1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
March 1998
ACS240MS
Radiation Hardened
Inverting, Octal, Three-State Buffer/Line Driver
Features
QML Qualified Per MIL-PRF-38535 Requirements
1.25Micron Radiation Hardened SOS CMOS
Radiation Environment
- Latch-up Free Under any Conditions
- Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 10
5
RAD(Si)
- SEU Immunity . . . . . . . . . . . <1 x 10
-10
Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . >100MeV/(mg/cm
2
)
Input Logic Levels V
IL
= (0.3V)(V
CC
), V
IH
= (0.7V)(V
CC
)
Output Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16mA
Quiescent Supply Current. . . . . . . . . . . . . . . . . . . .20
A
Propagation Delay . . . . . . . . . . . . . . . . . . . . . . . . 11.5ns
Applications
Databus Driving
Data Routing
Redundant Data Control Circuitry
Description
The Radiation Hardened ACS240MS is an Inverting, Octal,
Three-State Buffer/Line Driver with two active-LOW Enable
inputs (AE and BE). Each Enable input controls four outputs.
When an Enable input is LOW, the corresponding outputs
are active and input signals are inverted. A HIGH on an
Enable input causes the corresponding outputs to be high
impedance, regardless of the input levels.
The ACS240MS is fabricated on a CMOS Silicon on Sap-
phire (SOS) process, which provides an immunity to Single
Event Latch-up and the capability of highly reliable perfor-
mance in any radiation environment. These devices offer
significant power reduction and faster performance when
compared to ALSTTL types.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ACS240 are
contained in SMD 5962-98540. A "hot-link" is provided
on our homepage with instructions for downloading.
http://www.intersil.com/data/sm/index.htm
Ordering Information
Pinouts
ACS240 (SBDIP)
TOP VIEW
ACS240 (FLATPACK)
TOP VIEW
SMD PART NUMBER
INTERSIL PART NUMBER
TEMP. RANGE (
o
C)
PACKAGE
CASE OUTLINE
5962F9854001VRC
ACS240DMSR-02
-55 to 125
20 Ld SBDIP
CDIP2-T20
N/A
ACS240D/Sample-02
25
20 Ld SBDIP
CDIP2-T20
5962F9854001VXC
ACS240KMSR-02
-55 to 125
20 Ld Flatpack
CDFP4-F20
N/A
ACS240K/Sample-02
25
20 Ld Flatpack
CDFP4-F20
N/A
ACS240HMSR-02
25
Die
N/A
11
12
13
14
15
16
17
18
20
19
10
9
8
7
6
5
4
3
2
1
AE
AI1
BO4
AI2
BO3
AI3
AI4
BO2
BO1
GND
V
CC
AO1
BI4
AO2
BE
BI3
AO3
BI2
AO4
BI1
2
3
4
5
6
7
8
1
20
19
18
17
16
15
14
13
9
10
12
11
AE
AI1
BO4
AI2
BO3
AI3
AI4
BO2
BO1
GND
V
CC
AO1
BI4
AO2
BE
BI3
AO3
BI2
AO4
BI1
File Number
4478
2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Die Characteristics
DIE DIMENSIONS:
Size: 2540
m x 2540
m (100 mils x 100mils)
Thickness: 525
m
25
m (20.6 mils
1 mil)
Bond Pad: 110
m x 110
m (4.3 x 4.3 mils)
METALLIZATION: Al
Metal 1 Thickness: 0.7
m
0.1
m
Metal 2 Thickness: 1.0
m
0.1
m
SUBSTRATE POTENTIAL:
Unbiased Insulator
PASSIVATION
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30
m
0.15
m
SPECIAL INSTRUCTIONS:
Bond V
CC
First
ADDITIONAL INFORMATION:
Worst Case Density: <2.0 x 10
5
A/cm
2
Transistor Count: 198
Metallization Mask Layout
ACS240MS
BO4 (3)
AI2 (4)
BO3 (5)
AI3 (6)
BO2 (7)
AI4 (8)
V
CC
BO1 (9)
AO4 (12)
(13) BI2
(14) AO3
(15) BI3
(16) AO2
(17) BI4
(18) AO1
(20)
V
CC
(20)
AE
(1)
AI1
(2)
BE
(19)
(11)
BI1
(10)
GND
(10)
GND
ACS240MS
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