1
File Number
3573.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright Intersil Corporation 1999
HS-139RH
Radiation Hardened Quad Voltage
Comparator
The Radiation Hardened HS-139RH consists of four
independent single or dual supply voltage comparators on a
single monolithic substrate. The common mode input voltage
range includes ground, even when operated from a single
supply, and the low supply current makes these comparators
suitable for low power applications. These types were
designed to directly interface with TTL and CMOS.
The HS-139RH is fabricated on our dielectrically isolated
Rad Hard Silicon Gate (RSG) process, which provides an
immunity to Single Event Latch-up and the capability of
highly reliable performance in any radiation environment.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-139RH are
contained in SMD 5962-98613. A "hot-link" is provided
on our homepage with instructions for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Features
QML Qualified Per MIL-PRF-38535 Requirements
Radiation Environment
- Latch-up Free Under any Conditions
- Total Dose (Max). . . . . . . . . . . . . . . . . . 3 x 10
5
RAD(Si)
- SEU LET Threshold . . . . . . . . . . . . . . . 20MeV/cm
2
/mg
- Low Dose Rate Effects Immunity
100V Output Voltage Withstand Capability
ESD Protection to >3000V
Differential Input Voltage Range Equal to the Supply
Voltage
Input Offset Voltage (V
IO
). . . . . . . . . . . . . . . . . 2mV (Max)
Quiescent Supply Current . . . . . . . . . . . . . . . . 2mA (Max)
Applications
Pulse Generators
Timing Circuitry
Level Shifting
Analog to Digital Conversion
Pinouts
s
HS-139RH (SBDIP CDIP2-T14)
TOP VIEW
HS-139RH (FLATPACK CDFP3-F14)
TOP VIEW
Ordering Information
ORDERING
NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE (
o
C)
5962F9861301VCC
HS1-139RH-Q
-55 to 125
5962F9861301QCC
HS1-139RH-8
-55 to 125
HS1-139RH/Proto
HS1-139RH/Proto
-55 to 125
5962F9861301VXC
HS9-139RH-Q
-55 to 125
5962F9861301QXC
HS9-139RH-8
-55 to 125
HS9-139RH/Proto
HS9-139RH/Proto
-55 to 125
OUT 2
OUT 1
V+
- IN 1
+ IN 1
- IN 2
+ IN 2
OUT 3
OUT 4
GND
+ IN 4
- IN 4
+ IN 3
- IN 3
1
2
3
4
5
6
7
14
13
12
11
10
9
8
14
13
12
11
10
9
8
2
3
4
5
6
7
1
OUT 2
OUT 1
V+
- IN 1
+ IN 1
- IN 2
- IN 2
OUT 3
OUT 4
GND
+ IN 4
- IN 4
+ IN 3
- IN 3
Data Sheet
May 1999
2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Die Characteristics
DIE DIMENSIONS:
3750
m x 2820
m (148 mils x 111 mils)
483
m
25.4
m (19 mils
1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: Silox (SiO
2
)
Thickness: 8.0k
1.0k
Top Metallization:
Type: AlSiCu
Thickness: 16.0k
2k
Substrate:
Radiation Hardened Silicon Gate, Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
49
Metallization Mask Layout
HS-139RH
GND
+IN4
-IN4
V+
-IN1
+IN1
+IN3
-IN3
+IN2
-IN2
OUT4
OUT3
OUT2
OUT1
(9)
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
(14)
(13)
(12)
(11)
(10)
HS-139RH
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