2003-05-09
Page 1
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
Opti
MOS
Power-Transistor
Product Summary
V
DS
30
V
R
DS(on)
max. SMD version
3.1
m
I
D
80
A
Feature
N-Channel
Enhancement mode
Excellent Gate Charge x R
DS(on)
product (FOM)
Superior thermal resistance
175C operating temperature
Avalanche rated
dv/dt rated
P- TO263 -3-2
P- TO262 -3-1
P- TO220 -3-1
Marking
2N0303
2N0303
2N0303
Type
Package
Ordering Code
SPP80N03S2-03
P- TO220 -3-1 Q67040-S4247
SPB80N03S2-03
P- TO263 -3-2 Q67040-S4258
SPI80N03S2-03
P- TO262 -3-1 Q67042-S4079
Maximum Ratings, at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
1)
T
C
=25C
I
D
80
80
A
Pulsed drain current
T
C
=25C
I
D puls
320
Avalanche energy, single pulse
I
D
=80 A ,
V
DD
=25V,
R
GS
=25
E
AS
810
mJ
Repetitive avalanche energy, limited by T
jmax
2)
E
AR
30
Reverse diode dv/dt
I
S
=80A,
V
DS
=24V,
di/dt=200A/s, T
jmax
=175C
dv/dt
6
kV/s
Gate source voltage
V
GS
20
V
Power dissipation
T
C
=25C
P
tot
300
W
Operating and storage temperature
T
j ,
T
stg
-55... +175
C
IEC climatic category; DIN IEC 68-1
55/175/56
2003-05-09
Page 2
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
0.3
0.5
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
-
62
40
Electrical Characteristics, at
T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=1mA
V
(BR)DSS
30
-
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=250A
V
GS(th)
2.1
3
4
Zero gate voltage drain current
V
DS
=30V,
V
GS
=0V,
T
j
=25C
V
DS
=30V,
V
GS
=0V,
T
j
=125C
I
DSS
-
-
0.01
1
1
100
A
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
I
GSS
-
1
100
nA
Drain-source on-state resistance
4)
V
GS
=10V, I
D
=80A
V
GS
=10V, I
D
=80A,
SMD version
R
DS(on)
-
-
2.6
2.3
3.4
3.1
m
1Current limited by bondwire ; with an R
thJC
= 0.5K/W the chip is able to carry I
D
= 307A at 25C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70
m thick) copper area for
drain connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
2003-05-09
Page 3
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=80A
66
132
-
S
Input capacitance
C
iss
V
GS
=0V,
V
DS
=25V,
f=1MHz
-
5280 7020 pF
Output capacitance
C
oss
-
2420 3220
Reverse transfer capacitance
C
rss
-
470
700
Turn-on delay time
t
d(on)
V
DD
=15V,
V
GS
=10V,
I
D
=80A,
R
G
=2.2
-
22
33
ns
Rise time
t
r
-
325
490
Turn-off delay time
t
d(off)
-
90
140
Fall time
t
f
-
110
160
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=24V, I
D
=80A
-
26
34
nC
Gate to drain charge
Q
gd
-
45
68
Gate charge total
Q
g
V
DD
=24V, I
D
=80A,
V
GS
=0 to 10V
-
110
150
Gate plateau voltage
V
(plateau) V
DD
= 24 V , I
D
=80A
-
5.2
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25C
-
-
80
A
Inv. diode direct current, pulsed
I
SM
-
-
320
Inverse diode forward voltage
V
SD
V
GS
=0V,
I
F
=80A
-
0.9
1.3
V
Reverse recovery time
t
rr
V
R
=15V,
I
F=
l
S
,
di
F
/dt=100A/s
-
65
80
ns
Reverse recovery charge
Q
rr
-
87
110 nC
2003-05-09
Page 4
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
1 Power dissipation
P
tot
= f (
T
C
)
parameter: V
GS
6 V
0
20
40
60
80 100 120 140 160
C
190
T
C
0
40
80
120
160
200
240
W
320
SPP80N03S2-03
P
tot
2 Drain current
I
D
= f (
T
C
)
parameter: V
GS
10 V
0
20
40
60
80 100 120 140 160
C
190
T
C
0
10
20
30
40
50
60
70
A
90
SPP80N03S2-03
I
D
4 Max. transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
SPP80N03S2-03
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
C
= 25 C
10
-1
10
0
10
1
10
2
V
V
DS
1
10
2
10
3
10
A
SPP80N03S2-03
I
D
R
DS(on)
=
V
DS
/
I
D
1 ms
100 s
t
p = 16.0s
2003-05-09
Page 5
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
5 Typ. output characteristic
I
D
= f (
V
DS
);
T
j
=25C
parameter: t
p
= 80 s
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
V
DS
0
20
40
60
80
100
120
140
160
A
190
SPP80N03S2-03
I
D
VGS [V]
a
a
4.0
b
b
4.2
c
c
4.4
d
d
4.6
e
e
4.8
f
f
5.0
g
g
5.2
h
h
5.4
i
P
tot
= 300W
i
10.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter:
V
GS
0
20
40
60
80
100
120
A
150
I
D
0
1
2
3
4
5
6
7
8
9
10
m
12
SPP80N03S2-03
R
DS(on)
V
GS
[V] =
c
c
4.4
d
d
4.6
e
e
4.8
f
f
5.0
g
g
5.2
h
h
5.4
i
i
10.0
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 80 s
0
1
2
3
4
5
V
7
V
GS
0
40
80
120
160
200
240
A
320
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25C
parameter:
g
fs
0
40
80
120
160
A
240
I
D
0
20
40
60
80
100
120
140
S
180
g
fs
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