
15
20
V
30
V
DS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
75

I
D
10V
9V
8V
7V
20V
15V
12V
11V
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2004-03-30
Rev. 2.1
Page 6
SPP20N60S5
SPB20N60S5
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=150C
parameter: t
p
= 10 s, V
GS
0
5
10
15
V
25
V
DS
0
5
10
15
20
25
A
35

I
D
6V
6.5V
7V
7.5V
8V
8.5V
9V
20V
12V
10V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
)
parameter: T
j
=150C, V
GS
0
5
10
15
20
25
30
A
40
I
D
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
m
1.5
R
DS(on)
6V
6.5V
7V
7.5V
8V
8.5V
9V
10V
12V
20V
7 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 13 A, V
GS
= 10 V
-60
-20
20
60
100
C
180
T
j
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
SPP20N60S5
R
DS(on)
typ
98%
8 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 10 s
0
5
10
V
20
V
GS
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70

I
D
25C
150C
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2004-03-30
Rev. 2.1
Page 7
SPP20N60S5
SPB20N60S5
9 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: I
D
= 20 A pulsed
0
20
40
60
80
nC
120
Q
Gate
0
2
4
6
8
10
12
V
16
SPP20N60S5
V
GS
0.2 V
DS max
0.8 V
DS max
10 Forward characteristics of body diode
I
F
= f (V
SD
)
parameter: Tj , t
p
= 10 s
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-1
10
0
10
1
10
2
10
A
SPP20N60S5
I
F
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)
11 Avalanche SOA
I
AR
= f (t
AR
)
par.: T
j
150 C
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
AR
0
5
10
A
20
I
AR
T
j(START)
=25C
T
j(START)
=125C
12 Avalanche energy
E
AS
= f (T
j
)
par.: I
D
= 10 A, V
DD
= 50 V
20
40
60
80
100
120
C
160
T
j
0
50
100
150
200
250
300
350
400
450
500
550
600
mJ
750
E
AS
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2004-03-30
Rev. 2.1
Page 8
SPP20N60S5
SPB20N60S5
13 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60
-20
20
60
100
C
180
T
j
540
560
580
600
620
640
660
680
V
720
SPP20N60S5
V
(BR)DSS
14 Avalanche power losses
P
AR
= f (f )
parameter: E
AR
=1mJ
10
4
10
5
10
6
Hz
f
0
100
200
300
W
500

P
AR
15 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0V, f=1 MHz
0
100
200
300
400
V
600
V
DS
0
10
1
10
2
10
3
10
4
10
5
10
pF

C
C
iss
C
oss
C
rss
16 Typ. C
oss
stored energy
E
oss
=f(V
DS
)
0
100
200
300
400
V
600
V
DS
0
1
2
3
4
5
6
7
8
9
10
11
12
J
14

E
oss
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2004-03-30
Rev. 2.1
Page 9
SPP20N60S5
SPB20N60S5
Definition of diodes switching characteristics
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2004-03-30
Rev. 2.1
Page 10
SPP20N60S5
SPB20N60S5
P-TO-220-3-1
A
B
A
0.25
M
2.8
15.38
0.6
2.54
0.75
0.1
0.13
1.27
4.44
B
9.98
0.48
0.05
All metal surfaces tin plated, except area of cut.
C
0.2
10
0.4
3.7
C
0.5
0.1
0.9
5.23
13.5
0.5
3x
Metal surface min. x=7.25, y=12.3
2x
0.2
0.22
1.17
0.2
2.51
P-TO-263-3-2 (D
2
-PAK)
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2004-03-30
Rev. 2.1
Page 11
SPP20N60S5
SPB20N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.