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Электронный компонент: 5962F9764101VEC

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1
File Number
4425.2
HS-6254RH
Radiation Hardened Ultra High Frequency
NPN Transistor Array
The HS-6254RH is a Radiation Hardened array of five NPN
transistors on a common substrate. One of our bonded
wafer, dielectrically isolated fabrication processes provides
an immunity to Single Event Latch-up and the capability of
highly reliable performance in any radiation environment.
The high F
T
(8GHz) and low noise figure (3.5dB) of these
transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the five transistors provides the closest electrical and
thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-97641. A "hot-link" is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Pinouts
HS1-6254RH (CERDIP) GDIP1-T16 OR
HS1-6254RH (SBDIP) CDIP2-T16
TOP VIEW
HS9-6254RH (FLATPACK) CDFP4-F16
TOP VIEW
Features
Electrically Screened to SMD # 5962-97641
QML Qualified per MIL-PRF-38535 Requirements
Radiation Environment
- Gamma Dose (
) . . . . . . . . . . . . . . . . . 3 x 10
5
RAD(Si)
- SEL Immune . . . . . . . Bonded Wafer Dielectric Isolation
Gain Bandwidth Product (F
T
) . . . . . . . . . . . . . .8GHz (Typ)
Current Gain (h
FE
) . . . . . . . . . . . . . . . . . . . . . . . . 70 (Typ)
Early Voltage (V
A
). . . . . . . . . . . . . . . . . . . . . . . . 50V (Typ)
Noise Figure (50
) at 1GHz. . . . . . . . . . . . . . .3.5dB (Typ)
Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)
Applications
High Frequency Amplifiers and Mixers
- Refer to Application Note 9315
High Frequency Converters
Synchronous Detectors
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
Q1C
Q2C
Q2E
Q2B
NC
Q3C
Q3B
Q3E
Q1E
Q5B
Q5E
Q5C
Q4C
Q4E
Q4B
Q1B
Q1
Q2
Q3
Q4
Q5
Q1C
Q2C
Q2E
Q2B
NC
Q3C
Q3E
Q3B
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
Q1E
Q1B
Q5B
Q5E
Q5C
Q4C
Q4E
Q4B
Q1
Q2
Q3
Q4
Q5
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE
(
o
C)
HS0-6254RH-Q
HS0-6254RH-Q
25
5962F9764101VEA
HS1-6254RH-Q
-55 to 125
5962F9764101VEC
HS1B-6254RH-Q
-55 to 125
5962F9764101VXC
HS9-6254RH-Q
-55 to 125
HS1-6254RH/SAMPLE
HS1-6254RH/SAMPLE
-55 to 125
Data Sheet
August 1999
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
2
Burn-In Circuit
Irradiation Circuit
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
Q1
Q2
Q3
Q4
NC
1K
5%
1K
5%
1K
5%
1K
5%
1K
5%
0.01
F
100
5%
10.5V
0.5V
5.5V
0.5V
0.01
F
Q5
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
Q1
Q2
Q3
Q4
NC
1K
5%
1K
5%
1K
5%
1K
5%
1K
5%
0.01
F
100
5%
10.5V
0.5V
Q5
0.01
F
5V
0.5V
HS-6254RH
3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
52 mils x 52.8 mils x 15 mils
1 mil
1320
m x 1340
m x 381
m
25.4
m
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 4k
0.5k
Top Metallization:
Type: Metal 1: AlCu (2%)/TiW
Thickness: Metal 1: 8k
0.5k
Type: Metal 2: AlCu (2%)
Thickness: Metal 2: 16k
0.8k
Substrate:
UHF-1X Bonded Wafer, DI
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Floating
ADDITIONAL INFORMATION:
Worst Case Current Density:
3.04 x 10
5
A/cm
2
Transistor Count:
5
Metallization Mask Layout
HS-6254RH
NOTE: Pad numbers correspond to the 16 lead pinout.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
HS-6254RH