2003-10-02
Page 1
SPP03N60C3, SPB03N60C3
SPA03N60C3
Final data
Cool MOSTM
Power Transistor
V
DS
@
T
jmax
650
V
R
DS(on)
1.4
I
D
3.2
A
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31
P-TO263-3-2
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
03N60C3
03N60C3
03N60C3
Type
Package
Ordering Code
SPP03N60C3
P-TO220-3-1
Q67040-S4401
SPB03N60C3
P-TO263-3-2
Q67040-S4391
SPA03N60C3
P-TO220-3-31 -
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 C
T
C
= 100 C
I
D
3.2
2
3.2
1)
2
1)
A
Pulsed drain current,
t
p
limited by
T
jmax
I
D puls
9.6
9.6
A
Avalanche energy, single pulse
I
D
=2.4A,
V
DD
=50V
E
AS
100
100
mJ
Avalanche energy, repetitive t
AR
limited by
T
jmax
2)
I
D
=3.2A,
V
DD
=50V
E
AR
0.2
0.2
Avalanche current, repetitive t
AR
limited by
T
jmax
I
AR
3.2
3.2
A
Gate source voltage static
V
GS
20
20
V
Gate source voltage AC (f >1Hz)
V
GS
30
30
Power dissipation,
T
C
= 25C
P
tot
38
29.7
W
SPP_B
Operating and storage temperature
T
j ,
T
stg
-55...+150
C
2003-10-02
Page 2
SPP03N60C3, SPB03N60C3
SPA03N60C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V, I
D
= 3.2 A,
T
j
= 125 C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
R
thJC
-
-
3.3
K/W
Thermal resistance, junction - case, FullPAK
R
thJC_FP
-
-
4.1
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
R
thJA_FP
-
-
80
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
4)
T
sold
-
-
260
C
Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage
V
(BR)DSS V
GS
=0V, I
D
=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V, I
D
=3.2A
-
700
-
Gate threshold voltage
V
GS(th)
I
D
=135
A, VGS=VDS
2.1
3
3.9
Zero gate voltage drain current
I
DSS
V
DS
=600V,
V
GS
=0V,
T
j
=25C
T
j
=150C
-
-
0.5
-
1
70
A
Gate-source leakage current
I
GSS
V
GS
=30V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=2A
T
j
=25C
T
j
=150C
-
-
1.26
3.8
1.4
-
Gate input resistance
R
G
f=1MHz, open drain
-
10
-
2003-10-02
Page 3
SPP03N60C3, SPB03N60C3
SPA03N60C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=2A
-
3.4
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
400
-
pF
Output capacitance
C
oss
-
150
-
Reverse transfer capacitance
C
rss
-
5
-
Effective output capacitance,
5)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
-
12
-
Effective output capacitance,
6)
time related
C
o(tr)
-
26
-
Turn-on delay time
t
d(on)
V
DD
=350V,
V
GS
=0/10V,
I
D
=3.2A,
R
G
=20
-
7
-
ns
Rise time
t
r
-
3
-
Turn-off delay time
t
d(off)
-
64
100
Fall time
t
f
-
12
20
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=420V, I
D
=3.2A
-
2
-
nC
Gate to drain charge
Q
gd
-
6
-
Gate charge total
Q
g
V
DD
=420V, I
D
=3.2A,
V
GS
=0 to 10V
-
13
17
Gate plateau voltage
V
(plateau)
V
DD
=420V, I
D
=3.2A
-
5.5
-
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as P
AV
=
E
AR
*
f
.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220C, reflow
5C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80% V
DSS
.
6C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80% V
DSS
.
2003-10-02
Page 4
SPP03N60C3, SPB03N60C3
SPA03N60C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
I
S
T
C
=25C
-
-
3.2
A
Inverse diode direct current,
pulsed
I
SM
-
-
9.6
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=420V, I
F
=I
S
,
di
F
/dt
=100A/s
-
250
400
ns
Reverse recovery charge
Q
rr
-
1.8
-
C
Peak reverse recovery current
I
rrm
-
15
-
A
Peak rate of fall of reverse
recovery current
di
rr
/dt
T
j
=25C
-
-
-
A/s
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPA
SPA
R
th1
0.054
0.054
K/W
C
th1
0.00005232 0.00005232 Ws/K
R
th2
0.103
0.103
C
th2
0.0002034
0.0002034
R
th3
0.178
0.178
C
th3
0.0002963
0.0002963
R
th4
0.757
0.356
C
th4
0.0009103
0.0009103
R
th5
0.682
0.655
C
th5
0.002084
0.004434
R
th6
0.202
2.535
C
th6
0.024
0.412
SPP_B
SPP_B
External H eatsink
T
j
T
case
T
am b
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2003-10-02
Page 5
SPP03N60C3, SPB03N60C3
SPA03N60C3
Final data
1 Power dissipation
P
tot
= f (
T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
4
8
12
16
20
24
28
32
W
40
SPP03N60C3
P
tot
2 Power dissipation FullPAK
P
tot
= f (
T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
2
4
6
8
10
12
14
16
18
20
22
24
W
30
P
tot
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
C
=25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
4 Safe operating area FullPAK
I
D
= f (
V
DS
)
parameter: D = 0,
T
C
= 25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
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