1
File Number
3650.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
HS-2600RH
Radiation Hardened Wideband, High
Impedance Operational Amplifier
HS-2600RH is a radiation hardened internally compensated
bipolar operational amplifier that features very high input
impedance coupled with wideband AC performance. The
high resistance of the input stage is complemented by low
offset voltage (4mV
max
at 25
o
C for HS-2600RH) and low
bias and offset current (10nA max at 25
o
C for HS-2600RH)
to facilitate accurate signal processing. Offset voltage can be
reduced further by means of an external nulling
potentiometer. The 4V/
s minimum slew rate at 25
o
C and
the minimum open loop gain of 100kV/V at 25
o
C enables the
HS-2600RH to perform high gain amplification of fast,
wideband signals. These dynamic characteristics, coupled
with fast settling times, make these amplifiers ideally suited
to pulse amplification designs as well as high frequency or
video applications. The frequency response of the amplifier
can be tailored to exact design requirements by means of an
external bandwidth control capacitor. Other high
performance designs such as high gain, low distortion audio
amplifiers, high-Q and wideband active filters and high
speed comparators, are excellent uses of this part.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95671. A "hot-link" is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Features
Electrically Screened to SMD # 5962-95671
QML Qualified per MIL-PRF-38535 Requirements
High Input Impedance . . . . . . . . . . . . . . . . . 100M
(Min)
500M
(Typ)
High Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . 3V/
s (Min)
7V/
s (Typ)
Low Input Bias Current . . . . . . . . . . . . . . . . . . 10nA (Max)
1nA (Typ)
Low Input Offset Current (HS-2600RH) . . . . . . 4mV (Max)
Wide Unity Gain Bandwidth . . . . . . . . . . . . . .12MHz (Typ)
Output Short Circuit Protection
Total Gamma Dose. . . . . . . . . . . . . . . . . . . . . 10kRAD(Si)
Applications
Video Amplifier
Pulse Amplifier
High-Q Active Filters
High Speed Comparators
Low Distortion Oscillators
Pinout
HS7-2600RH (CERDIP) GDIP1-T8
OR
HS7B-2600RH (SBDIP) CDIP2-T8
TOP VIEW
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE
(
o
C)
5962D9567101VPA
HS7-2600RH-Q
-55 to 125
5962D9567101VPC
HS7B-2600RH-Q
-55 to 125
BAL
-IN
+IN
V-
1
2
3
4
8
7
6
5
COMP
V+
OUT
BAL
+
Data Sheet
August 1999
5
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
69 mils x 56 mils x 19 mils
1 mils
1750
m x 1420
m x 483
m
25.4
m
INTERFACE MATERIALS:
Glassivation:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12k
2k
Nitride Thickness: 3.5k
1.5k
Top Metallization:
Type: Al, 1% Cu
Thickness: 16k
2k
Substrate:
Linear Bipolar DI
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
Unbiased
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2 x 10
5
A/cm
2
Transistor Count:
140
Metallization Mask Layout
HS-2600RH
+IN
-IN
BAL
COMP
V+
OUT
BAL
V-
HS-2600RH
PDF 
ZIP
