2003-10-02
Page 1
SPP04N60C3, SPB04N60C3
SPA04N60C3
Final data
Cool MOSTM
Power Transistor
V
DS
@
T
jmax
650
V
R
DS(on)
0.95
I
D
4.5
A
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31
P-TO263-3-2
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
04N60C3
04N60C3
04N60C3
Type
Package
Ordering Code
SPP04N60C3
P-TO220-3-1
Q67040-S4366
SPB04N60C3
P-TO263-3-2
Q67040-S4407
SPA04N60C3
P-TO220-3-31 Q67040-S4413
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 C
T
C
= 100 C
I
D
4.5
2.8
4.5
1)
2.8
1)
A
Pulsed drain current,
t
p
limited by
T
jmax
I
D puls
13.5
13.5
A
Avalanche energy, single pulse
I
D
=3.4,
V
DD
=50V
E
AS
130
130
mJ
Avalanche energy, repetitive t
AR
limited by
T
jmax
2)
I
D
=4.5A,
V
DD
=50V
E
AR
0.4
0.4
Avalanche current, repetitive t
AR
limited by
T
jmax
I
AR
4.5
4.5
A
Gate source voltage static
V
GS
20
20
V
Gate source voltage AC (f >1Hz)
V
GS
30
30
Power dissipation,
T
C
= 25C
P
tot
50
31
W
SPP_B
Operating and storage temperature
T
j ,
T
stg
-55...+150
C
2003-10-02
Page 2
SPP04N60C3, SPB04N60C3
SPA04N60C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
V
DS
= 480 V, I
D
= 4.5 A,
T
j
= 125 C
dv/dt
50
V/ns
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Thermal resistance, junction - case
R
thJC
-
-
2.5
K/W
Thermal resistance, junction - case, FullPAK
R
thJC_FP
-
-
4
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
R
thJA_FP
-
-
80
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
35
62
-
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
4)
T
sold
-
-
260
C
Electrical Characteristics, at Tj=25C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Drain-source breakdown voltage
V
(BR)DSS V
GS
=0V, I
D
=0.25mA
600
-
-
V
Drain-Source avalanche
breakdown voltage
V
(BR)DS
V
GS
=0V, I
D
=4.5A
-
700
-
Gate threshold voltage
V
GS(th)
I
D
=200
A, VGS=VDS
2.1
3
3.9
Zero gate voltage drain current
I
DSS
V
DS
=600V,
V
GS
=0V,
T
j
=25C
T
j
=150C
-
-
0.5
-
1
50
A
Gate-source leakage current
I
GSS
V
GS
=30V,
V
DS
=0V
-
-
100
nA
Drain-source on-state resistance R
DS(on)
V
GS
=10V, I
D
=2.8A
T
j
=25C
T
j
=150C
-
-
0.85
2.3
0.95
-
Gate input resistance
R
G
f=1MHz, open drain
-
0.95
-
2003-10-02
Page 3
SPP04N60C3, SPB04N60C3
SPA04N60C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=2.8A
-
4.4
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
490
-
pF
Output capacitance
C
oss
-
160
-
Reverse transfer capacitance
C
rss
-
15
-
Effective output capacitance,
5)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
-
20
-
Effective output capacitance,
6)
time related
C
o(tr)
-
35
-
Turn-on delay time
t
d(on)
V
DD
=380V,
V
GS
=0/10V,
I
D
=4.5A,
R
G
=18
-
6
-
ns
Rise time
t
r
-
2.5
-
Turn-off delay time
t
d(off)
-
58.5
80
Fall time
t
f
-
9.5
14
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=480V, I
D
=4.5A
-
2.2
-
nC
Gate to drain charge
Q
gd
-
8.8
-
Gate charge total
Q
g
V
DD
=480V, I
D
=4.5A,
V
GS
=0 to 10V
-
19
25
Gate plateau voltage
V
(plateau)
V
DD
=480V, I
D
=4.5A
-
5
-
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as P
AV
=
E
AR
*
f
.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220C, reflow
5C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80% V
DSS
.
6C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80% V
DSS
.
2003-10-02
Page 4
SPP04N60C3, SPB04N60C3
SPA04N60C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
forward current
I
S
T
C
=25C
-
-
4.5
A
Inverse diode direct current,
pulsed
I
SM
-
-
13.5
Inverse diode forward voltage
V
SD
V
GS
=0V, I
F
=I
S
-
1
1.2
V
Reverse recovery time
t
rr
V
R
=480V, I
F
=I
S
,
di
F
/dt
=100A/s
-
300
500
ns
Reverse recovery charge
Q
rr
-
2.6
-
C
Peak reverse recovery current
I
rrm
-
18
-
A
Peak rate of fall of reverse
recovery current
di
rr
/dt
T
j
=25C
-
900
-
A/s
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPA
SPA
R
th1
0.039
0.039
K/W
C
th1
0.00007347 0.00007347 Ws/K
R
th2
0.074
0.074
C
th2
0.0002831
0.0002831
R
th3
0.132
0.132
C
th3
0.0004062
0.0004062
R
th4
0.555
0.272
C
th4
0.001215
0.001215
R
th5
0.529
0.559
C
th5
0.00276
0.005633
R
th6
0.169
2.523
C
th6
0.029
0.412
SPP_B
SPP_B
External H eatsink
T
j
T
case
T
am b
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2003-10-02
Page 5
SPP04N60C3, SPB04N60C3
SPA04N60C3
Final data
1 Power dissipation
P
tot
= f (
T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
5
10
15
20
25
30
35
40
45
W
55
SPP04N60C3
P
tot
2 Power dissipation FullPAK
P
tot
= f (
T
C
)
0
20
40
60
80
100
120
C
160
T
C
0
5
10
15
20
25
W
35
P
tot
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
C
=25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
4 Safe operating area FullPAK
I
D
= f (
V
DS
)
parameter: D = 0,
T
C
= 25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10ms
DC
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