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Электронный компонент: 5962-9163401MPA

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1
HA-5221/883
Low Noise, Wideband,
Precision Operational Amplifier
Description
The HA-5221/883 is a high performance, dielectrically isolated,
monolithic op amp, featuring precision DC characteristics while
providing excellent AC characteristics. Designed for audio,
video, and other demanding applications, noise (3.6nV/
Hz at
1kHz typ), total harmonic distortion (<0.005% typ), and DC
errors are kept to a minimum.
The precision performance is shown by low offset voltage
(0.3mV typ), low bias currents (40nA typ), low offset currents
(15nA typ), and high open loop gain (128dB typ). The combi-
nation of these excellent DC characteristics with fast settling
time (0.4
s typ) make the HA-5221/883 ideally suited for
precision signal conditioning.
The unique design of the HA-5221/883 gives this device out-
standing AC characteristics, including high unity gain band-
width (40MHz typ) and high slew rate (37V/
s typ), not
normally associated with precision op amps. Other key spec-
ifications include high CMRR (95dB typ) and high PSRR
(100dB typ). The combination of these specifications will
allow the HA-5221/883 to be used in RF signal conditioning
as well as video amplifiers.
Ordering Information
OBSOLETE
PART
NUMBER
SMD NO.
TEMP
RANGE
(
o
C)
PACKAGE
HA4-5221/883 5962-9163401M2A
-55 to 125 20 Ld CLCC
HA7-5221/883 5962-9163401MPA -55 to 125 8 Ld CERDIP
Features
This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
Gain Bandwidth Product . . . . . . . . . . . . . .100MHz (Min)
Unity Gain Bandwidth . . . . . . . . . . . . . . . . .30MHz (Min)
40MHz (Typ)
High Slew Rate . . . . . . . . . . . . . . . . . . . . . . .25V/
s (Min)
37V/
s (Typ)
Low Offset Voltage . . . . . . . . . . . . . . . . . .0.75mV (Max)
0.30mV (Typ)
High Open Loop Gain . . . . . . . . . . . . . . . . . 106dB (Min)
128dB (Typ)
Low Voltage Noise (at 1kHz) . . . . . . . . .5.8nV/
Hz (Max)
3.6nV/
Hz (Typ)
Low Current Noise (at 1kHz) . . . . . . . . 2.0pA/
Hz (Max)
1.4pA/
Hz (Typ)
High Output Current . . . . . . . . . . . . . . . . .
30mA (Min)
56mA (Typ)
Low Supply Current. . . . . . . . . . . . . . . . . . . 10mA (Max)
8mA (Typ)
Applications
Precision Test Systems
Active Filtering
Small Signal Video
Accurate Signal Processing
RF Signal Conditioning
October 1999
File Number
3716.1
Pinouts
HA-5221/883
(CERDIP)
TOP VIEW
HA-5221/883
(CLCC)
TOP VIEW
1
2
3
4
8
7
6
5
+
OUT
NC
V+
V-
+ BAL
-
-BAL
+IN
-IN
4
5
6
7
8
9 10 11 12 13
3
2
1 20 19
15
14
18
17
16
NC
NC
NC
NC
NC
NC
OUT
NC
NC
NC
NC
NC
NC
+
NC
V-
+IN
-IN
V+
-
BAL
-
+BAL
/883
Vers
ion O
bsol
ete
Repl
ace w
ith E
quiv
alen
t SM
D De
vice
(See
"Ord
ering
Info
rmat
ion"
Tabl
e Be
low)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002. All Rights Reserved
or co
ntac
t our
Tec
hnic
al Su
ppor
t Cen
ter a
t
1-88
8-INT
ERS
IL or
www
.inte
rsil.c
om/t
sc
2
HA-5221/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . 36V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal. . . . . . . . . . . . . . . . . . . . . . V+ to V-
Peak Output Current (Pulsed at 1ms, 10% Duty Cycle). . . . . 100mA
Continuous Output Current. . . . . . . . . . . . . . Short Circuit Protected
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Resistance
JA
JC
CerDIP Package . . . . . . . . . . . . . . . . . . .
110
o
C/W
27
o
C/W
Ceramic LCC Package . . . . . . . . . . . . . .
64
o
C/W
13
o
C/W
Metal Can Package . . . . . . . . . . . . . . . . .
148
o
C/W
67
o
C/W
Package Power Dissipation Limit at +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91W
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56W
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Package Power Dissipation Derating Factor Above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.1mW/
o
C
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.6mW/
o
C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.8mW/
o
C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . .
10V to
15V
V
INCM
1/2 (V+ - V-)
R
L
1k
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
15V, R
LOAD
= 1k
, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Offset Voltage
V
IO
V
CM
= 0V
1
+25
o
C
-0.75
0.75
mV
2, 3
+125
o
C, -55
o
C
-1.5
1.5
mV
Input Bias Current
+I
B
V
CM
= 0V,
+R
S
= 100.1k
,
-R
S
= 100
1
+25
o
C
-80
80
nA
2, 3
+125
o
C, -55
o
C
-200
200
nA
-I
B
V
CM
= 0V, +R
S
= 100
,
-R
S
= 100.1k
1
+25
o
C
-80
80
nA
2, 3
+125
o
C, -55
o
C
-200
200
nA
Input Offset Current
I
IO
V
CM
= 0V,
+R
S
= 100.1k
,
-R
S
= 100.1k
1
+25
o
C
-50
50
nA
2, 3
+125
o
C, -55
o
C
-150
150
nA
Common Mode Range
+CMR
V+ = +3V, V- = -27V
1
+25
o
C
12
-
V
2, 3
+125
o
C, -55
o
C
12
-
V
-CMR
V+ = +27V, V- = -3V
1
+25
o
C
-
-12
V
2, 3
+125
o
C, -55
o
C
-
-12
V
Large Signal Voltage
Gain
+A
VOL
V
OUT
= 0V and +10V
4
+25
o
C
106
-
dB
5, 6
+125
o
C, -55
o
C
100
-
dB
-A
VOL
V
OUT
= 0V and -10V
4
+25
o
C
106
-
dB
5, 6
+125
o
C, -55
o
C
100
-
dB
Common Mode
Rejection Ratio
+CMRR
V
CM
= +10V,
V+ = +5V, V- = -25V,
V
OUT
= -10V
1
+25
o
C
88
-
dB
2, 3
+125
o
C, -55
o
C
86
-
dB
-CMRR
V
CM
= -10V,
V+ = +25V, V- = -5V,
V
OUT
= +10V
1
+25
o
C
88
-
dB
2, 3
+125
o
C, -55
o
C
86
-
dB
Output Voltage Swing
+V
OUT
R
L
= 1k
4
+25
o
C
12.0
-
V
5, 6
+125
o
C, -55
o
C
11.5
-
V
-V
OUT
R
L
= 1k
4
+25
o
C
-
-12.0
V
5, 6
+125
o
C, -55
o
C
-
-11.5
V
3
HA-5221/883HA-5221/883
Output Current
+I
OUT
V
OUT
= +10V, R
L
= 1k
4
+25
o
C
30
-
mA
5, 6
+125
o
C, -55
o
C
30
-
mA
-I
OUT
V
OUT
= -10V, R
L
= 1k
4
+25
o
C
-
-30
mA
5, 6
+125
o
C, -55
o
C
-
-30
mA
Quiescent Power Supply
Current
+I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
+25
o
C
-
10
mA
2, 3
+125
o
C, -55
o
C
-
11
mA
-I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
+25
o
C
-10
-
mA
2, 3
+125
o
C, -55
o
C
-11
-
mA
Power Supply
Rejection Ratio
+PSRR
V
SUP
= 10V,
V+ = +20V, V- = -15V,
V+ = +10V, V- = -15V
1
+25
o
C
90
-
dB
2, 3
+125
o
C, -55
o
C
86
-
dB
-PSRR
V
SUP
= 10V,
V+ = +15V, V- = -20V,
V+ = +15V, V- = -10V
1
+25
o
C
90
-
dB
2, 3
+125
o
C, -55
o
C
86
-
dB
Offset Voltage
Adjustment
+V
IO
Adj
Note 1
1
+25
o
C
V
IO
-1
-
mV
2, 3
+125
o
C, -55
o
C
V
IO
-1
-
mV
-V
IO
Adj
Note 1
1
+25
o
C
V
IO
+1
-
mV
2, 3
+125
o
C, -55
o
C
V
IO
+1
-
mV
NOTE:
1. Offset adjustment range is [V
IO
(Measured
1mV] minimum referred to output. This test is for functionality only to assure adjustment
through 0V.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC specifications in Table 3.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
15V, R
LOAD
= 1k
, C
LOAD
= 50pF, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input Noise Voltage
Density
E
N
R
S
= 0
, f
O
= 10Hz
1, 5
+25
o
C
-
24.0
nV
/
Hz
R
S
= 0
, f
O
= 100Hz
1, 5
+25
o
C
-
8.0
nV
/
Hz
R
S
= 0
, f
O
= 1kHz
1, 5
+25
o
C
-
5.8
nV
/
Hz
Input Noise Current
Density
I
N
R
S
= 500k
, f
O
= 10Hz
1, 5
+25
o
C
-
11.5
pA
/
Hz
R
S
= 500k
, f
O
= 100Hz
1, 5
+25
o
C
-
6.0
pA
/
Hz
R
S
= 500k
, f
O
= 1kHz
1, 5
+25
o
C
-
2.0
pA
/
Hz
Gain Bandwidth Product
GBWP
V
OUT
= 200mV
P-P
,
f
O
=
100kHz
1
+25
o
C
100
-
MHz
-55
o
C to +125
o
C
90
-
MHz
Unity Gain Bandwidth
UGBW
V
OUT
= 200mV
1
+25
o
C
30
-
MHz
-55
o
C to +125
o
C
25
-
MHz
Slew Rate
SR
V
OUT
=
2.5V
C
L
= 50pF
1
-55
o
C to +125
o
C
25
-
V/
s
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
15V, R
LOAD
= 1k
, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
4
HA-5221/883HA-5221/883
Full Power Bandwidth
FPBW
V
PEAK
= 10V
1, 2
-55
o
C to +125
o
C
398
-
kHz
Minimum Closed Loop
Stable Gain
CLSG
R
L
= 1k
, C
L
= 50pF
1
-55
o
C to +125
o
C
1
-
V/V
Rise and Fall Time
t
R,
t
F
V
OUT
=
100mV
1, 4
+25
o
C
-
20
ns
Overshoot
OS
V
OUT
=
100mV
1
+25
o
C
-
25
%
-55
o
C to +125
o
C
-
30
%
Power Consumption
PC
V
OUT
= 0V, I
OUT
=
0mA
1, 3
-55
o
C to +125
o
C
-
660
mW
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2
V
PEAK
).
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.).
4. Measured between 10% and 90% points.
5. Input Noise Voltage Density and Input Noise Current Density limits are based on characterization data.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 4, 5, 6
Group A Test Requirements
1, 2, 3, 4, 5, 6
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at: V
SUPPLY
=
15V, R
LOAD
= 1k
, C
LOAD
= 50pF, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
5
HA-5221/883
Die Characteristics
DIE DIMENSIONS:
72 x 94 x 19 mils
1 mils
1840 x 2400 x 483
m
25.4
m
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
2k
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)
Silox Thickness: 12k
2k
Nitride Thickness: 3.5k
1.5k
WORST CASE CURRENT DENSITY:
4.2 x 10
4
A/cm
2
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 62
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5221/883
-BAL
+BAL
V+
OUT
V-
+IN
-IN